scholarly journals Роль пьезоэффекта в аномальной зависимости проводимости гетероструктуры AlGaAs/GaAs с двумерным электронным газом от расстояния между контактами

2020 ◽  
Vol 46 (2) ◽  
pp. 22
Author(s):  
В.Е. Сизов ◽  
М.В. Степушкин
Keyword(s):  
Low Temperatures ◽  
Piezoelectric Effect ◽  
Electron Gas ◽  
Experimental Studies ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Resistance Increase ◽  
Channel Conductivity ◽  
Dimensional Electron Gas

The results of experimental studies of the conductivity of AlGaAs/GaAs heterostructure with two-dimensional electron gas at temperatures of 10-300 K are presented. At low temperatures, with a decrease in the distance between the contacts to the structure from 100 to 20 µm, a resistance increase was observed. To explain this anomalous dependence, a numerical simulation of the piezoelectric effect in a semiconductor on the channel conductivity is carried out. It is shown that it is necessary to take into account the crystallographic orientation of the channel and the effect on its potential of remote piezo-charges.

Electron Tunneling Between Si Quantum Dots and Two Dimensional Electron Gas under Optical Excitation at Low Temperatures

2019 ◽  
Vol 28 (1) ◽  
pp. 369-374
Author(s):  
Yoko Sakurai ◽  
Yukihiro Takada ◽  
Juin-Ichi Iwata ◽  
Kenji Shiraishi ◽  
Shintaro Nomura ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Low Temperatures ◽  
Electron Tunneling ◽  
Electron Gas ◽  
Optical Excitation ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Dimensional Electron Gas ◽  
Si Quantum Dots

Effect of the Inter-Subband Scattering in Modulation-Doped AlxGa1-xN/GaN Heterostructures

2001 ◽  
Vol 693 ◽  
Author(s):  
Z. W. Zheng ◽  
B. Shen ◽  
C. P. Jiang ◽  
S. L. Guo ◽  
J. Liu ◽  
...  
Keyword(s):  
Elastic Scattering ◽  
Low Temperatures ◽  
Strain Relaxation ◽  
Electron Gas ◽  
High Magnetic Fields ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Dimensional Electron Gas ◽  
Increasing Temperature

AbstractMagnetotransport properties of Al0.22Ga0.78N/GaN modulation-doped heterostructures have been studied at low temperatures and high magnetic fields. The inter-subband scattering of the two-dimensional electron gas was observed. The inter-subband scattering is very weak and depends weakly on temperature when temperature is between 1.3 K and 10 K and becomes stronger with increasing temperature when temperature is higher than 10 K. The strain relaxation of the Al0.22Ga0.78N layer influences the inter-subband scattering. It is suggested that the inter-subband scattering is dominant by the elastic scattering when temperature is lower than 10 K, and changes to be dominant by the inelastic scattering of the acoustic phonons when temperature is higher than 10 K.

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