scholarly journals Neural Evidence of Superior Memory: How to Capture Brain Activities of Encoding Processes Underlying Superior Memory

2019 ◽  
Vol 13 ◽  
Author(s):  
Jong-Sung Yoon ◽  
Jeremy Harper ◽  
Walter R. Boot ◽  
Yanfei Gong ◽  
Edward M. Bernat
Keyword(s):  
2021 ◽  
Author(s):  
Tamar Gefen ◽  
Allegra Kawles ◽  
Beth Makowski-Woidan ◽  
Janessa Engelmeyer ◽  
Ivan Ayala ◽  
...  

Abstract Advancing age is typically associated with declining memory capacity and increased risk of Alzheimer’s disease (AD). Markers of AD such as amyloid plaques (AP) and neurofibrillary tangles (NFTs) are commonly found in the brains of cognitively average elderly but in more limited distribution than in those at the mild cognitive impairment and dementia stages of AD. Cognitive SuperAgers are individuals over age 80 who show superior memory capacity, at a level consistent with individuals 20–30 years their junior. Using a stereological approach, the current study quantitated the presence of AD markers in the memory-associated entorhinal cortex (ERC) of seven SuperAgers compared with six age-matched cognitively average normal control individuals. Amyloid plaques and NFTs were visualized using Thioflavin-S histofluorescence, 6E10, and PHF-1 immunohistochemistry. Unbiased stereological analysis revealed significantly more NFTs in ERC in cognitively average normal controls compared with SuperAgers (P < 0.05) by a difference of ~3-fold. There were no significant differences in plaque density. To highlight relative magnitude, cases with typical amnestic dementia of AD showed nearly 100 times more entorhinal NFTs than SuperAgers. The results suggest that resistance to age-related neurofibrillary degeneration in the ERC may be one factor contributing to preserved memory in SuperAgers.


2018 ◽  
Vol 39 (12) ◽  
pp. 1856-1859 ◽  
Author(s):  
Rini Lahiri ◽  
Aniruddha Mondal

2017 ◽  
Vol 13 (7) ◽  
pp. P1463-P1464 ◽  
Author(s):  
Theresa M. Harrison ◽  
Samuel N. Lockhart ◽  
Suzanne L. Baker ◽  
William J. Jagust

2013 ◽  
Author(s):  
Elizabeth Valentine
Keyword(s):  

Electronics ◽  
2020 ◽  
Vol 9 (7) ◽  
pp. 1106 ◽  
Author(s):  
Asim Senapati ◽  
Sourav Roy ◽  
Yu-Feng Lin ◽  
Mrinmoy Dutta ◽  
Siddheswar Maikap

Diode-like threshold switching and high on/off ratio characteristics by using an Al/Ag/Al2O3/TiN conductive bridge resistive random access memories (CBRAM) have been obtained. The 5 nm-thick Al2O3 device shows superior memory parameters such as low forming voltage and higher switching uniformity as compared to the 20 nm-thick switching layer, owing to higher electric field across the material. Capacitance-voltage (CV) characteristics are observed for the Ag/Al2O3/TiN devices, suggesting the unipolar/bipolar resistive switching phenomena. Negative capacitance (NC) at low frequency proves inductive behavior of the CBRAM devices due to Ag ion migration into the Al2O3 oxide-electrolyte. Thicker Al2O3 film shows diode-like threshold switching behavior with long consecutive 10,000 cycles. It has been found that a thinner Al2O3 device has a larger on/off ratio of >108 as compared to a thicker one. Program/erase (P/E) cycles, read endurance, and data retention of the thinner Al2O3 oxide-electrolyte shows superior phenomena than the thicker electrolyte. The switching mechanism is also explored.


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