scholarly journals Application of Dislocation Dynamics Simulation to the STI Semiconductor Structure

2004 ◽  
Vol 53 (12) ◽  
pp. 1378-1383
Author(s):  
Satoshi IZUMI ◽  
Takao MIYAKE ◽  
Shinsuke SAKAI ◽  
Hiroyuki OHTA
2011 ◽  
Vol 702-703 ◽  
pp. 838-841
Author(s):  
Santosh Kumar Sahoo ◽  
V. D. Hiwarkar ◽  
Prita Pant ◽  
Indradev Samajdar ◽  
Karri V. Mani Krishna ◽  
...  

The present study deals with deformation behaviour of textured Zircaloy 2 with two dominant orientations: basal and non-basal. During initial stages (20%), two distinct class of grains were observed – non-deforming/non-fragmenting grains and deforming/fragmenting grains. The so-called non- deforming/non-fragmenting grains remain equiaxed even after 50% of deformation. They also have insignificant in-grain misorientation developments and have more residual stresses. Dislocation dynamics simulation showed that the dislocation interactions/mobility is insignificant in basal orientations at room temperature deformations.


2008 ◽  
Vol 2008.21 (0) ◽  
pp. 658-659
Author(s):  
Masaomi YAMADA ◽  
Tadashi HASEBE ◽  
Takashi ONIZAWA ◽  
Yoshihiro TOMITA

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