Efficiency Calculation Analysis of A-Si:H Solar Cells for Determination of Optimum Filament Temperature in Material Deposition

Solar cell efficiency as a function of the energy gap has been simulated by calculating the output current characteristics of the devices based on the distribution of charge carriers, obtained from the solution of the Poisson equation and the Continuity equation. The hydrogenated amorphous silicon (a-Si:H) based solar cell, has simulated in the form of one-dimensional single junction p/i/n. The junction structure of a-SiC:H/a-Si:H/a-Si:H designed have the thickness of 0,015 μm/0,550 μm/0,030 μm, respectively. For simulation, the energy gap has considered constant in the p and n layers, whereas the i layer varies according to the empirical data of energy gap obtained from the deposition parameters of filament temperature. Simulations performed using the finite element method supported by FEMLAB software. Based on simulation results, obtained the highest efficiency of 9.35% corresponds to the lowest energy gap data of 1.706 eV for layer i. This appropriates to the filament temperature of 800oC and subsequently used as the optimum deposition parameters of the material. Keyword: Energy gap, efficiency, FEM, solar cell, hydrogenated amorphous silicon

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Defect Density Profiling in Light-Soaked and Annealed Hydrogenated Amorphous Silicon Solar Cells

MRS Proceedings ◽

10.1557/proc-664-a19.2 ◽

2001 ◽

Vol 664 ◽

Author(s):

Richard S. Crandall ◽

Jeffrey Yang ◽

Subhendu Guha

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Amorphous Silicon ◽

Central Region ◽

Defect Density ◽

Hydrogenated Amorphous Silicon ◽

Silicon Solar Cells ◽

Solar Cell Efficiency ◽

Cell Efficiency ◽

Hydrogenated Amorphous

ABSTRACTThe fundamental ingredient lacking in solar cell modeling is the spatial distribution of defects. To gain this information, we use drive-level capacitance profiling (DLCP) on hydrogenated amorphous silicon solar cells. We find the following: Near the p-i interface the defect density is high, decreasing rapidly into the interior, reaching low values in the central region of the cell, and rising rapidly again at the n-i interface. The states in the central region are neutral dangling-bond defects whose density agrees with those typically found in similar films. However, those near the interfaces with the doped layers are charged dangling bonds in agreement with the predictions of defect thermodynamics. We correlate the changes in solar cell efficiency owing to intense illumination with changes in the defect density throughout the cell. Defects in the central region of the cell increase to values typically found in companion films. We describe the measurements and interpretation of DLCP for solar cells with the aid of a solar cell simulation.

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Optimizations of the Film Deposition Parameters for the Hydrogenated Amorphous Silicon Solar Cell

Japanese Journal of Applied Physics ◽

10.7567/jjaps.20s2.219 ◽

1981 ◽

Vol 20 (S2) ◽

pp. 219 ◽

Cited By ~ 17

Author(s):

Yoshihisa Tawada ◽

Takeshi Yamaguchi ◽

Shuichi Nonomura ◽

Sadayoshi Hotta ◽

Hiroaki Okamoto ◽

...

Keyword(s):

Solar Cell ◽

Amorphous Silicon ◽

Silicon Solar Cell ◽

Hydrogenated Amorphous Silicon ◽

Film Deposition ◽

Amorphous Silicon Solar Cell ◽

Deposition Parameters ◽

Hydrogenated Amorphous

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Hydrogenated Amorphous Silicon-Based Thin Film Solar Cell: Optical, Electrical and Structural Properties

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.1116.59 ◽

2015 ◽

Vol 1116 ◽

pp. 59-64 ◽

Cited By ~ 1

Author(s):

Mohammad Kamal Hossain

Keyword(s):

Thin Film ◽

Solar Cell ◽

Amorphous Silicon ◽

Structural Properties ◽

Architectural Design ◽

Hydrogenated Amorphous Silicon ◽

Cell Efficiency ◽

Materials Used ◽

Silicon Based ◽

Hydrogenated Amorphous

Hydrogenated amorphous silicon (a-Si:H) has been developed as an important materials in thin film-based photovoltaic technologies because of considerable cost reduction as a result of low material consumption and low-temperature process. Among the materials used for thin film solar cells, amorphous silicon is the most important material in the commercial production. Despite of these benefits, the efficiency limit for a single band gap thin film based solar cell predicted by Shockley and Queisser (i.e. ~31%) has become a matter of challenge for current research community. Considering the thermodynamic behavior of a single threshold absorber in generating electricity from solar irradiance, this limit seems inevitable, and thus a tremendous investigation is now being carried out in different dimensions such as hot carrier generation, rainbow solar cell, multiple exciton generation, multiband absorber etc. Nonetheless, so far reported efficiency (ηlab~12%) provide enough room to improve and take challenge to reach to the highest value for a-Si:H based solar cell design. Further to improve architectural design as well as engineer the materials, it is indispensable to understand the optical, electrical and structural properties of aSi:H as an active layer. Here in this article, an attempt was taken into account to focus on such characteristics that affect the overall cell efficiency.

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CdSe/CdS Quantum Dot Core-Shell for Silicon Solar Cell Efficiency Enhancement

Nano Hybrids and Composites ◽

10.4028/www.scientific.net/nhc.29.8 ◽

2020 ◽

Vol 29 ◽

pp. 8-14

Author(s):

Manal Midhat Abdullah ◽

Omar Adnan Ibrahim

Keyword(s):

Solar Cell ◽

Silicon Solar Cell ◽

Energy Gap ◽

Spectral Response ◽

Solar Spectrum ◽

Core Shell ◽

Solar Cell Efficiency ◽

Cell Efficiency ◽

Electron Hole Pair ◽

Pair Generation

Core-shell nanocrystals are utilized to improve vitality conversion efficiency of Si based solar cells. In the present work, a study of synthesis and characterization of photo luminescent, down-shifting, core-shell CdSe/CdS quantum dots is introduced. The QD,s absorb in the UV range (350nm) of the solar spectrum and emit photons with wavelengths centered at (574 nm). Calculated energy gap is (2.16 eV), which is well suited for Silicon absorption and electron-hole pair generation. The grain size is ranged between (1.814 and 3.456 nm). Results show that the cell efficiency is improved from (8.81%) (For a reference silicon solar cell) to (10.07%) (For a CdSe/CdS QD deposited directly on the surface of the solar cell). This improvement is referred to the spreading of the absorbed solar radiation over the spectral response of the Si solar cell.

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Numerical Design of Ultrathin Hydrogenated Amorphous Silicon-Based Solar Cell

International Journal of Photoenergy ◽

10.1155/2021/7506837 ◽

2021 ◽

Vol 2021 ◽

pp. 1-13

Author(s):

F. X. Abomo Abega ◽

A. Teyou Ngoupo ◽

J. M. B. Ndjaka

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Amorphous Silicon ◽

Buffer Layer ◽

Defect Density ◽

Hydrogenated Amorphous Silicon ◽

Theoretical Work ◽

Silicon Based ◽

The Impact ◽

Hydrogenated Amorphous

Numerical modelling is used to confirm experimental and theoretical work. The aim of this work is to present how to simulate ultrathin hydrogenated amorphous silicon- (a-Si:H-) based solar cells with a ITO BRL in their architectures. The results obtained in this study come from SCAPS-1D software. In the first step, the comparison between the J-V characteristics of simulation and experiment of the ultrathin a-Si:H-based solar cell is in agreement. Secondly, to explore the impact of certain properties of the solar cell, investigations focus on the study of the influence of the intrinsic layer and the buffer layer/absorber interface on the electrical parameters ( J SC , V OC , FF, and η ). The increase of the intrinsic layer thickness improves performance, while the bulk defect density of the intrinsic layer and the surface defect density of the buffer layer/ i -(a-Si:H) interface, respectively, in the ranges [109 cm-3, 1015 cm-3] and [1010 cm-2, 5 × 10 13 cm-2], do not affect the performance of the ultrathin a-Si:H-based solar cell. Analysis also shows that with approximately 1 μm thickness of the intrinsic layer, the optimum conversion efficiency is 12.71% ( J SC = 18.95 mA · c m − 2 , V OC = 0.973 V , and FF = 68.95 % ). This work presents a contribution to improving the performance of a-Si-based solar cells.

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