Mechanical and dielectric properties of silicon nitride ceramics with high and hierarchical porosity

2012 ◽  
Vol 40 ◽  
pp. 562-566 ◽  
Author(s):  
Fei Chen ◽  
Feng Cao ◽  
Haoliang Pan ◽  
Kaiyu Wang ◽  
Qiang Shen ◽  
...  

2006 ◽  
Vol 16 ◽  
pp. s487-s489 ◽  
Author(s):  
Jun-qi LI ◽  
Fa LUO ◽  
Dong-mei ZHU ◽  
Wan-cheng ZHOU


2016 ◽  
Vol 2 (1) ◽  
pp. 13-18
Author(s):  
Imran Khan ◽  
M S A Khan

In the present work we have studied the electrical conductivity, dielectric constant and dielectric loss of Sintered Silicon Nitride ceramics. In this study it was found that the grain size has great impact on electrical conductivity and dielectric properties of Sintered Silicon Nitride Ceramics. The result shows more efficiency of electrical and dielectric properties with nano sized grains.  The sintering was performed in a programmable furnace at 950 K. The dc conductivity measured in the temperature range 300 K to 900 K. At higher temperature (T > 800 K), the dc conductivity increases exponentially with temperature for both of the investigated samples. Dielectric constant and loss are measured in the temperature range 300 K to 900 K with frequency range 1 KHz to 1 MHz. To confirm the grain size, the samples are characterized by the Scanning Electron Microscope (SEM). These types of samples can be used as a high temperature semi-conducting materials.



2017 ◽  
Vol 43 (11) ◽  
pp. 8284-8288 ◽  
Author(s):  
O.A. Lukianova ◽  
V.V. Sirota


2011 ◽  
Vol 194-196 ◽  
pp. 2225-2228
Author(s):  
Jie Xu ◽  
Jun Bo Wang ◽  
Wei Hua Cui ◽  
Xiao Lei Su ◽  
Wan Cheng Zhou

Porous reaction-bonded silicon nitride ceramics with different values of α/β ratio were obtained by setting the nitriding temperature and time. The influence of α/β phase transformation on the dielectric properties of porous silicon nitride ceramics has been investigated. The results show that the α/β transformation occurs when the nitriding temperature is higher than 1400°C . The values of α/β ratio decrease with increase of nitriding temperature and time. The dielectric constant ε′ and the dielectric loss tan δ of the samples increase because of the α/β transformation, and the change of the dielectric loss is more obvious. The increase of concentrations of point defects due to the α/β transformation leads to the significant increase of the dielectric loss.



2008 ◽  
Vol 148 (1-3) ◽  
pp. 257-260 ◽  
Author(s):  
Hiroyuki Miyazaki ◽  
Yu-Ichi Yoshizawa ◽  
Kiyoshi Hirao




2012 ◽  
Vol 38 (7) ◽  
pp. 6021-6026 ◽  
Author(s):  
Rubing Zhang ◽  
Daining Fang ◽  
Xiangmeng Chen ◽  
Yongmao Pei




Sign in / Sign up

Export Citation Format

Share Document