Integrated silicon p-i-n structures with highly doped p ++, n ++ regions for modulation in terahertz frequency band

2010 ◽  
Vol 53 (6) ◽  
pp. 309-316
Author(s):  
V. V. Grimalsky ◽  
S. V. Koshevaya ◽  
M. Tecpoyotl-T
2008 ◽  
Vol 67 (13) ◽  
pp. 1207-1215 ◽  
Author(s):  
V. K. Kiselyov ◽  
M. S. Yanovsky ◽  
V. I. Bezborodov ◽  
Ye. M. Kuleshov

2007 ◽  
Vol 50 (4) ◽  
pp. 524-529 ◽  
Author(s):  
V. V. Gerasimov ◽  
B. A. Knyazev ◽  
P. D. Rudych ◽  
V. S. Cherkassky

2018 ◽  
Vol 51 (46) ◽  
pp. 464002 ◽  
Author(s):  
A V Sidorov ◽  
S V Golubev ◽  
S V Razin ◽  
A P Veselov ◽  
A V Vodopyanov ◽  
...  

2003 ◽  
Vol 93 (5) ◽  
pp. 3034-3038 ◽  
Author(s):  
A. Suz̆iedelis ◽  
J. Gradauskas ◽  
S. As̆montas ◽  
G. Valus̆is ◽  
H. G. Roskos

2010 ◽  
Vol 5 (4) ◽  
pp. 140-146
Author(s):  
Vyacheslav V. Popov

Physics of plasma oscillations and basic principles of plasmonic detection of terahertz radiation in FET structures with two-dimensional electron channels are discussed. Plasmonic devices are practically attractive because they are extremely fast and electrically tunable through the entire terahertz frequency band by changing electric potentials at metal contacts of the device


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