scholarly journals EXPERIMENTAL STUDY OF HYDROCARBON FILM DEPOSITION ON METALLIC MIRRORS

2010 ◽  
Vol 33 (4) ◽  
pp. 13-20
Author(s):  
K.Yu. Vukolov ◽  
◽  
T.R. Mukhammedzyanov ◽  
S.N. Zvonkov ◽  
N.Yu. Svechnikov ◽  
...  
Keyword(s):  
Experimental Study ◽  
Film Deposition ◽  
Hydrocarbon Film

Observations of hydrocarbon film deposition in the MAST tokamak

2002 ◽  
Vol 306 (1) ◽  
pp. 73-77 ◽  
Author(s):  
A. Tabasso ◽  
G.F. Counsell ◽  
D. Hole ◽  
J.P. Coad
Keyword(s):  
Film Deposition ◽  
Hydrocarbon Film

Experimental study of the copper thiosulfate system with respect to thin-film deposition

1994 ◽  
Vol 250 (1-2) ◽  
pp. 67-71 ◽  
Author(s):  
I. Grozdanov ◽  
C.K. Barlingay ◽  
S.K. Dey ◽  
M. Ristov ◽  
M. Najdoski
Keyword(s):  
Thin Film ◽  
Experimental Study ◽  
Thin Film Deposition ◽  
Film Deposition

Modeling of hydrocarbon film deposition suppression in tokamak diagnostic ports

2011 ◽  
Vol 47 (4) ◽  
pp. 540-550 ◽  
Author(s):  
A. E. Gorodetskii ◽  
V. L. Bukhovets ◽  
R. Kh. Zalavutdinov ◽  
A. P. Zakharov ◽  
E. E. Mukhin ◽  
...  
Keyword(s):  
Film Deposition ◽  
Hydrocarbon Film

scholarly journals Hydrocarbon film deposition inside cavity samples in remote areas of the JET divertor during the 1999–2001 and 2005–2009 campaigns

2015 ◽  
Vol 463 ◽  
pp. 822-826 ◽  
Author(s):  
S. Krat ◽  
Yu. Gasparyan ◽  
A. Pisarev ◽  
M. Mayer ◽  
U. von Toussaint ◽  
...  
Keyword(s):  
Film Deposition ◽  
Remote Areas ◽  
Hydrocarbon Film

Tokamak and laboratory modeling of hydrocarbon film deposition on metallic mirrors

2009 ◽  
Vol 390-391 ◽  
pp. 1090-1092 ◽  
Author(s):  
K.Yu. Vukolov ◽  
I.I. Arkhipov ◽  
T.R. Mukhammedzyanov ◽  
S.N. Zvonkov
Keyword(s):  
Film Deposition ◽  
Laboratory Modeling ◽  
Hydrocarbon Film

Modelling of Hg(3P1) Photosensitization of SiH4 and Surface Reactions of the SiH3 Radical

1986 ◽  
Vol 75 ◽  
Author(s):  
Jérome Perrin ◽  
Ton Biroekhuizen
Keyword(s):  
Experimental Study ◽  
Gas Phase ◽  
Parallel Plate ◽  
Surface Reaction ◽  
Hydrogenated Amorphous Silicon ◽  
Film Deposition ◽  
Surface Processes ◽  
Precursor State ◽  
Parallel Plate Reactor ◽  
Hydrogenated Amorphous

AbstractWe present an experimental study and modelling of gas phase and surface processes involved in mercury-sensitized decomposition of SiH4, leading to hydrogenated amorphous silicon (a-Si:H) film deposition in a parallel plate reactor. The total surface reaction proabability β and the sticking probability s of SiH3 on a growing a-Si:H film are determined in the 40° – 350°C temperature domain. At 100°C β ≈ 0.1 ± 0.01 whereas s ≈ β/4 which reveals an intense radical recombination on the surface. Both β and s increase as a function of temperature. At 350°C β reaches 0.21±0.01. These results are interpreted by a precursor state model for SiH3 adsorption.

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