Measurement of ionization loss of 50 GeV protons in silicon with smoothly tunable up to 1 cm thickness using a single flat detector

Research of the ionization loss of 50 GeV protons, the path of which in the depleted layer of the silicon detector was smoothly regulated in the range from 0.3 to 10 mm, is presented. In the experiment, we used a flat silicon detector with a fixed thickness of the depleted layer of 300 μm. The smooth regulation of the path was realized due to the variation of the angle between the surface of the detector and the incident proton beam. The comparison of experimental data and theoretical calculations of the ionization loss demonstrates agreement in all range of thicknesses. Results of the research can be used in order to control the angle between the surface of the detector and the incident beam of relativistic particles. Besides, the results can be used in the analysis of data from astrophysical silicon detectors of charged particles if high-energy particles crossed flat detectors at arbitrary angle.

TCAD simulations of non-irradiated and irradiated low-gain avalanche diodes and comparison with measurements

In this work, the results of Technology-CAD (TCAD) device-level simulations of non-irradiated and irradiated Low-Gain Avalanche Diode (LGAD) detectors and their validation against experimental data will be presented. Thanks to the intrinsic multiplication of the charge within these silicon sensors, it is possible to improve the signal to noise ratio thus limiting its drastic reduction with fluence, as it happens instead for standard silicon detectors. Therefore, special attention has been devoted to the choice of the avalanche model, which allows the simulation findings to better fit with experimental data. Moreover, a radiation damage model (called “New University of Perugia TCAD model”) has been fully implemented within the simulation environment, to have a predictive insight into the electrical behavior and the charge collection properties of the LGAD detectors, up to the highest particle fluences expected in the future High Energy Physics (HEP) experiments. This numerical model allows to consider the comprehensive bulk and surface damage effects induced by radiation on silicon sensors. By coupling the “New University of Perugia TCAD model” with an analytical model that describes the mechanism of acceptor removal in the multiplication layer, it has been possible to reproduce experimental data with high accuracy, demonstrating the reliability of the simulation framework.

Microdosimetric characterization of a clinical proton therapy beam: comparison between simulated lineal energy distributions in spherical water targets and experimental measurements with a silicon detector

Objective Treatment planning based on computer simulations were proposed to account for the increase in the relative biological effectiveness (RBE) of proton radiotherapy beams near to the edges of the irradiated volume. Since silicon detectors could be used to validate the results of these simulations, it is important to explore the limitations of this comparison. Approach Microdosimetric measurements with a MicroPlus Bridge V2 silicon detector (thickness = 10 µm) were performed along the Bragg peak of a clinical proton beam. The lineal energy distributions, the dose mean values, and the RBE calculated with a biological weighting function were compared with simulations with PHITS (microdosimetric target = 1 µm water sphere), and published clonogenic survival in vitro RBE data for the V79 cell line. The effect of the silicon-to-water conversion was also investigated by comparing three different methodologies (conversion based on a single value, novel bin-to-bin conversions based on SRIM and PSTAR). Main results Mainly due to differences in the microdosimetric targets, the experimental dose-mean lineal energy and RBE values at the distal edge were respectively up to 53% and 28% lower than the simulated ones. Furthermore, the methodology chosen for the silicon-to-water conversion was proven to affect the dose mean lineal energy and the RBE10 up to 32% and 11% respectively. The best methodology to compensate for this underestimation was the bin-to-bin silicon-to-water conversion based on PSTAR. Significance This work represents the first comparison between PHITS-simulated lineal energy distributions in water targets and corresponding experimental spectra measured with silicon detectors. Furthermore, the effect of the silicon-to-water conversion on the RBE was explored for the first time. The proposed methodology based on the PSTAR bin-to-bin conversion appears to provide superior results with respect to commonly used single scaling factors and is recommended for future studies.

An LGAD-Based Full Active Target for the PIONEER Experiment

PIONEER is a next-generation experiment to measure the charged pion branching ratios to electrons vs. muons Re/μ=Γπ+→e+ν(γ)Γπ+→μ+ν(γ) and pion beta decay (Pib) π+→π0eν. The pion to muon decay (π→μ→e) has four orders of magnitude higher probability than the pion to electron decay (π→eν). To achieve the necessary branching-ratio precision it is crucial to suppress the π→μ→e energy spectrum that overlaps with the low energy tail of π→eν. A high granularity active target (ATAR) is being designed to suppress the muon decay background sufficiently so that this tail can be directly measured. In addition, ATAR will provide detailed 4D tracking information to separate the energy deposits of the pion decay products in both position and time. This will suppress other significant systematic uncertainties (pulse pile-up, decay in flight of slow pions) to <0.01%, allowing the overall uncertainty in to be reduced to O (0.01%). The chosen technology for the ATAR is Low Gain Avalanche Detector (LGAD). These are thin silicon detectors (down to 50 μm in thickness or less) with moderate internal signal amplification and great time resolution. To achieve a 100% active region several emerging technologies are being evaluated, such as AC-LGADs and TI-LGADs. A dynamic range from MiP (positron) to several MeV (pion/muon) of deposited charge is expected, the detection and separation of close-by hits in such a wide dynamic range will be a main challenge. Furthermore, the compactness and the requirement of low inactive material of the ATAR present challenges for the readout system, forcing the amplifier chip and digitizer to be positioned away from the active region.

Silicon: quantum dot photovoltage triodes

Silicon is widespread in modern electronics, but its electronic bandgap prevents the detection of infrared radiation at wavelengths above 1,100 nanometers, which limits its applications in multiple fields such as night vision, health monitoring and space navigation systems. It is therefore of interest to integrate silicon with infrared-sensitive materials to broaden its detection wavelength. Here we demonstrate a photovoltage triode that can use silicon as the emitter but is also sensitive to infrared spectra owing to the heterointegrated quantum dot light absorber. The photovoltage generated at the quantum dot base region, attracting holes from silicon, leads to high responsivity (exceeding 410 A·W−1 with Vbias of −1.5 V), and a widely self-tunable spectral response. Our device has the maximal specific detectivity (4.73 × 1013 Jones with Vbias of −0.4 V) at 1,550 nm among the infrared sensitized silicon detectors, which opens a new path towards infrared and visible imaging in one chip with silicon technology compatibility.

Degradation of silicon detectors under long-term irradiation by 252Cf fission products

The response function of the recoil nuclei in detectors designed for detection of neutrinos or dark matter particles can be determined only through usage of a neutron source with a known energy spectrum. A possible solution for a compact neutron calibration source is a combination of a 252Cf neutron source and a semiconductor detector that detects fission fragments, and thus records the neutron emission moment. This work is devoted to the degradation study of the operating parameters for silicon semiconductor detectors irradiated by fission fragments of the nuclide of 252 Cf. Two types of Si detectors were under investigations - silicon-lithium Si(Li) p-i-n detectors and silicon surface barrier detectors. As a result of the measurements, the maximum permissible radiation doses for the correct operation of both types of detectors and the relation of the received radiation dose to the spectroscopic characteristics of the detectors were determined.

Characterization of Diamond and Silicon Carbide Detectors With Fission Fragments

Experimental fission studies for reaction physics or nuclear spectroscopy can profit from fast, efficient, and radiation-resistant fission fragment (FF) detectors. When such experiments are performed in-beam in intense thermal neutron beams, additional constraints arise in terms of target-detector interface, beam-induced background, etc. Therefore, wide gap semi-conductor detectors were tested with the aim of developing innovative instrumentation for such applications. The detector characterization was performed with mass- and energy-separated fission fragment beams at the ILL (Institut Laue Langevin) LOHENGRIN spectrometer. Two single crystal diamonds, three polycrystalline and one diamond-on-iridium as well as a silicon carbide detector were characterized as solid state ionization chamber for FF detection. Timing measurements were performed with a 500-µm thick single crystal diamond detector read out by a broadband amplifier. A timing resolution of ∼10.2 ps RMS was obtained for FF with mass A = 98 at 90 MeV kinetic energy. Using a spectroscopic preamplifier developed at INFN-Milano, the energy resolution measured for the same FF was found to be slightly better for a ∼50-µm thin single crystal diamond detector (∼1.4% RMS) than for the 500-µm thick one (∼1.6% RMS), while a value of 3.4% RMS was obtained with the 400-µm silicon carbide detector. The Pulse Height Defect (PHD), which is significant in silicon detectors, was also investigated with the two single crystal diamond detectors. The comparison with results from α and triton measurements enabled us to conclude that PHD leads to ∼50% loss of the initial generated charge carriers for FF. In view of these results, a possible detector configuration and integration for in-beam experiments has been discussed.