2010 International Electron Devices Meeting
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9781442474185
Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

SiGe HBT technology with fT/fmax of 300GHz/500GHz and 2.0 ps CML gate delay

2010 ◽  
Author(s):  
B. Heinemann ◽  
R. Barth ◽  
D. Bolze ◽  
J. Drews ◽  
G. G. Fischer ◽  
...  
Keyword(s):  
Gate Delay ◽  
Sige Hbt

Magnetic tunnel junction for nonvolatile CMOS logic

2010 ◽  
Author(s):  
Hideo Ohno ◽  
Tetsuo Endoh ◽  
Takahiro Hanyu ◽  
Naoki Kasai ◽  
Shoji Ikeda
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction

The impact of hole-induced electromigration on the cycling endurance of phase change memory

2010 ◽  
Author(s):  
M.H. Lee ◽  
R. Cheek ◽  
C.F. Chen ◽  
Y. Zhu ◽  
J. Bruley ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
The Impact ◽  
Change Memory

Work-function engineering in gate first technology for multi-VT dual-gate FDSOI CMOS on UTBOX

2010 ◽  
Author(s):  
O. Weber ◽  
F. Andrieu ◽  
J. Mazurier ◽  
M. Casse ◽  
X. Garros ◽  
...  
Keyword(s):  
Work Function ◽  
Dual Gate

Physical origin of pFET threshold voltage modulation by Ge channel ion implantation (GC-I/I)

2010 ◽  
Author(s):  
Yoshinori Tsuchiya ◽  
Nathaniel Berliner ◽  
Ryosuke Iijima ◽  
Frederic Monsieur ◽  
Leo Tai ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Threshold Voltage ◽  
Physical Origin

High-performance monolithically-integrated E/D mode InAlN/AlN/GaN HEMTs for mixed-signal applications

2010 ◽  
Author(s):  
Yong Tang ◽  
Paul Saunier ◽  
Ronghua Wang ◽  
Andrew Ketterson ◽  
Xiang Gao ◽  
...  
Keyword(s):  
High Performance ◽  
Mixed Signal ◽  
Monolithically Integrated ◽  
Gan Hemts
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