scholarly journals Влияние дефектов на поглощение терагерцового излучения в монокристалле CdSiP-=SUB=-2-=/SUB=-

2020 ◽  
Vol 129 (7) ◽  
pp. 998
Author(s):  
В.С. Ноздрин ◽  
С.В. Чучупал ◽  
Г.А. Командин ◽  
В.Н. Курлов ◽  
О.Е. Породинков ◽  
...  
Keyword(s):  
Single Crystal ◽  
Reflection Spectra ◽  
Fourier Spectroscopy ◽  
Temperature Range ◽  
Growth Defects ◽  
Intrinsic Absorption ◽  
Transmission And Reflection Spectra ◽  
Thz Range ◽  
Weakly Dependent ◽  
Transmission And Reflection

Measurements of the transmission and reflection spectra of a CdSiP2 single crystal, performed in the temperature range from 80 to 300 K using pulsed terahertz and infrared Fourier spectroscopy, revealed a significant impact of post-growth defects on absorption in the THz range. It was found that this absorption is weakly dependent on temperature, in contrast to the previously obtained results for another crystal of the chalcopyrite family with s significantly lower concentration of defects. When cooling, the intrinsic absorption mechanisms were minimized and the contribution of defects to absorption was extracted

scholarly journals Pulsed Laser Annealing Effect on Optical and Structural Properties of ZnS/ZnSe Heterostructures

2019 ◽  
Vol 6 (1) ◽  
pp. 23-29
Author(s):  
Haidar Howari
Keyword(s):  
Thin Films ◽  
Absorption Coefficient ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Annealing Process ◽  
Reflection Spectra ◽  
Pulsed Laser Annealing ◽  
Before And After ◽  
Transmission And Reflection Spectra ◽  
Transmission And Reflection

Studies of pulsed laser annealing (PLA) on semiconductor thin films were performed to examine changes of the optical and structural parameters due to the laser heat. Thin films of ZnS/ZnSe were deposited on quartz substrates at a pressure of 8.2*10-6 mbar using PVD technique. These thin films were annealed at different laser powers using CO2 pulsed laser. Transmission and reflection spectra were recorded before and after the annealing process. A decrease in the transmission and reflection spectra after annealing is observed. The absorption coefficient, refractive index, damping coefficient and dielectric constant were calculated before and after the annealing process. Changes in the optical parameters are found after the annealing process. The energy band gaps of ZnS and ZnSe have been determined. Upon annealing, an increase in the absorption coefficient is observed which is due to an improvement in the granular nanostructure of the ZnS/ZnSe thin films. XRD patterns of the prepared samples were obtained before and after the annealing procedure and revealed an enhancement in the crystallite structure upon annealing.

Transmission and Reflection Spectra of Zinc Oxide Implanted with a High Dose of Cobalt Ions

2020 ◽  
Vol 86 (6) ◽  
pp. 1039-1044
Author(s):  
Yu. A. Bumai ◽  
V. F. Valeev ◽  
V. I. Golovchuk ◽  
A. I. Gumarov ◽  
M. G. Lukashevich ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
High Dose ◽  
Reflection Spectra ◽  
Cobalt Ions ◽  
Transmission And Reflection Spectra ◽  
Transmission And Reflection
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