P-129: Study on Electro-Optic Characteristics According to Length between Pixel Electrodes in the Fringe and In-Plane Field Switching Mode

2009 ◽  
Vol 40 (1) ◽  
pp. 1604
Author(s):  
Kyung Su Ha ◽  
Jun Ho Jung ◽  
Ji Woong Park ◽  
Min Su Kim ◽  
Young Jin Lim ◽  
...  
Keyword(s):  
Plane Field ◽  
Electro Optic ◽  
Switching Mode

In‐Plane Field‐Driven Excitonic Electro‐Optic Modulation in Monolayer Semiconductor

2021 ◽  
pp. 2102132
Author(s):  
Daniele Vella ◽  
Marcelo B. Barbosa ◽  
Paolo E. Trevisanutto ◽  
Ivan Verzhbitskiy ◽  
Justin Yong Zhou ◽  
...  
Keyword(s):  
Plane Field ◽  
Electro Optic

Role of the elastic constants of a liquid crystal with positive dielectric anisotropy in the electro-optic characteristics of fringe-field switching mode

2015 ◽  
Vol 42 (9) ◽  
pp. 1221-1228 ◽  
Author(s):  
Heui-Seok Jin ◽  
Dae Hyung Kim ◽  
Jin Hyun Kim ◽  
Han Sol Choi ◽  
Joong Hee Lee ◽  
...  
Keyword(s):  
Liquid Crystal ◽  
Elastic Constants ◽  
Fringe Field ◽  
Dielectric Anisotropy ◽  
Electro Optic ◽  
Switching Mode

The Electro optic Characteristics of Multi-Cell Gap Fringe-Field Switching Mode

2005 ◽  
Vol 44 (2) ◽  
pp. 990-993
Author(s):  
Jun Baek Park ◽  
Hyang Yul Kim ◽  
Kwi Hyun Kim ◽  
Seo Yun Kim ◽  
Young Jin Lim
Keyword(s):  
Fringe Field ◽  
Electro Optic ◽  
Switching Mode

Electro-Optic Characteristics of Single Gap Transflective Display Using In-Plane Switching Mode

2005 ◽  
Vol 433 (1) ◽  
pp. 105-115 ◽  
Author(s):  
Je Hoon Song ◽  
Seung Hee Lee ◽  
Do Sung Kim ◽  
Hoe-Sub Soh ◽  
Woo Yeol Kim
Keyword(s):  
Electro Optic ◽  
Switching Mode

Study on electro optic characteristics of in‐plane switching mode liquid crystal display using transparent electrode

2004 ◽  
Vol 5 (3) ◽  
pp. 18-24 ◽  
Author(s):  
Il Sub Song ◽  
In‐Su Baik ◽  
Tae Man Kim ◽  
Seung Hee Lee ◽  
Do Sung Kim ◽  
...  
Keyword(s):  
Liquid Crystal ◽  
Liquid Crystal Display ◽  
Transparent Electrode ◽  
Electro Optic ◽  
Switching Mode

Electro-Optic Characteristic of Fringe-Field Switching Mode Depending on Rubbing Direction

2000 ◽  
Vol 39 (Part 2, No. 6A) ◽  
pp. L527-L530 ◽  
Author(s):  
Seung Ho Hong ◽  
In Cheol Park ◽  
Hyang Yul Kim ◽  
Seung Hee Lee
Keyword(s):  
Fringe Field ◽  
Electro Optic ◽  
Switching Mode ◽  
Optic Characteristic

Epitaxial ferroelectric thin films

1994 ◽  
Vol 52 ◽  
pp. 572-573
Author(s):  
S. G. Ghonge ◽  
E. Goo ◽  
R. Ramesh ◽  
R. Haakenaasen ◽  
D. K. Fork
Keyword(s):  
Single Crystal ◽  
Work Function ◽  
Nonvolatile Memory ◽  
Ferroelectric Properties ◽  
Electrical Contact ◽  
Memory Devices ◽  
Ferroelectric Films ◽  
Si Substrates ◽  
Electro Optic ◽  
Wide Range

Microstructure of epitaxial ferroelectric/conductive oxide heterostructures on LaAIO3(LAO) and Si substrates have been studied by conventional and high resolution transmission electron microscopy. The epitaxial films have a wide range of potential applications in areas such as non-volatile memory devices, electro-optic devices and pyroelectric detectors. For applications such as electro-optic devices the films must be single crystal and for applications such as nonvolatile memory devices and pyroelectric devices single crystal films will enhance the performance of the devices. The ferroelectric films studied are Pb(Zr0.2Ti0.8)O3(PLZT), PbTiO3(PT), BiTiO3(BT) and Pb0.9La0.1(Zr0.2Ti0.8)0.975O3(PLZT).Electrical contact to ferroelectric films is commonly made with metals such as Pt. Metals generally have a large difference in work function compared to the work function of the ferroelectric oxides. This results in a Schottky barrier at the interface and the interfacial space charge is believed to responsible for domain pinning and degradation in the ferroelectric properties resulting in phenomenon such as fatigue.

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