plasma oscillations
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2021 ◽  
Author(s):  
Alex Latyshev ◽  
Andrew G Semenov ◽  
Andrei D Zaikin

We investigate plasma oscillations in long electromagnetically coupled superconducting nanowires. We demonstrate that in the presence of inter-wire coupling plasma modes in each of the wires get split into two "new" modes propagating with different velocities across the system. These plasma modes form an effective dissipative quantum environment interacting with electrons inside both wires and causing a number of significant implications for low temperature behavior of the systems under consideration.


2021 ◽  
Vol 28 (9) ◽  
pp. 093509
Author(s):  
Christine M. Greve ◽  
Manoranjan Majji ◽  
Kentaro Hara

2021 ◽  
pp. 70-73
Author(s):  
D.S. Bondar ◽  
V.I. Maslov ◽  
I.N. Onishchenko ◽  
R.T. Ovsiannikov

Focusing of both electron and positron bunches in electron-positron collider is necessary. When long electron/positron bunch is injected into the plasma, the focusing force is not uniform but oscillated. It is shown that a long positron bunch after focusing is destroyed faster than an electron bunch due to betatron and plasma oscillations.


Author(s):  
Б.Е. Умирзаков ◽  
С.Б. Донаев ◽  
Р.М. Ёркулов ◽  
Р.Х. Ашуров ◽  
В.М. Ротштейн

In this work, the composition, morphology, and electronic structure of SiO2 nanofilms of various thicknesses, created by thermal oxidation on the Si(111) surface, have been studied. It is shown that up to a thickness of 30–40 Å, the film has an island character. At d ≥ 60 Å, a homogeneous continuously film of SiO2 is formed and the stoichiometric surface roughness of which does not exceed 1.5 - 2 nm. Regardless of the film thickness of the SiO2 appreciable interdiffusion of atoms at the interface SiO2-Si not observed. The regularities of the change in the composition, the degree of surface coverage, and the energy of plasma oscillations with a change in the thickness of the SiO2/Si(111) films in the range from 20 to 120 Å have been determined.


2021 ◽  
Vol 12 (1) ◽  
pp. 204-207
Author(s):  
A. V. Ushakov ◽  
I. V. Karpov ◽  
A. A. Shaikhadinov ◽  
L. Yu. Fedorov ◽  
E. A. Goncharova ◽  
...  

2021 ◽  
Vol 129 (5) ◽  
pp. 619
Author(s):  
Н.П. Степанов ◽  
А.А. Калашников

The regularities of the temperature behavior of the reflection spectra of the Bi0.8Sb1.2Te3 crystal obtained in the range of the plasma resonance of free charge carriers and the fundamental absorption edge allow us to trace the changes in the plasmon energy Ep and the optical band gap Eg opt. The observed decrease in Eg opt with increasing temperature corresponds to the existing ideas about the redistribution of holes between the nonequivalent extremes of the valence band in (Bi2-xSbx)Te3 (0<x<1) crystals. The dominance of this process in a certain temperature range contributes to the change in plasma frequencies. Keywords: reflection spectra, plasma oscillations, electron-plasmon interaction, dielectric functions.


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