Surface Structuring of Diamond-Like Carbon Films by Chemical Etching of Zinc Inclusions

A diamond-like carbon (DLC) film with a nanostructured surface can be produced in a two-step process. At first, a metal-containing DLC film is deposited. Here, the combination of plasma source ion implantation using a hydrocarbon gas and magnetron sputtering of a zinc target was used. Next, the metal particles within the surface are dissolved by an etchant (HNO3:H2O solution in this case). Since Zn particles in the surface of Zn-DLC films have a diameter of 100–200 nm, the resulting surface structures possess the same dimensions, thus covering a range that is accessible neither by mask deposition techniques nor by etching of other metal-containing DLC films, such as Cu-DLC. The surface morphology of the etched Zn-DLC films depends on the initial metal content of the film. With a low zinc concentration of about 10 at.%, separate holes are produced within the surface. Higher zinc concentrations (40 at.% or above) lead to a surface with an intrinsic roughness.

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Preparation of Metal-Containing Diamond-Like Carbon Films by Magnetron Sputtering and Plasma Source Ion Implantation and Their Properties

Advances in Materials Science and Engineering ◽

10.1155/2017/9082164 ◽

2017 ◽

Vol 2017 ◽

pp. 1-8 ◽

Cited By ~ 9

Author(s):

Stefan Flege ◽

Ruriko Hatada ◽

Andreas Hanauer ◽

Wolfgang Ensinger ◽

Takao Morimura ◽

...

Keyword(s):

Ion Implantation ◽

Magnetron Sputtering ◽

Plasma Source ◽

Carbon Films ◽

Diamond Like Carbon ◽

Preparation Technique ◽

Plasma Source Ion Implantation ◽

Hydrocarbon Gas ◽

Sputter Yield ◽

Metal Addition

Metal-containing diamond-like carbon (Me-DLC) films were prepared by a combination of plasma source ion implantation (PSII) and reactive magnetron sputtering. Two metals were used that differ in their tendency to form carbide and possess a different sputter yield, that is, Cu with a relatively high sputter yield and Ti with a comparatively low one. The DLC film preparation was based on the hydrocarbon gas ethylene (C2H4). The preparation technique is described and the parameters influencing the metal content within the film are discussed. Film properties that are changed by the metal addition, such as structure, electrical resistivity, and friction coefficient, were evaluated and compared with those of pure DLC films as well as with literature values for Me-DLC films prepared with a different hydrocarbon gas or containing other metals.

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Deposition of Diamond-Like Carbon Films on Inner Wall Surfaces of Millimeter-Size-Diameter Steel Tubes by Plasma Source Ion Implantation

IEEE Transactions on Plasma Science ◽

10.1109/tps.2011.2168829 ◽

2011 ◽

Vol 39 (11) ◽

pp. 3140-3143 ◽

Cited By ~ 10

Author(s):

K. Baba ◽

R. Hatada ◽

S. Flege ◽

W. Ensinger

Keyword(s):

Ion Implantation ◽

Plasma Source ◽

Carbon Films ◽

Diamond Like Carbon ◽

Steel Tubes ◽

Plasma Source Ion Implantation

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Deposition of diamond-like carbon films using plasma source ion implantation with pulsed plasmas

Surface and Coatings Technology ◽

10.1016/s0257-8972(00)00588-0 ◽

2000 ◽

Vol 128-129 ◽

pp. 260-264 ◽

Cited By ~ 25

Author(s):

S Miyagawa ◽

S Nakao ◽

K Saitoh ◽

K Baba ◽

Y Miyagawa

Keyword(s):

Ion Implantation ◽

Plasma Source ◽

Carbon Films ◽

Diamond Like Carbon ◽

Pulsed Plasmas ◽

Plasma Source Ion Implantation

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Preparation of Aniline-Based Nitrogen-Containing Diamond-Like Carbon Films with Low Electrical Resistivity

Coatings ◽

10.3390/coatings10010054 ◽

2020 ◽

Vol 10 (1) ◽

pp. 54 ◽

Cited By ~ 4

Author(s):

Ruriko Hatada ◽

Stefan Flege ◽

Wolfgang Ensinger ◽

Sabine Hesse ◽

Shuji Tanabe ◽

...

Keyword(s):

Electrical Resistivity ◽

Reference Sample ◽

Plasma Source ◽

Carbon Films ◽

Limited Area ◽

Diamond Like Carbon ◽

Film Properties ◽

High Electrical Resistivity ◽

Plasma Source Ion Implantation ◽

Lower Resistivity

The intrinsic high electrical resistivity of diamond-like carbon (DLC) films prevents their use in certain applications. The addition of metal or nitrogen during the preparation of the DLC films leads to a lower resistivity of the films, but it is usually accompanied by several disadvantages, such as a potential contamination risk for surfaces in contact with the film, a limited area that can be coated, deteriorated mechanical properties or low deposition rates of the films. To avoid these problems, DLC films have been prepared by plasma source ion implantation using aniline as a precursor gas, either in pure form or mixed with acetylene. The nitrogen from the precursor aniline is incorporated into the DLC films, leading to a reduced electrical resistivity. Film properties such as hardness, surface roughness and friction coefficient are nearly unchanged as compared to an additionally prepared reference sample, which was deposited using only pure acetylene as precursor gas.

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