scholarly journals Synthesis of polymer-derived graphene/silicon nitride-based nanocomposites with tunable dielectric properties

2016 ◽  
Vol 124 (10) ◽  
pp. 981-988 ◽  
Author(s):  
Xifan WANG ◽  
Gabriela MERA ◽  
Koji MORITA ◽  
Emanuel IONESCU
Keyword(s):  
Dielectric Properties ◽  
Silicon Nitride

Study of dielectric properties of resistive thin-film coatings based on silicon nitride compositions

2020 ◽  
Author(s):  
Andrey V. Starodubov ◽  
Alexey A. Serdobintsev ◽  
Ilya O. Kozhevnikov ◽  
Anton M. Pavlov ◽  
Viktor V. Galushka ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Properties ◽  
Silicon Nitride ◽  
Film Coatings ◽  
Thin Film Coatings

Mechanical and dielectric properties of silicon nitride ceramics with high and hierarchical porosity

2012 ◽  
Vol 40 ◽  
pp. 562-566 ◽  
Author(s):  
Fei Chen ◽  
Feng Cao ◽  
Haoliang Pan ◽  
Kaiyu Wang ◽  
Qiang Shen ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Silicon Nitride ◽  
Hierarchical Porosity ◽  
Nitride Ceramics

Microscopic modeling of the dielectric properties of silicon nitride

2011 ◽  
Vol 84 (4) ◽  
Author(s):  
T. Anh Pham ◽  
Tianshu Li ◽  
Sadasivan Shankar ◽  
Francois Gygi ◽  
Giulia Galli
Keyword(s):  
Dielectric Properties ◽  
Silicon Nitride ◽  
Microscopic Modeling

High purity alpha silicon nitride nanowires - synthesis and dielectric properties

2005 ◽  
Vol 202 (10) ◽  
pp. 1919-1924 ◽  
Author(s):  
T. Xie ◽  
Y. C. Wu ◽  
W. P. Cai ◽  
L. D. Zhang
Keyword(s):  
Dielectric Properties ◽  
Silicon Nitride ◽  
High Purity

Mechanical and dielectric properties of functionalized boron nitride nanosheets/silicon nitride composites

2021 ◽  
Vol 47 (2) ◽  
pp. 2058-2067
Author(s):  
Guandong Liang ◽  
Guoxun Sun ◽  
Jianqiang Bi ◽  
Weili Wang ◽  
Xiangning Yang ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Silicon Nitride ◽  
Boron Nitride ◽  
Boron Nitride Nanosheets

Dielectric Properties of Ultra Dense (3 g/cm3) Silicon Nitride Deposited by Hot Wire CVD at Industrially Relevant High Deposition Rates

2007 ◽  
Vol 989 ◽  
Author(s):  
Zomer Silvester Houweling ◽  
Vasco Verlaan ◽  
Karine van der Werf ◽  
Hanno D. Goldbach ◽  
Ruud E I Schropp
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Silicon Nitride ◽  
Charge Density ◽  
Deposition Rate ◽  
Thin Film Transistors ◽  
Etch Rate ◽  
Mass Density ◽  
Hot Wire

AbstractFor silicon nitride (SiNx) deposited at 3 nm/s using hot wire chemical vapor deposition (HWCVD), the mass-density reached an ultra high value of 3.0 g/cm3. Etch rates in a 16BHF solution show that the lowest etch rate occurs for films with a N/Si ratio of 1.2, the ratio where also the maximum in mass density occurs. The thus found etch rate of 7 nm/min is much better than that for PECVD layers, even when made at a much lower deposition rate. The root-mean-square (rms) roughness measured on 300 nm thick SiN1.2 layers is only about 1 nm, which is advantageous for obtaining high field-effect mobility in thin-film transistors. SiN1.2 films have succesfully been tested in “all hot wire” thin film transistors (TFTs). SiNx films with various x values in the range 1.0 < × <1.5 have been incorporated in metal-insulator-semiconductor structures with n-type c-Si wafers to determine their electrical properties from C-V and I-V measurements. We analyzed the behavior of the static dielectric constant, fixed nitride charges and trapped nitride charges as function of N/Si ratio. I-V measurements show that the HW SiNx films with N/Si ≥ 1.33 have high dielectric breakdown fields that exceed 5.9 MV/cm. For these films we deduce a low positive fixed nitride charge density of 6.2-7.8 × 1016 cm-3 from the flat band voltage and from the small hysteresis in the backward sweep we deduce a low fast trapped charge density of 1.3-1.7 × 1011 cm-2. The dielectric constant ε for different compositions is seen not to change appreciably over the whole range and amounts to 6.3 ± 0.1. These high-density SiNx films possess very low tensile stress (down to 16 MPa), which will be helpful in for instance, plastic electronics applications. HWCVD provides high quality a-SiNx materials with good dielectric properties at a high deposition rate.

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