Modelling of Hg(3P1) Photosensitization of SiH4 and Surface Reactions of the SiH3 Radical

1986 ◽  
Vol 75 ◽  
Author(s):  
Jérome Perrin ◽  
Ton Biroekhuizen
Keyword(s):  
Experimental Study ◽  
Gas Phase ◽  
Parallel Plate ◽  
Surface Reaction ◽  
Hydrogenated Amorphous Silicon ◽  
Film Deposition ◽  
Surface Processes ◽  
Precursor State ◽  
Parallel Plate Reactor ◽  
Hydrogenated Amorphous

AbstractWe present an experimental study and modelling of gas phase and surface processes involved in mercury-sensitized decomposition of SiH4, leading to hydrogenated amorphous silicon (a-Si:H) film deposition in a parallel plate reactor. The total surface reaction proabability β and the sticking probability s of SiH3 on a growing a-Si:H film are determined in the 40° – 350°C temperature domain. At 100°C β ≈ 0.1 ± 0.01 whereas s ≈ β/4 which reveals an intense radical recombination on the surface. Both β and s increase as a function of temperature. At 350°C β reaches 0.21±0.01. These results are interpreted by a precursor state model for SiH3 adsorption.

Kinetics Of Hydrogen Evolution And Crystallization In Hydrogenated Amorphous Silicon Films Studied By Thermal Analysis And Raman Scattering

1993 ◽  
Vol 321 ◽  
Author(s):  
Nagarajan Sridhar ◽  
D. D. L. Chung ◽  
W. A. Anderson ◽  
W. Y. Yu ◽  
L. P. Fu ◽  
...  
Keyword(s):  
Hydrogen Bonding ◽  
Raman Scattering ◽  
Amorphous Silicon ◽  
Hydrogen Evolution ◽  
Deposition Temperature ◽  
Evolved Gas Analysis ◽  
Silicon Film ◽  
Hydrogenated Amorphous Silicon ◽  
Film Deposition ◽  
Hydrogenated Amorphous

ABSTRACTWe observed the processes of hydrogen evolution and crystallization in hydrogenated Amorphous silicon 0.5–7 μm thick films (deposited by dc glow discharge on Molybdenum) by differential scanning calorimetry (DSC), Raman scattering and thermogravimetric analysis (TGA). Investigation was made as a function of doping, deposition temperature and film thickness. For all the films, an endothermic DSC peak was observed at 694 °C (onset). That this peak was at least partly due to hydrogen evolution was shown by TGA, which showed weight loss beginning at 694 °C, and by evolved gas analysis, which showed hydrogen evolution at 694 °C. This temperature (658–704 °C) increased with increasing heating rate (5–30 °C/min). Doping reduced this temperature from 694 to 625 °C for boron doping and to 675 °C for phosphorous doping. Hydrogen evolution kinetics and FTIR results suggest that the silicon-hydrogen bonding in the intrinsic film was a mixture of SiH and S1H2, and was predominantly SiH in the phosphorous doped films and SiH2 in the boron doped films. Crystallization was independent of silicon-hydrogen bonding in the as-deposited Amorphous silicon film. It was bulk (not interface) induced. No exothermic DSC peak accompanied the crystallization. The film deposition temperature had little effect on the DSC result, but crystallization was enhanced by a higher deposition temperature.

Optimizations of the Film Deposition Parameters for the Hydrogenated Amorphous Silicon Solar Cell

1981 ◽  
Vol 20 (S2) ◽  
pp. 219 ◽  
Author(s):  
Yoshihisa Tawada ◽  
Takeshi Yamaguchi ◽  
Shuichi Nonomura ◽  
Sadayoshi Hotta ◽  
Hiroaki Okamoto ◽  
...  
Keyword(s):  
Solar Cell ◽  
Amorphous Silicon ◽  
Silicon Solar Cell ◽  
Hydrogenated Amorphous Silicon ◽  
Film Deposition ◽  
Amorphous Silicon Solar Cell ◽  
Deposition Parameters ◽  
Hydrogenated Amorphous

Surface Processes during Growth of Hydrogenated Amorphous Silicon

2004 ◽  
Vol 808 ◽  
Author(s):  
Eray S. Aydil ◽  
Sumit Agarwal ◽  
Mayur Valipa ◽  
Saravanapriyan Sriraman ◽  
Dimitrios Maroudas
Keyword(s):  
Amorphous Silicon ◽  
Film Growth ◽  
Silicon Film ◽  
Hydrogenated Amorphous Silicon ◽  
Surface Processes ◽  
Atomistic Simulations ◽  
Elementary Surface ◽  
Hydrogenated Amorphous ◽  
And Diffusion

ABSTRACTHydrogenated amorphous silicon films for photovoltaics and thin film transistors are deposited from silane containing discharges. The radicals generated in the plasma such as SiH3 and H impinge on the surface and lead to silicon film growth through a complex network of elementary surface processes that include adsorption, abstraction, insertion and diffusion of various radicals. Mechanism and kinetics of these reactions determine the film composition and quality. Developing deposition strategies for improving the film quality requires a fundamental understanding of the radical-surface interaction mechanisms. We have been using in situ multiple total internal reflection Fourier transform infrared spectroscopy and in situ spectroscopic ellipsometry in conjunction with atomistic simulations to determine the elementary surface reaction and diffusion mechanisms. Synergistic use of experiments and atomistic simulations elucidate elementary processes occurring on the surface. Herein, we review our current understanding of the reaction mechanisms that lead to a-Si:H film growth with special emphasis on the reactions of the SiH3 radical.

Experimental Study of Sweep-Out in N-Type Hydrogenated Amorphous Silicon

1987 ◽  
Vol 95 ◽  
Author(s):  
G. Winborne ◽  
L. XU ◽  
M. Silver ◽  
H. M. Branz
Keyword(s):  
Experimental Study ◽  
Amorphous Silicon ◽  
Density Of States ◽  
Decay Constant ◽  
Hydrogenated Amorphous Silicon ◽  
Temporal Response ◽  
Mobility Edge ◽  
Subsequent Time ◽  
Silicon Structures ◽  
Hydrogenated Amorphous

AbstractExperimental results on the temporal response of i/n/i hydrogenated amorphous silicon structures are presented as a function of voltage. The current is initially space charge limited followed by a transition to an emission limited current. The data generally exhibits four subsequent time dependence regimes e.g. :(1) an exponential decay, (2) followed by a t−2 decay, (3) then a t−1 decay and (4) lastly a t(α−1) decay where α<1. The current versus time allows one to derive a density of states. The deduced density of states in the arsenic doped n layers displays a peak at shallow energies followed by an exponential with an energy decay constant of approximately 300°K followed by a flat region and finally followed by a slowly rising density of states. The initial Fermi level is estimated to be within the peak located less than 0.3eV from the mobility edge.

Simultaneous boron and hydrogen profiling in gas-phase-doped hydrogenated amorphous silicon

1983 ◽  
Vol 110 (3) ◽  
pp. 251-261 ◽  
Author(s):  
P.M. Read ◽  
C.J. Sofield ◽  
M.C. Franks ◽  
G.B. Scott ◽  
M.J. Thwaites
Keyword(s):  
Amorphous Silicon ◽  
Gas Phase ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous
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