scholarly journals Optical Sideband Injection Locking Using Waveguide Based External Cavity Semiconductor Lasers for Narrow-Line, Tunable Microwave Generation

Photonics ◽  
2019 ◽  
Vol 6 (3) ◽  
pp. 81 ◽  
Author(s):  
Md. Rezaul Hoque Khan ◽  
Md. Ashraful Hoque
Keyword(s):  
Phase Noise ◽  
Semiconductor Lasers ◽  
External Cavity ◽  
Injection Locking ◽  
Optical Injection ◽  
Optical Cavities ◽  
Microwave Generation ◽  
Microwave Signals ◽  
Tunable Frequency ◽  
External Cavity Semiconductor Lasers

The generation by optical injection locking of spectrally unadulterated microwave signals using waveguide based external cavity semiconductor lasers (WECSL) is demonstrated. A tunable frequency of 2–11 GHz, limited by the modulator’s bandwidth and the photodetector (PD), was created as proof-of-experiment by the injection locking of the two WESCLs. A single sideband (SSB) phase noise of −75 dBc/Hz from the generated carrier at 10 kHz offset and a phase noise variance at an optimum injection ratio region was 0.03 rad2, corresponding to 1.7°, were observed. The main feature of this approach is the consolidation of the upsides of microwave generation at low phase noise with a broad tuning range and the capacity of hybrid photonic integration. In addition, the injection locking characteristics were used to determine the Q factor of the complicated optical cavities with unknown inner losses.

scholarly journals Optically-Injected-Semiconductor-Laser-Based Tunable Dual-Frequency Optoelectronic Oscillator under Subharmonic Microwave Modulation

2021 ◽  
Vol 11 (9) ◽  
pp. 3961
Author(s):  
Jiayi Zhao ◽  
Yiying Gu ◽  
Jian Li ◽  
Xiaozhou Li ◽  
Mingshan Zhao ◽  
...  
Keyword(s):  
Phase Noise ◽  
Semiconductor Laser ◽  
Frequency Offset ◽  
Optical Injection ◽  
Dual Frequency ◽  
Optoelectronic Oscillator ◽  
Mode Suppression ◽  
Microwave Signals ◽  
Microwave Modulation ◽  
Tunable Frequency

To obtain low-phase-noise microwave signals with a widely tunable frequency range, an optoelectronic oscillator (OEO) was constructed on the basis of an optically injected semiconductor laser (OISL) for the generation of high-quality microwave signals. Our OEO relied on the effect of wavelength-selective amplification and the period-one (P1) oscillation under optical injection. The signal’s frequency stability, side-mode-suppression ratio (SMSR) and linewidth were optimized by the subharmonic microwave modulation technique in the OEO loop. The experimental results showed that the frequency of the signal obtained by the proposed OEO could be tuned up to 18 GHz. Using the dual-loop OEO structure, the SMSR was increased to 55 dB. Moreover, the phase noise of the obtained microwave signal was lower than −81 dBc/Hz at 1 kHz frequency offset and −119 dBc/Hz at 10 kHz frequency offset. This was achieved by introducing subharmonic microwave modulation in the OEO loop, respectively. Furthermore, via the utilization of a Fabry–Perot laser diode (FP-LD) in the proposed structure, a dual-loop OEO with different dual-frequency configurations (which could be tuned up to 12 and 18 GHz) was obtained.

scholarly journals Active Mode-Hop Suppression in Littman-type External Cavity Semiconductor Lasers

1999 ◽  
Vol 119 (7) ◽  
pp. 815-820
Author(s):  
Shigenori Mattori ◽  
Takanori Saitoh ◽  
Shigeru Kinugawa ◽  
Koichiro Miyagi
Keyword(s):  
Semiconductor Lasers ◽  
External Cavity ◽  
Active Mode ◽  
External Cavity Semiconductor Lasers
Sign in / Sign up

Export Citation Format

Share Document