Relationship between Dielectric Relaxation and the Electronic States at the Grain Boundaries of a Ceramic Ferroelectric Semiconductor

2020 ◽  
Vol 84 (11) ◽  
pp. 1411-1414
Author(s):  
G. S. Grigoryan ◽  
A. M. Solodukha
Keyword(s):  
Dielectric Relaxation ◽  
Grain Boundaries ◽  
Electronic States ◽  
Ceramic Ferroelectric

Quantum-Chemical Simulation of Silicon Grain Boundaries Contaminated by Oxygen and Carbon

2005 ◽  
Vol 108-109 ◽  
pp. 235-240
Author(s):  
Anis M. Saad ◽  
Alex L. Pushkarchuk ◽  
A.V. Mazanik ◽  
A.K. Fedotov ◽  
S.A. Kuten
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Conduction Band ◽  
Atomic Structure ◽  
Quantum Chemical ◽  
Electronic States ◽  
Quantum Chemical Simulation ◽  
The Core ◽  
Chemical Simulation

Transformation of the “core” atomic structure and electronic states of the tilt Σ5 θ = 37° [001]/(130) grain boundary in poly-Si due to incorporation of carbon atoms into the oxygencontaining complexes is studied using MM and MO LCAO methods. Different numbers n = 1 ÷ 4 of C-atoms were introduced into the 5-fold interstitial positions in the initial O-containing complexes built-up from SiO3 and SiO4 configurations at the GB “core”. Incorporation of C-atoms into SiO3 and SiO4 complexes leads to the formation of Si-O-C-Si chains and shifting of the donorlike levels generated by SiO3 and SiO4 configurations to the bottom of the conduction band with an increase in the number of the incorporated C-atoms.

Density-functional tight-binding calculations of electronic states associated with grain boundaries in GaN

2005 ◽  
Vol 71 (12) ◽  
Author(s):  
A. Béré ◽  
P. Ruterana ◽  
G. Nouet ◽  
A. T. Blumenau ◽  
S. Sanna ◽  
...  
Keyword(s):  
Grain Boundaries ◽  
Density Functional ◽  
Tight Binding ◽  
Electronic States

The origin of giant dielectric relaxation and electrical responses of grains and grain boundaries of W-doped CaCu3Ti4O12 ceramics

2012 ◽  
Vol 112 (11) ◽  
pp. 114115 ◽  
Author(s):  
Prasit Thongbai ◽  
Jutapol Jumpatam ◽  
Bundit Putasaeng ◽  
Teerapon Yamwong ◽  
Santi Maensiri
Keyword(s):  
Dielectric Relaxation ◽  
Grain Boundaries ◽  
Giant Dielectric ◽  
Electrical Responses

scholarly journals Electronic states of disordered grain boundaries in graphene prepared by chemical vapor deposition

Carbon ◽  
2013 ◽  
Vol 64 ◽  
pp. 178-186 ◽  
Author(s):  
Péter Nemes-Incze ◽  
Péter Vancsó ◽  
Zoltán Osváth ◽  
Géza I. Márk ◽  
Xiaozhan Jin ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Grain Boundaries ◽  
Vapor Deposition ◽  
Electronic States ◽  
Chemical Vapor

Effect of MnO on the Electrical Properties of Nb-Doped SrTiO3 Varistor

1998 ◽  
Vol 547 ◽  
Author(s):  
S.-H. Kim ◽  
H.-W. Seon ◽  
Yoonho Kim
Keyword(s):  
Electrical Properties ◽  
Grain Boundaries ◽  
Electronic States ◽  
Potential Barrier Height ◽  
Plane Analysis ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Electrode Method ◽  
Single Grain ◽  
Mn Doped

AbstractThe effect of MnO on the electrical properties of Nb-doped SrTiO3 was investigated to understand the electronic states of grains and grain boundaries. Grain size and dielectric constant were decreased with increasing Mn-doped content from 0 to 0.07 mol%. However, it was observed that the non-linearity coefficient of Nb-doped SrTiO3 was changed from 5 to 43 with Mn-doped content increasing from 0 to 0.03 mol%. Current-voltage (I-V) characteristics, capacitance-voltage (C-V) measurement, complex plane analysis and impedance spectroscopy were performed to obtain the information about the electrical properties of grains and grain boundaries. The potential barrier height increased and the donor concentration decreased with increasing Mn-doped content. This phenomena, that the electrical properties of Nb-doped SrTiO3 were changed with the addition of Mn, would be determined by the effect which Mn-2-3 substituted for Ti sites. It was observed that the breakdown voltage of single grain boundary was changed from 3.8 V to 8.9 V when measured by micro-electrode method.

Electronic States at Low-Angle Grain Boundaries in Polycrystalline Naphthalene

2013 ◽  
Vol 117 (30) ◽  
pp. 15741-15748 ◽  
Author(s):  
Marko Mladenović ◽  
Nenad Vukmirović ◽  
Igor Stanković
Keyword(s):  
Grain Boundaries ◽  
Electronic States
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