scholarly journals Red Carbon: a Carbon-Oxygen-based covalent semiconductor for selective amine sensing

Author(s):  
Paolo Giusto ◽  
Daniel Cruz ◽  
Yael Rodriguez ◽  
Regina Rothe ◽  
Nadezda Tarakina

The requirements for organic semiconductor materials and new methods for their synthesis at low temperature have risen over the last decades, especially due to concerns of sustainability. Herein, we present an innovative method for the synthesis of a so-called “red carbon” thin film, being composed of carbon and oxygen, only. This material was already described by Kappe and Ziegler at the beginning of the 20th century, but now can complement the current research on covalent organic semiconductor materials. The herein described red carbon can be homogeneous deposited on glass substrates as thin ilms which reveal a highly ordered structure. The films are highly reactive towards amines and were employed as amine vapor sensors for a scope of analogous amines. The gas-to-solid phase reaction causes a significant change of the films optical properties in all cases, blue-shifting the bandgap and the photoluminescence spectra from the red to the near UV range. The irreversible chemical reaction between the thin film and the vapor was also exploited for the preparation of nitrogen containing thin carbon films. We expect the herein presented red carbon material is of interest not only for sensing applications, but also in optoelectronics.

1986 ◽  
Vol 35 (7) ◽  
pp. 965
Author(s):  
ZHANG JING ◽  
LIU AN-SHENG ◽  
WU ZI-QIN ◽  
GUO KE-XIN

2015 ◽  
Vol 60 (12) ◽  
pp. 3776-3791 ◽  
Author(s):  
José C. S. Costa ◽  
Rui M. Rocha ◽  
Inês C. M. Vaz ◽  
Manuel C. Torres ◽  
Adélio Mendes ◽  
...  

1999 ◽  
Vol 74 (12) ◽  
pp. 1672-1674 ◽  
Author(s):  
G. L. Molnár ◽  
G. Petö ◽  
Z. Vértesy ◽  
E. Zsoldos

RSC Advances ◽  
2014 ◽  
Vol 4 (72) ◽  
pp. 38450-38454 ◽  
Author(s):  
Golap Kalita ◽  
Takatoshi Sugiura ◽  
Yuji Wakamatsu ◽  
Ryo Hirano ◽  
Masaki Tanemura

Controllable direct graphene growth process on an insulating substrate (SiO2/Si and sapphire) by the solid phase reaction of polymer (polyvinyl alcohol) thin film.


2007 ◽  
Vol 46 (3B) ◽  
pp. 1333-1336 ◽  
Author(s):  
Nack-Bong Choi ◽  
Dae-Won Kim ◽  
Hyun-Sik Seo ◽  
Chang-Dong Kim ◽  
Hochul Kang ◽  
...  

1997 ◽  
Vol 36 (Part 2, No. 12B) ◽  
pp. L1637-L1640 ◽  
Author(s):  
Zhonghe Jin ◽  
Gururaj A. Bhat ◽  
Milton Yeung ◽  
Hoi S. Kwok ◽  
Man Wong

1995 ◽  
Vol 402 ◽  
Author(s):  
G Y. Molnár ◽  
G. Pető ◽  
E. Zsoldos ◽  
Z. E. Horváth ◽  
N. Q. Khánh

AbstractThe solid phase reaction of Fe thin films with (111) Si substrate was investigated at constant annealing temperature and time (700°C, 7 minutes) as a function of the initial iron film thickness (from 5 nm to 27.5 um in 2.5 nm steps). The formed phases were analysed by X-ray diffraction, Rutherford backscattering and transmission electron microscopy and optical microscopy.After annealing FeSi phase was detected in the thinner samples. Samples with Fe layers thicker than 12.5 nm contained a β-FeSi2 phase. This special phase sequence was explained with the help of a nucleation controlled phase formation model, taking into consideration the critical radius of nuclei of the new phase. The advantages of using the film thickness as a variable during investigation of solid phase thin film reactions and the probable substrate effects are also discussed.


2004 ◽  
Vol 464-465 ◽  
pp. 107-111 ◽  
Author(s):  
J. Labis ◽  
H. Namatame ◽  
M. Taniguchi ◽  
C. Kamezawa ◽  
M. Hirai ◽  
...  

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