scholarly journals Efficient wide-bandgap perovskite solar cells enabled by doping a bromine-rich molecule

Nanophotonics ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Rui He ◽  
Tingting Chen ◽  
Zhipeng Xuan ◽  
Tianzhen Guo ◽  
Jincheng Luo ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Performance ◽  
Open Circuit Voltage ◽  
Perovskite Solar Cells ◽  
Wide Bandgap ◽  
Open Circuit ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Tandem Solar Cells ◽  
Carrier Lifetimes

Abstract Wide-bandgap (wide-E g , ∼1.7 eV or higher) perovskite solar cells (PSCs) have attracted extensive attention due to the great potential of fabricating high-performance perovskite-based tandem solar cells via combining with low-bandgap absorbers, which is considered promising to exceed the Shockley–Queisser efficiency limit. However, inverted wide-E g PSCs with a minimized open-circuit voltage (V oc) loss, which are more suitable to prepare all-perovskite tandem devices, are still lacking study. Here, we report a strategy of adding 1,3,5-tris (bromomethyl) benzene (TBB) into wide-E g perovskite absorber to passivate the perovskite film, leading to an enhanced average V oc. Incorporation of TBB prolongs carrier lifetimes in wide-E g perovskite due to reduction of defects in perovskites and makes a better energy level matching between perovskite absorber and electron transport layer. As a result, we achieve the power conversion efficiency of 17.12% for our inverted TBB-doped PSC with an enhanced V oc of 1.19 V, compared with that (16.14%) for the control one (1.14 V).

Reveal the large open-circuit voltage deficit of all-inorganic CsPbIBr2 perovskite solar cells

2021 ◽  
Author(s):  
Ying Hu ◽  
Jiaping Wang ◽  
Peng Zhao ◽  
Zhenhua Lin ◽  
Siyu Zhang ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Perovskite Solar Cells ◽  
Open Circuit ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Perovskite Layer ◽  
Excellent Thermal Stability ◽  
Voltage Loss

Abstract Due to excellent thermal stability and optoelectronic properties, all-inorganic perovskite is one of the promising candidates to solve the thermal decomposition problem of conventional organic-inorganic hybrid perovskite solar cells (PSCs), but the larger voltage loss (V loss) cannot be ignored, especially CsPbIBr2, which limits the improvement of efficiency. To reduce the V loss, one promising solution is the modification of the energy level alignment between perovskite layer and adjacent charge transport layer (CTL), which can facilitate charge extraction and reduce carrier recombination rate at perovskite/CTL interface. Therefore, the key issues of minimum V loss and high efficiency of CsPbIBr2-based PSCs were studied in terms of the perovskite layer thickness, the effects of band offset of CTL/perovskite layer, the doping concentration of the CTL, and the electrode work function in this study based on device simulations. The open-circuit voltage (V oc) is increased from 1.37 V to 1.52 V by replacing SnO2 with ZnO as electron transport layer (ETL) due to more matching conduction band with CsPbIBr2 layer.

scholarly journals Room-Temperature-Processed Amorphous Sn-In-O Electron Transport Layer for Perovskite Solar Cells

Materials ◽  
2019 ◽  
Vol 13 (1) ◽  
pp. 32 ◽  
Author(s):  
Seungtae Baek ◽  
Jeong Woo Han ◽  
Devthade Vidyasagar ◽  
Hanbyeol Cho ◽  
Hwi-Heon HA ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Electron Transport ◽  
Room Temperature ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Perovskite Solar Cells ◽  
Open Circuit ◽  
Transport Layer ◽  
Electron Transport Layer

We report amorphous tin-indium-oxide (TIO, Sn fraction: >50 atomic percentage (at%)) thin films as a new electron transport layer (ETL) of perovskite solar cells (PSCs). TIO thin films with Sn fraction of 52, 77, 83, 92, and 100 at% were grown on crystalline indium-tin-oxide (ITO, Sn fraction: ~10 at%) thin films, a common transparent conducting oxide, by co-sputtering In2O3 and SnO2 at room temperature. The energy band structures of the amorphous TIO thin films were determined from the optical absorbance and the ultraviolet photoelectron spectra. All the examined compositions are characterized by a conduction band edge lying between that of ITO and that of perovskite (here, methylammonium lead triiodide), indicating that TIO is a potentially viable ETL of PSCs. The photovoltaic characteristics of the TIO-based PSCs were evaluated. Owing mainly to the highest fill factor and open circuit voltage, the optimal power conversion efficiency was obtained for the 77 at%-Sn TIO ETL with TiCl4 treatment. The fill factor and the open circuit voltage changes with varying the Sn fraction, despite similar conduction band edges. We attribute these differences to the considerable changes in the electrical resistivity of the TIO ETL. This would have a significant effect on the shunt and/or the series resistances. The TIO ETL can be continuously grown on an ITO TCO in a chamber, as ITO and TIO are composed of identical elements, which would help to reduce production time and costs.

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