COMPLEX IMPEDANCE-TRANSFORMATION OUT-OF-PHASE POWER DIVIDER WITH HIGH POWER-HANDLING CAPABILITY

2015 ◽  
Vol 53 ◽  
pp. 13-19 ◽  
Author(s):  
Lulu Bei ◽  
Shen Zhang ◽  
Kai Huang
Keyword(s):  
High Power ◽  
Complex Impedance ◽  
Power Divider ◽  
Power Handling ◽  
Power Handling Capability

Wideband Gysel HMSIW power divider with high power-handling capability

2018 ◽  
Vol 10 (3) ◽  
pp. 308-312
Author(s):  
Kaijun Song ◽  
Te Kong ◽  
Yu Zhu ◽  
Hongxing Xu ◽  
Lifei Jiang ◽  
...  
Keyword(s):  
High Power ◽  
Reasonable Agreement ◽  
Impedance Matching ◽  
Power Divider ◽  
Mode Analysis ◽  
Analysis Method ◽  
Input Output ◽  
Output Impedance ◽  
Power Handling ◽  
Power Handling Capability

AbstractA novel Gysel power divider with high power-handling capability based on half-mode substrate integrated waveguide (HMSIW) has been presented in this paper. A HMSIW ring is used and good input/output impedance matching is achieved based on HMSIW-microstrip taper transition. Two microstrip stubs are introduced in HMSIW ring to assemble two isolation resistors to improve the isolation between the output ports. The even- and odd-mode analysis method is used for the presented circuit. A prototype of the presented power divider is designed, fabricated, and measured. The measured results show a reasonable agreement with the simulated ones.

Novel Dual-Band Out-of-Phase Power Divider With High Power-Handling Capability

2012 ◽  
Vol 60 (8) ◽  
pp. 2403-2409 ◽  
Author(s):  
Gao-Le Dai ◽  
Xing-Chang Wei ◽  
Er-Ping Li ◽  
Ming-Yao Xia
Keyword(s):  
High Power ◽  
Power Divider ◽  
Dual Band ◽  
Power Handling ◽  
Power Handling Capability

A power divider with high-power handling capability and enhanced selectivity performance

2018 ◽  
Vol 60 (8) ◽  
pp. 1993-1997 ◽  
Author(s):  
Fu-Xing Liu ◽  
Wang Yang ◽  
Xiao-Yu Zhang ◽  
Jong-Chul Lee
Keyword(s):  
High Power ◽  
Power Divider ◽  
Power Handling ◽  
Power Handling Capability ◽  
Enhanced Selectivity

Compact, Harmonic Suppressed Gysel Power Divider with Plain Structure

Frequenz ◽  
2017 ◽  
Vol 71 (5-6) ◽  
Author(s):  
Saeed Roshani ◽  
Payam Siahkamari ◽  
Hesam Siahkamari
Keyword(s):  
High Power ◽  
Stop Band ◽  
Size Reduction ◽  
Power Divider ◽  
Power Handling ◽  
Low Pass ◽  
Power Handling Capability ◽  
Comprehensive Comparison ◽  
Wilkinson Power Divider ◽  
Low Pass Filters

AbstractA novel compact Gysel power divider with up to 12th, harmonics suppression was proposed in this study. Incorporation of six similar low-pass filters into the conventional Gysel power divider is applied to this design. The proposed power divider reduces the occupied area to only 9 % of the conventional Gysel power divider at 625 MHz (91 % size reduction). A comprehensive comparison between the proposed design and other published studies substantiates the superiority of the proposed design in terms of circuit size and stop-band bandwidth. Furthermore, this design retains the high-power handling capability over the Wilkinson power divider.

Dual-Band Out-of-Phase Power Divider with Impedance Transformation and High Power-Handling Capability

2016 ◽  
Vol 36 (5) ◽  
pp. 317-327 ◽  
Author(s):  
Weiwei Zhang ◽  
Yangyang Guan ◽  
Yongle Wu ◽  
Weimin Wang ◽  
Ming Su ◽  
...  
Keyword(s):  
High Power ◽  
Power Divider ◽  
Dual Band ◽  
Power Handling ◽  
Power Handling Capability

Gradient honeycomb absorber with high power handling capability

2021 ◽  
Vol 127 (2) ◽  
Author(s):  
L. Liu ◽  
Y. Zhang ◽  
J. Q. Sheng ◽  
Y. M. Wei ◽  
R. M. Liu ◽  
...  
Keyword(s):  
High Power ◽  
Power Handling ◽  
Power Handling Capability

HTS narrowband stripline filter at 2.1 GHz with high power handling capability

2006 ◽  
Vol 49 (2) ◽  
pp. 254-257 ◽  
Author(s):  
Xubo Guo ◽  
Xiaoping Zhang ◽  
Bisong Cao ◽  
Bin Wei ◽  
Lijuan Mu ◽  
...  
Keyword(s):  
High Power ◽  
Power Handling ◽  
Power Handling Capability

An Optically Gated InP Based Thyristor for High Power Pulsed Switching Applications

1991 ◽  
Vol 240 ◽  
Author(s):  
J. H. Zhao ◽  
R. Lis ◽  
D. Coblentz ◽  
J. Illan ◽  
S. McAfee ◽  
...  
Keyword(s):  
High Power ◽  
High Concentration ◽  
Photoconductive Switch ◽  
Turn On ◽  
Power Handling ◽  
Switched Current ◽  
Power Handling Capability ◽  
Pn Junctions ◽  
Switching Characteristics ◽  
Switch Voltage

ABSTRACTAn MOCVD grown InP based optothyristor has been fabricated and tested for high power pulsed switching applications. To increase the power handling capability, the thyristor structure has a 250 μm thick Fe doped semi-insulating (SI) InP sandwiched between two pn junctions of a conventional thyristor. The turn-on of the thyristor is controlled by optical illumination on the SI-InP which creates a high concentration of electron and hole pairs. More than 1,100 V device hold-off voltage has been observed and over 66 A switched current has been realized with a di/dt rating of 1.38×1010 A/s. The switched current as a function of switch voltage and of optical illumination power has also been studied. Comparison with the switching characteristics of a bulk SI-InP photoconductive switch clearly indicates the advantage of this optothyristor in terms of power handling capability.

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