Electroforming-Free Bipolar Resistive Switching Memory Based on Magnesium Fluoride

Electroforming-free resistive switching random access memory (RRAM) devices employing magnesium fluoride (MgFx) as the resistive switching layer are reported. The electroforming-free MgFx based RRAM devices exhibit bipolar SET/RESET operational characteristics with an on/off ratio higher than 102 and good data retention of >104 s. The resistive switching mechanism in the Ti/MgFx/Pt devices combines two processes as well as trap-controlled space charge limited conduction (SCLC), which is governed by pre-existing defects of fluoride vacancies in the bulk MgFx layer. In addition, filamentary switching mode at the interface between the MgFx and Ti layers is assisted by O–H group-related defects on the surface of the active layer.

Analytically and empirically consistent characterization of resistive switching mechanism in Ag conducting-bridge random-access memory through pseudo-liquid approach

A new physical analysis of the filament formation in Ag conducting-bridge random-access memory (CBRAM) in consideration of the existence of inter-atomic attractions caused by metal bonding is suggested. The movement...

Review on resistive switching mechanisms of bio-organic thin film for non-volatile memory application

Bio-organic, as one of the sustainable and bioresorbable materials, has been used as an active thin film in producing resistive switching random access memory (RRAM) due to its specialized properties. This type of nonvolatile memory consists of a simple unit structure with the processed and solidified bio-organic-based thin film sandwiched between two electrodes. Its memory characteristics are significantly affected by the resistive-switching mechanism. However, to date, the reported mechanisms are very diverse and scattered, and to our best knowledge, there is no literature that reviewed comprehensively the mechanisms of resistive switching in bio-organic-based thin films. Therefore, the objective of this article is to critically analyze data related to the mechanisms of the bio-organic-based RRAM since it was first reported. Based on the pool of literature, three types of mechanisms are categorized, namely electronic, electrochemical, and thermochemical, and the naming is well justified based on the principle of operation. The determining factors and roles of bio-organic material and the two electrodes in governing the three mechanisms have been analyzed, reviewed, discussed, and compared.

Investigation of the Resistive Switching Mechanisms and Rectification Characteristics of HfO2-Based Resistive Random Access Memory Devices with Different Electrode Materials

To study the substitutability of noble metal electrodes in memristors, the effect of Pt/HfO2/Ti structure on the replacement of noble metal electrode Pt by different electrodes was studied. Compared with the unsubstituted devices, the HfO2-based RRAM devices with TiN and TiOxNy electrodes devices showed good resistive switching performance and resistive switching mechanism under oxygen ion migration. Five devices were prepared, and their resistive switching mechanism under oxygen ion migration was investigated. Moreover, besides the resistive switching phenomenon of these RRAM devices, it was found that significant rectifying characteristics were exhibited in a highresistance state (HRS). This phenomenon can be explained by regulation of the Schottky barrier of the interface between the top electrode and the resistive layer, which can be influenced by the migration of oxygen vacancies.

2D photonic memristor beyond graphene: progress and prospects

Photonic computing and neuromorphic computing are attracting tremendous interests in breaking the memory wall of traditional von Neumann architecture. Photonic memristors equipped with light sensing, data storage, and information processing capabilities are important building blocks of optical neural network. In the recent years, two-dimensional materials (2DMs) have been widely investigated for photonic memristor applications, which offer additional advantages in geometry scaling and distinct applications in terms of wide detectable spectrum range and abundant structural designs. Herein, the recent progress made toward the exploitation of 2DMs beyond graphene for photonic memristors applications are reviewed, as well as their application in photonic synapse and pattern recognition. Different materials and device structures are discussed in terms of their light tuneable memory behavior and underlying resistive switching mechanism. Following the discussion and classification on the device performances and mechanisms, the challenges facing this rapidly progressing research field are discussed, and routes to realize commercially viable 2DMs photonic memristors are proposed.

Мемристоры на основе наноразмерных слоев LiNbO-=SUB=-3-=/SUB=- и композита (Co-=SUB=-40-=/SUB=-Fe-=SUB=-40-=/SUB=-B-=SUB=-20-=/SUB=-)-=SUB=-x-=/SUB=-(LiNbO-=SUB=-3-=/SUB=-)-=SUB=-100-x-=/SUB=-

The memristive properties of layered capacitor structures based on the nanocomposite (Co40Fe40B20)x(LiNbO3)100-x and LiNbO3 with thicknesses of 10 and 40 nm, respectively, have been studied. For the first time, a sharp transition from a single to multi-filament resistive switching mechanism, which occurs when the content of the metal phase in the nanocomposite is increased, is demonstrated and explained on the basis of the previously proposed model.