Contemporary Apparatus for Single Crystals Growth of Oxide Compounds and Metals by Optical Floating Zone (FZ)
Keyword(s):
Gas Flow
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A contemporary apparatus with radiation (light) heating for growth of single crystals of refractory oxides and metals is described. To reduce the dissociation or evaporation of the melt or crystal components, the growth process was carried out in oxygen or an alternative gas at pressures up to 100 bar. The annealing system applied directly in the growth process at 1650 °C under O2 pressure and at temperatures up to 2500 °C under protective gas flow, allows the obtaining of large and perfect single crystals. Many single crystals of oxide materials, including incongruently melting substances, such as Y3Fe5O12, Gd3Fe5O12, BaFe12O19, SrFe12O19, BaFe12-x AlxO19, and many others have been grown, and much more could be grown.
1986 ◽
Vol 74
(2)
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pp. 385-390
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Keyword(s):
1986 ◽
Vol 76
(2)
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pp. 311-316
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1985 ◽
Vol 73
(1)
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pp. 175-178
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1996 ◽
Vol 256
(3-4)
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pp. 371-377
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1994 ◽
Vol 29
(4)
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pp. 385-391
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1961 ◽
Vol 38
(4)
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pp. 167-167
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1997 ◽
Vol 290
(1-2)
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pp. 57-62
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