Why Do Perovskite Solar Cells that Have a Reduced Open-Circuit Voltage due to Surface Recombination Not Show Hysteresis?

2018 ◽  
Author(s):  
Uli Würfel ◽  
Moritz Unmüssig
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Perovskite Solar Cells ◽  
Surface Recombination ◽  
Open Circuit

scholarly journals Reducing Surface Recombination by a Poly(4-vinylpyridine) Interlayer in Perovskite Solar Cells with High Open-Circuit Voltage and Efficiency

ACS Omega ◽  
2018 ◽  
Vol 3 (5) ◽  
pp. 5038-5043 ◽  
Author(s):  
Mozhgan Yavari ◽  
Mohammad Mazloum-Ardakani ◽  
Somayeh Gholipour ◽  
Mohammad Mahdi Tavakoli ◽  
Nima Taghavinia ◽  
...  
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Perovskite Solar Cells ◽  
Surface Recombination ◽  
Open Circuit

Reducing recombination and enhancing open circuit voltage by Strontium-alloying in multiple cation perovskite solar cells

2017 ◽  
Author(s):  
Pietro Caprioglio ◽  
Fengshuo Zu ◽  
Christian M. Wolff ◽  
Martin Stolterfhot ◽  
Norbert Koch ◽  
...  
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Perovskite Solar Cells ◽  
Open Circuit

scholarly journals Numerical Simulation Analysis of Ag Crystallite Effects on Interface of Front Metal and Silicon in the PERC Solar Cell

Energies ◽  
2021 ◽  
Vol 14 (3) ◽  
pp. 592
Author(s):  
Myeong Sang Jeong ◽  
Yonghwan Lee ◽  
Ka-Hyun Kim ◽  
Sungjin Choi ◽  
Min Gu Kang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Surface Recombination ◽  
Open Circuit ◽  
Surface Recombination Velocity ◽  
Metal Interface ◽  
Ag Crystallites ◽  
Recombination Velocity

In the fabrication of crystalline silicon solar cells, the contact properties between the front metal electrode and silicon are one of the most important parameters for achieving high-efficiency, as it is an integral element in the formation of solar cell electrodes. This entails an increase in the surface recombination velocity and a drop in the open-circuit voltage of the solar cell; hence, controlling the recombination velocity at the metal-silicon interface becomes a critical factor in the process. In this study, the distribution of Ag crystallites formed on the silicon-metal interface, the surface recombination velocity in the silicon-metal interface and the resulting changes in the performance of the Passivated Emitter and Rear Contact (PERC) solar cells were analyzed by controlling the firing temperature. The Ag crystallite distribution gradually increased corresponding to a firing temperature increase from 850 ∘C to 950 ∘C. The surface recombination velocity at the silicon-metal interface increased from 353 to 599 cm/s and the open-circuit voltage of the PERC solar cell decreased from 659.7 to 647 mV. Technology Computer-Aided Design (TCAD) simulation was used for detailed analysis on the effect of the surface recombination velocity at the silicon-metal interface on the PERC solar cell performance. Simulations showed that the increase in the distribution of Ag crystallites and surface recombination velocity at the silicon-metal interface played an important role in the decrease of open-circuit voltage of the PERC solar cell at temperatures of 850–900 ∘C, whereas the damage caused by the emitter over fire was determined as the main cause of the voltage drop at 950 ∘C. These results are expected to serve as a steppingstone for further research on improvement in the silicon-metal interface properties of silicon-based solar cells and investigation on high-efficiency solar cells.

scholarly journals Spray‐coated lead‐free Cs 2 AgBiBr 6 double perovskite solar cells with high open‐circuit voltage

Solar RRL ◽  
2021 ◽  
Author(s):  
Nathan Daem ◽  
Jennifer Dewalque ◽  
Felix Lang ◽  
Anthony Maho ◽  
Gilles Spronck ◽  
...  
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Perovskite Solar Cells ◽  
Double Perovskite ◽  
Open Circuit ◽  
Lead Free

scholarly journals On the Relation between the Open‐Circuit Voltage and Quasi‐Fermi Level Splitting in Efficient Perovskite Solar Cells

2019 ◽  
Vol 9 (33) ◽  
pp. 1901631 ◽  
Author(s):  
Pietro Caprioglio ◽  
Martin Stolterfoht ◽  
Christian M. Wolff ◽  
Thomas Unold ◽  
Bernd Rech ◽  
...  
Keyword(s):  
Solar Cells ◽  
Fermi Level ◽  
Open Circuit Voltage ◽  
Perovskite Solar Cells ◽  
Open Circuit ◽  
Quasi Fermi Level ◽  
Level Splitting

scholarly journals Use of Sodium Diethyldithiocarbamate to Enhance the Open‐Circuit Voltage of CH 3 NH 3 PbI 3 Perovskite Solar Cells

Solar RRL ◽  
2021 ◽  
pp. 2000811
Author(s):  
Miriam Más-Montoya ◽  
David Curiel ◽  
Junke Wang ◽  
Bardo J. Bruijnaers ◽  
René A. J. Janssen
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Perovskite Solar Cells ◽  
Open Circuit ◽  
Sodium Diethyldithiocarbamate

scholarly journals Efficient wide-bandgap perovskite solar cells enabled by doping a bromine-rich molecule

Nanophotonics ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Rui He ◽  
Tingting Chen ◽  
Zhipeng Xuan ◽  
Tianzhen Guo ◽  
Jincheng Luo ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Performance ◽  
Open Circuit Voltage ◽  
Perovskite Solar Cells ◽  
Wide Bandgap ◽  
Open Circuit ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Tandem Solar Cells ◽  
Carrier Lifetimes

Abstract Wide-bandgap (wide-E g , ∼1.7 eV or higher) perovskite solar cells (PSCs) have attracted extensive attention due to the great potential of fabricating high-performance perovskite-based tandem solar cells via combining with low-bandgap absorbers, which is considered promising to exceed the Shockley–Queisser efficiency limit. However, inverted wide-E g PSCs with a minimized open-circuit voltage (V oc) loss, which are more suitable to prepare all-perovskite tandem devices, are still lacking study. Here, we report a strategy of adding 1,3,5-tris (bromomethyl) benzene (TBB) into wide-E g perovskite absorber to passivate the perovskite film, leading to an enhanced average V oc. Incorporation of TBB prolongs carrier lifetimes in wide-E g perovskite due to reduction of defects in perovskites and makes a better energy level matching between perovskite absorber and electron transport layer. As a result, we achieve the power conversion efficiency of 17.12% for our inverted TBB-doped PSC with an enhanced V oc of 1.19 V, compared with that (16.14%) for the control one (1.14 V).

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