Kinetics of recrystalization and thermal ordering of Ni3Ge deeply deformed single crystals

2018 ◽  
pp. 267-271
Author(s):  
Yulia Vladimirovna Soloveva ◽  
◽  
Svetlana Vasilevna Starenchenko ◽  
Vitaliy Prokofevich Pilyugin ◽  
Vladimir Aleksandrovich Starenchenko ◽  
...  
Keyword(s):  
Single Crystals ◽  
Kinetics Of

Study of potential oscillations during reaction of an aluminium single crystal with an aqueous KOH solution

1990 ◽  
Vol 55 (2) ◽  
pp. 345-353 ◽  
Author(s):  
Ivan Halaša ◽  
Milica Miadoková
Keyword(s):  
Aqueous Solutions ◽  
Single Crystal ◽  
Single Crystals ◽  
Periodic Potential ◽  
Optimum Conditions ◽  
Potential Oscillations ◽  
Dilute Aqueous Solutions ◽  
Experimental Findings ◽  
Kinetics Of

The authors investigated periodic potential changes measured on oriented sections of Al single crystals during spontaneous dissolution in dilute aqueous solutions of KOH, with the aim to find optimum conditions for the formation of potential oscillations. It was found that this phenomenon is related with the kinetics of the reaction investigated, whose rate also changed periodically. The mechanism of the oscillations is discussed in view of the experimental findings.

Thermoluminescence kinetics of oxygen-related centers in AlN single crystals

2012 ◽  
Vol 25 ◽  
pp. 59-62 ◽  
Author(s):  
I.A. Weinstein ◽  
A.S. Vokhmintsev ◽  
D.M. Spiridonov
Keyword(s):  
Single Crystals ◽  
Kinetics Of

Etching Kinetics of α-SiC Single Crystals by Molten KOH

1998 ◽  
Vol 264-268 ◽  
pp. 837-840 ◽  
Author(s):  
Masakazu Katsuno ◽  
Noboru Ohtani ◽  
J. Takahashi ◽  
Hirokatsu Yashiro ◽  
M. Kanaya ◽  
...  
Keyword(s):  
Single Crystals ◽  
Kinetics Of

scholarly journals On the Stability of 3C-SiC Single Crystals at High Temperatures

2012 ◽  
Vol 717-720 ◽  
pp. 493-496
Author(s):  
Deborah Dompoint ◽  
Irina G. Galben-Sandulache ◽  
Alexandre Boulle ◽  
Didier Chaussende ◽  
Dominique Eyidi ◽  
...  
Keyword(s):  
Single Crystals ◽  
Volume Fraction ◽  
Diffuse Intensity ◽  
X Ray ◽  
Partial Dislocations ◽  
X Ray Scattering ◽  
Transmission Electron ◽  
The Stability ◽  
Kinetics Of ◽  
Evolution With Time

The 3C-6H polytypic transition in 3C-SiC single crystals is studied by means of diffuse X-ray scattering (DXS) coupled with transmission electron microscopy (TEM). TEM reveals that the partially transformed SiC crystals contain regions of significantly transformed SiC (characterized by a high density of stacking faults) co-existing with regions of pure 3C-SiC. The simulation of the diffuse intensity allows to determine both the volume fraction of transformed material and the transformation level within these regions. It is further shown that the evolution with time and temperature of the transition implies the multiplication and glide of partial dislocations, the kinetics of which are quantified by means of DXS.

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