High-Voltage Operation of Surface Barrier Silicon Detectors With a Side Groove

1982 ◽  
Vol 16 ◽  
Author(s):  
S. Ohkawa ◽  
K. Husimi ◽  
C. Kim ◽  
Y. Kim ◽  
D. Itoh
Keyword(s):  
Bias Voltage ◽  
Side Surface ◽  
Low Noise ◽  
Excess Noise ◽  
Surface Barrier ◽  
Carrier Injection ◽  
Silicon Detectors ◽  
Abrupt Decrease ◽  
Output Noise ◽  
Barrier Detector

ABSTRACTA remarkable characteristic of the surface barrier detector with a side groove cooled down to the nitrogen temperature has been observed. That is an abrupt decrease of the output noise at a definite voltage in increasing the bias voltage slowly. This is caused by a carrier injection from the side surface of the groove near the neck narrowed by the side groove. This excess noise disappears after the depletion layer goes through the neck of the side groove. This is confirmed by the fact that the capacitance of the detector decreases abruptly with the decrease of the noise at the same bias voltage. This detector is capable to be operated at a voltage higher than this voltage with a low noise. The maximum bias voltage applied to the detector is 3000 V.

Branching Ratios and Lifetimes of 25Mg Levels below 5.2 MeV

1974 ◽  
Vol 52 (23) ◽  
pp. 2329-2342 ◽  
Author(s):  
R. W. Ollerhead ◽  
D. C. Kean ◽  
R. M. Gorman ◽  
M. B. Thomson
Keyword(s):  
Doppler Shift ◽  
Gamma Ray ◽  
Branching Ratios ◽  
Surface Barrier ◽  
Surface Barrier Detector ◽  
Rotational Model ◽  
Rotational Bands ◽  
Barrier Detector ◽  
Combined Data

All levels below 5.2 MeV in 25Mg have been studied using the reaction 25Mg(p, p′γ). In-elastically scattered protons were detected in an annular surface barrier detector located at 180°; coincidence gamma-ray spectra were obtained at Ge (Li) detector angles of 90°, 45°, and 135°. Level energies were determined from unshifted gamma-ray energies recorded in the 90° spectra. Lifetimes were obtained from the attenuated Doppler shift of gamma-ray energies recorded in spectra taken at forward and backward angles. Branching ratios were deduced from the combined data of all three angles. The identification of levels as members of rotational bands is discussed, and transition strengths deduced from the present measurements are compared with predictions of the simple rotational model.

Annular transmission surface-barrier detector

1986 ◽  
Vol 9 (4) ◽  
pp. 271-276
Author(s):  
Ladislav Hrubčin ◽  
Arnošt Guldan
Keyword(s):  
Surface Barrier ◽  
Surface Barrier Detector ◽  
Barrier Detector

Low-noise oxide passivated p+n silicon detectors

1972 ◽  
Vol 101 (1) ◽  
pp. 43-46 ◽  
Author(s):  
G. Keil ◽  
E. Lindner
Keyword(s):  
Low Noise ◽  
Silicon Detectors

A Preliminary Observation on AgGaSe2 as a Nuclear Radiation Detector

1982 ◽  
Vol 16 ◽  
Author(s):  
Eiji Sakai ◽  
Hiromichi Horinaka ◽  
Hajimu Sonomura ◽  
Takeshi Miyauchi
Keyword(s):  
Radiation Detector ◽  
Silicon Detector ◽  
Alpha Particles ◽  
Nuclear Radiation ◽  
Surface Barrier ◽  
Applied Bias Voltage ◽  
Nuclear Radiation Detector ◽  
Barrier Detector ◽  
Temperature Noise ◽  
Silicon Surface Barrier Detector

ABSTRACTAn about 108 ohm-cm AgGaSe2 crystal of 0.5 mm × 4 mm × 4 mm was polished and contacts were made by evaporating 130 μg/cm2 gold of 3 mm diameter on the two faces of the crystal. The detector was tested using 5.5 MeV alpha-particles at room temperature. Noise increased above an applied bias voltage of 80 V. For + 50 V applied on the electrode opposite to the particle incident electrode, i.e., for electron traversal mode, the preamplifier output pulses showed a risetime of 20 μs and an amplitude of about one-tenth of that obtained from a silicon surface-barrier detector whereas the silicon detector showed a risetime of 0.07 μs. For - 50 V applied on the same electrode, i.e., for hole traversal mode, no pulses were observed.

Non injecting back-contacts in surface barrier silicon detectors

1967 ◽  
Vol 53 ◽  
pp. 337-338 ◽  
Author(s):  
G. Fabri ◽  
M. Nasini ◽  
G. Redaelli
Keyword(s):  
Surface Barrier ◽  
Silicon Detectors
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