Hydrocarbon film deposition inside cavity samples in remote areas of the JET divertor during the 1999–2001 and 2005–2009 campaigns

Solid state materials in the form of thin films have found increasing structural and electronic applications. Among the multitude of thin film deposition techniques, the radio frequency induced plasma sputtering has gained considerable utilization in recent years through advances in equipment design and process improvement, as well as the discovery of the versatility of the process to control film properties. In our laboratory we have used the scanning electron microscope extensively in the direct and indirect characterization of sputtered films for correlation with their physical and electrical properties.Scanning electron microscopy is a powerful tool for the examination of surfaces of solids and for the failure analysis of structural components and microelectronic devices.

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Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100089652 ◽

1991 ◽

Vol 49 ◽

pp. 1068-1069

Author(s):

M. Grant Norton ◽

C. Barry Carter

Keyword(s):

Thin Film ◽

Thin Films ◽

Laser Ablation ◽

Substrate Surface ◽

Pulsed Laser ◽

Pulsed Laser Ablation ◽

Thin Film Deposition ◽

Film Deposition ◽

Laser Ablation Process ◽

Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

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Characterization of Y-Ba-Cu-O films grown on silicon substrates by sequential evaporation

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100106399 ◽

1988 ◽

Vol 46 ◽

pp. 866-867

Author(s):

E. L. Hall ◽

A. Mogro-Campero ◽

L. G. Turner ◽

N. Lewis

Keyword(s):

Thin Film ◽

Thin Film Deposition ◽

Superconducting Films ◽

Electron Beam Evaporation ◽

Film Deposition ◽

Silicon Substrates ◽

Superconducting Properties ◽

Sequential Electron ◽

Thin Superconducting Films

There is great interest in the growth of thin superconducting films of YBa2Cu3Ox on silicon, since this is a necessary first step in the use of this superconductor in a variety of possible electronic applications including interconnects and hybrid semiconductor/superconductor devices. However, initial experiments in this area showed that drastic interdiffusion of Si into the superconductor occurred during annealing if the Y-Ba-Cu-O was deposited direcdy on Si or SiO2, and this interdiffusion destroyed the superconducting properties. This paper describes the results of the use of a zirconia buffer layer as a diffusion barrier in the growth of thin YBa2Cu3Ox films on Si. A more complete description of the growth and characterization of these films will be published elsewhere.Thin film deposition was carried out by sequential electron beam evaporation in vacuum onto clean or oxidized single crystal Si wafers. The first layer evaporated was 0.4 μm of zirconia.

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Layered and ion implantation specimens as possible reference materials for the electron-probe microanalysis

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100132893 ◽

1992 ◽

Vol 50 (2) ◽

pp. 1652-1653

Author(s):

G. Remond ◽

R.H. Packwood ◽

C. Gilles ◽

S. Chryssoulis

Keyword(s):

Ion Implantation ◽

Reference Materials ◽

Analytical Techniques ◽

Thin Film Deposition ◽

Film Deposition ◽

X Ray ◽

Spatially Resolved ◽

Analytical Expressions ◽

Original Approach ◽

Depth Concentration

Merits and limitations of layered and ion implanted specimens as possible reference materials to calibrate spatially resolved analytical techniques are discussed and illustrated for the case of gold analysis in minerals by means of x-ray spectrometry with the EPMA. To overcome the random heterogeneities of minerals, thin film deposition and ion implantation may offer an original approach to the manufacture of controlled concentration/ distribution reference materials for quantification of trace elements with the same matrix as the unknown.In order to evaluate the accuracy of data obtained by EPMA we have compared measured and calculated x-ray intensities for homogeneous and heterogeneous specimens. Au Lα and Au Mα x-ray intensities were recorded at various electron beam energies, and hence at various sampling depths, for gold coated and gold implanted specimens. X-ray intensity calculations are based on the use of analytical expressions for both the depth ionization Φ (ρz) and the depth concentration C (ρz) distributions respectively.

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