32.3 percent efficient triple junction GaInP2/GaAs/Ge concentrator solar cells

In this study, a mechanical stacking technique has been used to bond together the GaInP/GaAs and poly-silicon (Si) solar wafers. A GaInP/GaAs/poly-Si triple-junction solar cell has mechanically stacked using a low-temperature bonding process which involves micro metal In balls on a metal line using a high-optical-transmission spin-coated glue material. Current–voltage measurements of the GaInP/GaAs/poly-Si triple-junction solar cells have carried out at room temperature both in the dark and under 1 sun with 100 mW/cm2 power density using a solar simulator. The GaInP/GaAs/poly-Si triple-junction solar cell has reached an efficiency of 24.5% with an open-circuit voltage of 2.68 V, a short-circuit current density of 12.39 mA/cm2, and a fill-factor of 73.8%. This study demonstrates a great potential for the low-temperature micro-metal-ball mechanical stacking technique to achieve high conversion efficiency for solar cells with three or more junctions.

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Solution-Processed Monolithic All-Perovskite Triple-Junction Solar Cells with Efficiency Exceeding 20%

ACS Energy Letters ◽

10.1021/acsenergylett.0c01184 ◽

2020 ◽

Vol 5 (9) ◽

pp. 2819-2826 ◽

Cited By ~ 5

Author(s):

Ke Xiao ◽

Jin Wen ◽

Qiaolei Han ◽

Renxing Lin ◽

Yuan Gao ◽

...

Keyword(s):

Solar Cells ◽

Triple Junction ◽

Solution Processed

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Equivalent circuit models for triple-junction concentrator solar cells

Solar Energy Materials and Solar Cells ◽

10.1016/j.solmat.2011.10.013 ◽

2012 ◽

Vol 98 ◽

pp. 57-65 ◽

Cited By ~ 69

Author(s):

Gideon Segev ◽

Gur Mittelman ◽

Abraham Kribus

Keyword(s):

Solar Cells ◽

Equivalent Circuit ◽

Triple Junction ◽

Equivalent Circuit Models

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POSS Polyimide Sealed Flexible Triple‐Junction GaAs Thin‐Film Solar Cells for Space Applications

Advanced Materials Technologies ◽

10.1002/admt.202100603 ◽

2021 ◽

pp. 2100603

Author(s):

Min Qian ◽

Xiaojun Mao ◽

Min Wu ◽

Zhangyi Cao ◽

Qing Liu ◽

...

Keyword(s):

Thin Film ◽

Solar Cells ◽

Triple Junction ◽

Thin Film Solar Cells ◽

Space Applications

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Light‐trapping and spectral modulation to increase the conversion efficiency of triple‐junction GaAs solar cells using antireflective coating comprising a periodic array of cone‐shaped TiO 2 structures

International Journal of Energy Research ◽

10.1002/er.7240 ◽

2021 ◽

Author(s):

Wen‐Jeng Ho ◽

Jheng‐Jie Liu ◽

Xing‐Yu Chen ◽

Hung‐Pin Xiao

Keyword(s):

Solar Cells ◽

Conversion Efficiency ◽

Triple Junction ◽

Light Trapping ◽

Periodic Array ◽

Antireflective Coating ◽

Spectral Modulation

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Carrier Dynamics and Defects in Bulk 1eV InGaAsNSb Materials and InGaAs Layers with MBL Grown by MOVPE for Multi-junction Solar Cells

MRS Proceedings ◽

10.1557/opl.2012.1705 ◽

2013 ◽

Vol 1493 ◽

pp. 245-251 ◽

Cited By ~ 2

Author(s):

Yongkun Sin ◽

Stephen LaLumondiere ◽

Brendan Foran ◽

William Lotshaw ◽

Steven C. Moss ◽

...

Keyword(s):

Solar Cells ◽

Buffer Layer ◽

Triple Junction ◽

Gaas Substrate ◽

High Performance ◽

Carrier Dynamics ◽

Dilute Nitride ◽

Metamorphic Buffer ◽

Lattice Matched

ABSTRACTMulti-junction III-V solar cells are based on a triple-junction design that employs a 1eV bottom junction grown on the GaAs substrate with a GaAs middle junction and a lattice-matched InGaP top junction. There are two possible approaches implementing the triple-junction design. The first approach is to utilize lattice-matched dilute nitride materials such as InGaAsN(Sb) and the second approach is to utilize lattice-mismatched InGaAs employing a metamorphic buffer layer (MBL). Both approaches have a potential to achieve high performance triple-junction solar cells. A record efficiency of 43.5% was achieved from multi-junction solar cells using the first approach [1] and the solar cells using the second approach yielded an efficiency of 41.1% [2]. We studied carrier dynamics and defects in bulk 1eV InGaAsNSb materials and InGaAs layers with MBL grown by MOVPE for multi-junction solar cells.

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