scholarly journals Modern Research and Development of High Pressure Science and Technology. 1. High-Pressure Studies of Reactions in Solution. Solvent Viscosity Effects.

1993 ◽  
Vol 42 (472) ◽  
pp. 103-109
Author(s):  
Kimihiko HARA
Keyword(s):  
High Pressure ◽  
Research And Development ◽  
Science And Technology ◽  
Solvent Viscosity ◽  
Viscosity Effects ◽  
High Pressure Studies

High-pressure studies of solvent viscosity effects on large-amplitude isomerization rates

1993 ◽  
Vol 11 (1-3) ◽  
pp. 55-64 ◽  
Author(s):  
Kimihiko Harat ◽  
Seiji Akimoto
Keyword(s):  
High Pressure ◽  
Large Amplitude ◽  
Solvent Viscosity ◽  
Viscosity Effects ◽  
High Pressure Studies

High pressure studies of viscosity effects on isomerization

1991 ◽  
Vol 7 (1-6) ◽  
pp. 136-138
Author(s):  
Kimihiko Hara ◽  
Seiji Akimito
Keyword(s):  
High Pressure ◽  
Viscosity Effects ◽  
High Pressure Studies

Driving Taiwanese science and technology research

Impact ◽  
2020 ◽  
Vol 2020 (6) ◽  
pp. 4-5
Author(s):  
Dar-Bin Shieh
Keyword(s):  
Research And Development ◽  
Science And Technology ◽  
Technology Research ◽  
Technological Research ◽  
Deputy Minister

Professor Dar-Bin Shieh, Deputy Minister at the Taiwan Ministry of Science and Technology, shares with us details of the efforts undertaken at the Ministry to promote and support scientific and technological research and development in Taiwan, including his response to the COVID-19 pandemic

High Pressure Studies of Quantum Well Emission and Deep Emission in GaInP(ordered)-GaAs Heterostructures

1997 ◽  
Vol 499 ◽  
Author(s):  
S. H. Kwok ◽  
P. Y. Yu ◽  
K. Uchida ◽  
T. Arai
Keyword(s):  
High Pressure ◽  
Quantum Well ◽  
Emission Band ◽  
Excitation Power ◽  
High Excitation ◽  
High Pressure Studies ◽  
Band Alignments ◽  
High Pressure Study

ABSTRACTWe report on a high pressure study of emission from a series of GaInP(ordered)/GaAs heterostructures. A so-called “deep emission” band at 1.46 eV is observed in all our samples. At high excitation power, quantum well emission emerges in only one structure where thin GaP layers are inserted on both sides of the GaAs well. From the pressure dependent emission in this sample we have determined its band alignments. The role of the GaP layers in suppressing the deep emission is elucidated.

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