Analysis of the Silicon Carbide Boundary Layer under Passive and Active Oxidation

2019 ◽  
Author(s):  
Samuel Chen ◽  
Iain D. Boyd
Keyword(s):  
Boundary Layer ◽  
Silicon Carbide ◽  
Active Oxidation

Surface temperature jump beyond active oxidation of carbon/silicon carbide composites in extreme aerothermal conditions

Carbon ◽  
2014 ◽  
Vol 71 ◽  
pp. 102-119 ◽  
Author(s):  
Francesco Panerai ◽  
Bernd Helber ◽  
Olivier Chazot ◽  
Marianne Balat-Pichelin
Keyword(s):  
Silicon Carbide ◽  
Surface Temperature ◽  
Temperature Jump ◽  
Active Oxidation

Selective active oxidation in hafnium boride-silicon carbide composites above 2000 °C

2016 ◽  
Vol 36 (15) ◽  
pp. 3697-3707 ◽  
Author(s):  
David L. Poerschke ◽  
Mark D. Novak ◽  
Najeb Abdul-Jabbar ◽  
Stephan Krämer ◽  
Carlos G. Levi
Keyword(s):  
Silicon Carbide ◽  
Active Oxidation

scholarly journals Active oxidation of silicon carbide

2012 ◽  
Vol 29 (3) ◽  
pp. 193-198 ◽  
Author(s):  
Nathan S. Jacobson ◽  
Dwight L. Myers ◽  
Bryan J. Harder
Keyword(s):  
Silicon Carbide ◽  
Active Oxidation

High-Temperature Active Oxidation of Chemically Vapor-Deposited Silicon Carbide in COCO2 Atmosphere

1993 ◽  
Vol 76 (10) ◽  
pp. 2521-2524 ◽  
Author(s):  
Takayuki Narushima ◽  
Takashi Goto ◽  
Yoshio Yokoyama ◽  
Yasutaka Iguchi ◽  
Toshio Hirai
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Active Oxidation ◽  
Chemically Vapor Deposited

Si Emission into the Oxide Layer during Oxidation of Silicon Carbide

2014 ◽  
Vol 778-780 ◽  
pp. 553-556 ◽  
Author(s):  
Yasuto Hijikata ◽  
Yurie Akasaka ◽  
Shuhei Yagi ◽  
Hiroyuki Yaguchi
Keyword(s):  
Silicon Carbide ◽  
Oxide Layer ◽  
The Other ◽  
Oxide Surface ◽  
Emission Model ◽  
Low Oxygen ◽  
Active Oxidation ◽  
Oxidation Condition ◽  
Tof Sims ◽  
Low Oxygen Pressure

To verify the Si emission phenomenon during oxidation of SiC, the behavior of Si atoms was investigated using HfO2/SiC structures. At low oxygen pressure, i.e. the oxidation condition predominant to active oxidation, Si emission into oxide layer and the growth of SiO2 on the oxide surface were clearly observed by TOF-SIMS. On the other hand, the growth of SiO2 on the surface was suppressed under an ordinary pressure. These results evidence the Si emission during oxidation that is proposed in the Si and C emission model.

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