Surface temperature jump beyond active oxidation of carbon/silicon carbide composites in extreme aerothermal conditions

Carbon ◽  
2014 ◽  
Vol 71 ◽  
pp. 102-119 ◽  
Author(s):  
Francesco Panerai ◽  
Bernd Helber ◽  
Olivier Chazot ◽  
Marianne Balat-Pichelin
Keyword(s):  
Silicon Carbide ◽  
Surface Temperature ◽  
Temperature Jump ◽  
Active Oxidation

Selective active oxidation in hafnium boride-silicon carbide composites above 2000 °C

2016 ◽  
Vol 36 (15) ◽  
pp. 3697-3707 ◽  
Author(s):  
David L. Poerschke ◽  
Mark D. Novak ◽  
Najeb Abdul-Jabbar ◽  
Stephan Krämer ◽  
Carlos G. Levi
Keyword(s):  
Silicon Carbide ◽  
Active Oxidation

Modeling of the Transition From Active to Passive Oxidation of Si(100)

2000 ◽  
Vol 619 ◽  
Author(s):  
Da-Jiang Liu ◽  
Cheol Ho Choi ◽  
Mark S. Gordon ◽  
J.W. Evans
Keyword(s):  
Oxide Film ◽  
Quantum Chemistry ◽  
Surface Temperature ◽  
Ab Initio ◽  
Lattice Gas ◽  
Cooperative Behavior ◽  
Active Oxidation ◽  
Island Formation ◽  
Passive Oxidation ◽  
Lattice Gas Models

ABSTRACTFor a Si(100)2×1 surface exposed to oxygen, there is a transition from etching (“active” oxidation via removal of SiO) to “passive” oxidation (buildup of an oxide film) with decreasing surface temperature. The transition depends sensitively on a competition between SiO desorption, and oxide island formation. We analyze these processes utilizing both ab-initio quantum chemistry studies of key energetics and lattice-gas models for the cooperative behavior.

scholarly journals Active oxidation of silicon carbide

2012 ◽  
Vol 29 (3) ◽  
pp. 193-198 ◽  
Author(s):  
Nathan S. Jacobson ◽  
Dwight L. Myers ◽  
Bryan J. Harder
Keyword(s):  
Silicon Carbide ◽  
Active Oxidation

Wettability of Silicon Carbide Particles by the Aluminium Melts in Producing Al-SiC Composites

2015 ◽  
Vol 1128 ◽  
pp. 149-155 ◽  
Author(s):  
Muna Noori ◽  
Mihai Chisamera ◽  
Hazim Faleh ◽  
Florin Ştefănescu ◽  
Gigel Neagu
Keyword(s):  
Silicon Carbide ◽  
Thin Layer ◽  
Surface Temperature ◽  
Active Elements ◽  
The Matrix ◽  
Surface Active ◽  
Sic Composites ◽  
Silicon Carbide Particles ◽  
Carbide Particles ◽  
Existing Data

The paper is a synthesis of essential data regarding the wetting conditions in aluminium – silicon carbide mixtures. Non wetting conditions between the reinforcing element and the matrix turns difficult the incorporation of particles in the aluminium melt. The wettability depends on several elements, like the presence of the oxide layer at the melt surface, temperature, pressure or shape of the complementary material. To improve wetting conditions, several measures are necessary: alloying of the melt with surface active elements, overheating of the melt; coating of the particles with a metallic thin layer. Also, by using existing data reported in the field, some parameters were calculated and interpreted.

High-Temperature Active Oxidation of Chemically Vapor-Deposited Silicon Carbide in COCO2 Atmosphere

1993 ◽  
Vol 76 (10) ◽  
pp. 2521-2524 ◽  
Author(s):  
Takayuki Narushima ◽  
Takashi Goto ◽  
Yoshio Yokoyama ◽  
Yasutaka Iguchi ◽  
Toshio Hirai
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Active Oxidation ◽  
Chemically Vapor Deposited
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