Performance Evaluation of Epitaxial Layer Based Gate Modulated TFET (GM-TFET)

Abstract This paper reports the performance of an epitaxial layer (ETL) based gate modulated (GM-TFET) through 3D Technology Computer Aided Design (TCAD) simulations. The architecture utilizes effects of both vertical tunneling and lateral tunneling phenomena to improve the device performance. Attributes of the ETL, its thickness (tepi) and doping concentration (Nepi) are varied and their impact on device electrical parameters such as transfer characteristic, output performance, subthreshold swing (SS), and threshold voltage (VT) is highlighted. It is observed that both tepi and Nepi significantly influence the different electrical parameters of the ETL based TFET architecture.

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Straight waveguide to coaxial adapter of microwave and extremely high frequencies ranges

ITM Web of Conferences ◽

10.1051/itmconf/20193006007 ◽

2019 ◽

Vol 30 ◽

pp. 06007

Author(s):

Stanislav Kozlov ◽

Sergei Pavlov ◽

Evgenij Horoshilov

Keyword(s):

Computer Aided Design ◽

Design System ◽

Electrical Parameters ◽

Microwave Band ◽

High Frequencies ◽

Electromagnetic Modelling ◽

Computer Aided ◽

Aided Design ◽

Straight Waveguide

The paper presents the results of electromagnetic modelling in the computer-aided design system and electrical parameters measurements of microwave band waveguide-to-coaxial adapters. Adapters are developed, manufactured and tested at Micran.

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Technology Computer-Aided Design-Based Simulation Program with Integrated Circuit Emphasis Model for Back-Channel-Etched Thin-Film Transistors with Floating Metal Components

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2020.18857 ◽

2020 ◽

Vol 20 (11) ◽

pp. 7181-7186

Author(s):

Kihwan Kim ◽

Myungeon Kim ◽

Hyunguk Cho ◽

Youngmi Cho ◽

Yongjo Kim ◽

...

Keyword(s):

Thin Film ◽

Integrated Circuit ◽

Thin Film Transistors ◽

Computer Aided Design ◽

Simulation Program ◽

Computer Aided ◽

Aided Design ◽

Long Channel ◽

Active Channel ◽

Tcad Simulations

We report thin-film transistors (TFTs) with floating metal using a back-channel-etched (BCE) process. Since the BCE process reduces the active mask step compared to other processes, it has attracted attention as a back-plane process that could be used for mass production. To realize the long channel in the BCE process, a floating metal is required; this acts as a bridge in the middle of the channel. We used TCAD (Technology computer-aided design) simulations (Atlas 3D) to predict the characteristics of a-Si TFTs with various active layer thicknesses and numbers of floating metal components; simulation results were compared with real measurements. We explain why TFTs do not scale ideally when floating metals are used; this is related to the resistance and thickness of the active channel. If a thick and highly resistive active channel is used, a larger number of floating metals will require greater correction for ideal scaling. Additionally, considering the capacitance between the source metal and channel, the channel influence under the floating metal should be about 89%. We also suggest a new SPICE (Simulation Program with Integrated Circuit Emphasis) model for TFTs with floating metal based on TCAD simulations.

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