First Principle Study of Oxygen Diffusion on Uranium Nitride UN (001) Surface with Uranium or Nitrogen Vacancies

2015 ◽  
Vol 7 (2) ◽  
pp. 124-130 ◽  
Author(s):  
T. Zergoug ◽  
S. E.H. Abaidia ◽  
A. Nedjar
RSC Advances ◽  
2015 ◽  
Vol 5 (106) ◽  
pp. 87437-87444 ◽  
Author(s):  
Abdul Majid ◽  
Mehreen Javed ◽  
Usman Ali Rana ◽  
Salah Ud-Din Khan

First principle investigations exploring the effects of nitrogen vacancies on ferromagnetism in Ti doped wurtzite GaN are reported.


Author(s):  
R.L. Sabatini ◽  
Yimei Zhu ◽  
Masaki Suenaga ◽  
A.R. Moodenbaugh

Low temperature annealing (<400°C) of YBa2Cu3O7x in a ozone containing oxygen atmosphere is sometimes carried out to oxygenate oxygen deficient thin films. Also, this technique can be used to fully oxygenate thinned TEM specimens when oxygen depletion in thin regions is suspected. However, the effects on the microstructure nor the extent of oxygenation of specimens has not been documented for specimens exposed to an ozone atmosphere. A particular concern is the fact that the ozone gas is so reactive and the oxygen diffusion rate at these temperatures is so slow that it may damage the specimen by an over-reaction. Thus we report here the results of an investigation on the microstructural effects of exposing a thinned YBa2Cu3O7-x specimen in an ozone atmosphere using transmission electron microscopy and energy loss spectroscopy techniques.


2002 ◽  
Vol 716 ◽  
Author(s):  
You-Seok Suh ◽  
Greg Heuss ◽  
Jae-Hoon Lee ◽  
Veena Misra

AbstractIn this work, we report the effects of nitrogen on electrical and structural properties in TaSixNy /SiO2/p-Si MOS capacitors. TaSixNy films with various compositions were deposited by reactive sputtering of TaSi2 or by co-sputtering of Ta and Si targets in argon and nitrogen ambient. TaSixNy films were characterized by Rutherford backscattering spectroscopy and Auger electron spectroscopy. It was found that the workfunction of TaSixNy (Si>Ta) with varying N contents ranges from 4.2 to 4.3 eV. Cross-sectional transmission electron microscopy shows no indication of interfacial reaction or crystallization in TaSixNy on SiO2, resulting in no significant increase of leakage current in the capacitor during annealing. It is believed that nitrogen retards reaction rates and improves the chemical-thermal stability of the gate-dielectric interface and oxygen diffusion barrier properties.


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