scholarly journals A 0.35μm Low-Noise Stable Charge Sensitive Amplifier for Silicon Detectors Applications

2020 ◽  
Keyword(s):  
Low Noise ◽  
Charge Sensitive Amplifier ◽  
Silicon Detectors

Low-noise oxide passivated p+n silicon detectors

1972 ◽  
Vol 101 (1) ◽  
pp. 43-46 ◽  
Author(s):  
G. Keil ◽  
E. Lindner
Keyword(s):  
Low Noise ◽  
Silicon Detectors

A multichannel charge-sensitive amplifier for reading out the signals of double-sided silicon detectors of the tracking system for the CBM project

2010 ◽  
Vol 53 (4) ◽  
pp. 520-523 ◽  
Author(s):  
E. V. Atkin ◽  
Yu. A. Volkov ◽  
A. G. Voronin ◽  
I. I. Il’yushchenko ◽  
A. S. Silaev ◽  
...  
Keyword(s):  
Tracking System ◽  
Charge Sensitive Amplifier ◽  
Silicon Detectors

High-Voltage Operation of Surface Barrier Silicon Detectors With a Side Groove

1982 ◽  
Vol 16 ◽  
Author(s):  
S. Ohkawa ◽  
K. Husimi ◽  
C. Kim ◽  
Y. Kim ◽  
D. Itoh
Keyword(s):  
Bias Voltage ◽  
Side Surface ◽  
Low Noise ◽  
Excess Noise ◽  
Surface Barrier ◽  
Carrier Injection ◽  
Silicon Detectors ◽  
Abrupt Decrease ◽  
Output Noise ◽  
Barrier Detector

ABSTRACTA remarkable characteristic of the surface barrier detector with a side groove cooled down to the nitrogen temperature has been observed. That is an abrupt decrease of the output noise at a definite voltage in increasing the bias voltage slowly. This is caused by a carrier injection from the side surface of the groove near the neck narrowed by the side groove. This excess noise disappears after the depletion layer goes through the neck of the side groove. This is confirmed by the fact that the capacitance of the detector decreases abruptly with the decrease of the noise at the same bias voltage. This detector is capable to be operated at a voltage higher than this voltage with a low noise. The maximum bias voltage applied to the detector is 3000 V.

Analysis of low noise, bipolar transistor head amplifiers for high energy applications of silicon detectors

1982 ◽  
Vol 193 (3) ◽  
pp. 533-538 ◽  
Author(s):  
P. D'Angelo ◽  
A. Hrisoho ◽  
P. Jarron ◽  
P.F. Manfredi ◽  
J. Poinsignon
Keyword(s):  
High Energy ◽  
Low Noise ◽  
Bipolar Transistor ◽  
Silicon Detectors ◽  
Energy Applications
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