Modulation of the Conductive Filament Growth During the Electroforming Process in Metal Oxide-Based RRAM

2021 ◽  
Author(s):  
Kena Zhang ◽  
Yao Ren
Keyword(s):  
Metal Oxide ◽  
Conductive Filament ◽  
Electroforming Process

Experimental and Theoretical Investigation of Minimization of Forming-Induced Variability in Resistive Memory Devices

2015 ◽  
Vol 1729 ◽  
pp. 53-58
Author(s):  
Brian L. Geist ◽  
Dmitri Strukov ◽  
Vladimir Kochergin
Keyword(s):  
Metal Oxide ◽  
Diffusion Processes ◽  
Memory Device ◽  
Device Fabrication ◽  
Oxide Material ◽  
Memory Devices ◽  
Resistive Memory ◽  
Conductive Filament ◽  
Metal Metal ◽  
Metal Oxide Layer

ABSTRACTResistive memory materials and devices (often called memristors) are an area of intense research, with metal/metal oxide/metal resistive elements a prominent example of such devices. Electroforming (the formation of a conductive filament in the metal oxide layer) represents one of the often necessary steps of resistive memory device fabrication that results in large and poorly controlled variability in device performance. In this contribution we present a numerical investigation of the electroforming process. In our model, drift and Ficks and Soret diffusion processes are responsible for movement of vacancies in the oxide material. Simulations predict filament formation and qualitatively agreed with a reduction of the forming voltage in structures with a top electrode. The forming and switching results of the study are compared with numerical simulations and show a possible pathway toward more repeatable and controllable resistive memory devices.

Metal oxide resistive memory switching mechanism based on conductive filament properties

2011 ◽  
Vol 110 (12) ◽  
pp. 124518 ◽  
Author(s):  
G. Bersuker ◽  
D. C. Gilmer ◽  
D. Veksler ◽  
P. Kirsch ◽  
L. Vandelli ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Resistive Memory ◽  
Conductive Filament ◽  
Switching Mechanism ◽  
Memory Switching

A nondestructive approach to study resistive switching mechanism in metal oxide based on defect photoluminescence mapping

Nanoscale ◽  
2017 ◽  
Vol 9 (36) ◽  
pp. 13449-13456 ◽  
Author(s):  
Xiaohu Wang ◽  
Bin Gao ◽  
Huaqiang Wu ◽  
Xinyi Li ◽  
Deshun Hong ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Laser Excitation ◽  
Conductive Filament ◽  
Switching Device ◽  
Switching Mechanism ◽  
Resistive Switching Mechanism

Resistive switching device with a transparent top electrode and laser excitation of conductive filament consisting of oxygen vacancies have been reported.

Metal oxide RRAM switching mechanism based on conductive filament microscopic properties

2010 ◽  
Author(s):  
G. Bersuker ◽  
D. C. Gilmer ◽  
D. Veksler ◽  
J. Yum ◽  
H. Park ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Conductive Filament ◽  
Switching Mechanism

scholarly journals Electroforming Process in Metal-Oxide-Polymer Resistive Switching Memories

2012 ◽  
pp. 527-534
Author(s):  
Qian Chen ◽  
Henrique L. Gomes ◽  
Asal Kiazadeh ◽  
Paulo R. F. Rocha ◽  
Dago M. De Leeuw ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Resistive Switching ◽  
Electroforming Process

Existence of Cubic ZrO2 at 300°C on Bulk Zirconium

1969 ◽  
Vol 27 ◽  
pp. 166-167
Author(s):  
R.A. Ploc
Keyword(s):  
Metal Oxide ◽  
Metal Substrate ◽  
Preferred Orientation ◽  
Monoclinic Zirconia ◽  
Epitaxial Relationship

The manner in which ZrO2 forms on zirconium at 300°C in air has been discussed in the first reference. In short, monoclinic zirconia nucleates and grows with a preferred orientation relative to the metal substrate. The mode of growth is not well understood since an epitaxial relationship which gives minimum misfit between the zirconium ions in the metal/oxide combination is not realized. The reason may be associated with a thin cubic or tetragonal layer of ZrO2 between the inner oxygen saturated metal and the outer monoclinic zirconia.

Recent advancement in the electrocatalytic synthesis of ammonia

Nanoscale ◽  
2020 ◽  
Vol 12 (15) ◽  
pp. 8065-8094 ◽  
Author(s):  
Xudong Wen ◽  
Jingqi Guan
Keyword(s):  
Metal Oxide ◽  
Oxide Catalysts ◽  
Single Atom ◽  
Metal Oxide Catalysts ◽  
Metal Free ◽  
Recent Advancement ◽  
Nanocomposite Catalysts

Different kinds of electrocatalysts used in NRR electrocatalysis (including single atom catalysts, metal oxide catalysts, nanocomposite catalysts, and metal free catalysts) are introduced.

Routes of metal oxide formation from metal β-diketonates used as CVD precursors

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-65-Pr8-72 ◽  
Author(s):  
A. E. Turgambaeva ◽  
V. V. Krisyuk ◽  
A. F. Bykov ◽  
I. K. Igumenov
Keyword(s):  
Metal Oxide ◽  
Oxide Formation

A reactive redox system of metal oxide for a two-step thermochemical cycle for converting coal to upgraded chemical fuels of CO/H2

1999 ◽  
Vol 09 (PR3) ◽  
pp. Pr3-343-Pr3-348
Author(s):  
T. Kodama ◽  
T. Shimizu ◽  
A. Aoki ◽  
Y. Kitayama
Keyword(s):  
Metal Oxide ◽  
Redox System ◽  
Thermochemical Cycle
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