Electrical and Optical Characteristics of SSI-LED Made from Capacitor Containing Tri-Layer WOx Embedded Zr-Doped HfOx Gate Dielectric

Solid-state incandescent light emitting devices made from MOS capacitors with the WOx embedded Zr-doped HfOx gate dielectric were characterized for electrical and optical characteristics. Devices made from capacitors containing Zr-doped HfOx and WOx, gate dielectrics were also fabricated for comparison. The device with the WOx embedded gate dielectric layer had electrical and light emitting characteristics between that with WOx gate dielectric layer and that with the Zr-doped HfOx but no WOx embedded gate dielectric layer. The difference can be explained by the nano-resistor formation process and the content of the high emissivity W in the nano-resistor. The device made from the WOx embedded Zr-doped HfOx gate dielectric MOS capacitor is applicable to areas where uniform emission of warm white light is required.

Studies on electrical characteristics of HKMG MOS capacitor by high pressure annealing

High pressure annealing technique at 6 atm over a wide range of temperature (200-450˚C) was introduced as post metal annealing on high-k/metal gate metal-oxide-semiconductor capacitor. To verify the ability of HPA in improving interface trap density, leakage issue the other MOS capacitor with same structure was annealed by MWA for comparison. The electrical performance of the capacitors under different etching mechanism was analyzed and the difference in characteristics such as flat-band voltage shift, oxide trapped charge, interface state density and leakage current were compared. The results show that high pressure annealing process is more effective to minimize the oxide trapped charged at low temperature than by high power MWA at 3000W, and the reduction in leakage current density after high pressure anneal at low temperature corresponds to the reduction in charge traps. High pressure annealing demonstrates great potential as the post-metallization annealing process for the high-k/metal gate structure .

Characteristics of HfO2 Thin Film Capacitor Deposited by RF Magnetron Sputtering

High-k HfO2 thin films were assessed as a gate dielectric for possible oxide thin-film transistor applications. A HfO2 gate dielectric layer was deposited by radio frequency magnetron sputtering (RF-MS) of a sintered ceramic target at the working pressure of 5 mTorr and annealed at various annealing conditions. X-ray diffraction (XRD) and UV-Vis transmission spectroscopy were carried out to determine the structure and optical transparency of the sputtered HfO2 films, respectively. The electrical characteristics of the HfO2 films were evaluated using the metal-oxide-semiconductor (MOS) capacitor structure of Ti/HfO2/n++-Si. The capacitance-voltage (C-V) and current-voltage (I-V) measurements were taken using an impedance analyzer (Keysight, E4990A) and semiconductor parameter analyzer (Keithley, 4200-SCS), respectively. A dielectric constant of up to 8 with a leakage current as low as 1.0 × 10−9 A/cm2 at 2.0 V were observed.