scholarly journals Nonlinear Dynamics of Interband Cascade Laser Subjected to Optical Feedback

Photonics ◽  
2021 ◽  
Vol 8 (9) ◽  
pp. 366
Author(s):  
Hong Han ◽  
Xumin Cheng ◽  
Zhiwei Jia ◽  
K. Alan Shore

We present a theoretical study of the nonlinear dynamics of a long external cavity delayed optical feedback-induced interband cascade laser (ICL). Using the modified Lang–Kobayashi equations, we numerically investigate the effects of some key parameters on the first Hopf bifurcation point of ICL with optical feedback, such as the delay time (τf), pump current (I), linewidth enhancement factor (LEF), stage number (m) and feedback strength (fext). It is found that compared with τf, I, LEF and m have a significant effect on the stability of the ICL. Additionally, our results show that an ICL with few stage numbers subjected to external cavity optical feedback is more susceptible to exhibiting chaos. The chaos bandwidth dependences on m, I and fext are investigated, and 8 GHz bandwidth mid-infrared chaos is observed.

2007 ◽  
Vol 17 (05) ◽  
pp. 1575-1588 ◽  
Author(s):  
VIVI ROTTSCHÄFER ◽  
BERND KRAUSKOPF

We perform an analytical study of the external cavity modes of a semiconductor laser subject to conventional optical feedback as modeled by the well-known Lang–Kobayashi equations. Specifically, the bifurcation set is derived in the three-dimensional parameter space of feedback phase, feedback strength and pump current of the laser. Different open regions in this space correspond to different numbers of physically relevant external cavity modes of the laser. Some of their stability properties are determined from the characteristic equation.


Photonics ◽  
2021 ◽  
Vol 8 (8) ◽  
pp. 300
Author(s):  
Xiang-Hui Wang ◽  
Zheng-Mao Wu ◽  
Zai-Fu Jiang ◽  
Guang-Qiong Xia

A modified rate equation model was presented to theoretically investigate the nonlinear dynamics of solitary two-state quantum dot lasers (TSQDLs) under optical feedback. The simulated results showed that, for a TSQDL biased at a relatively high current, the ground-state (GS) and excited-state (ES) lasing of the TSQDL can be stimulated simultaneously. After introducing optical feedback, both GS lasing and ES lasing can exhibit rich nonlinear dynamic states including steady state (S), period one (P1), period two (P2), multi-period (MP), and chaotic (C) state under different feedback strength and phase offset, respectively, and the dynamic states for the two lasing types are always identical. Furthermore, the influences of the linewidth enhancement factor (LEF) on the nonlinear dynamical state distribution of TSQDLs in the parameter space of feedback strength and phase offset were also analyzed. For a TSQDL with a larger LEF, much more dynamical states can be observed, and the parameter regions for two lasing types operating at chaotic state are widened after introducing optical feedback.


2020 ◽  
Author(s):  
Junaid Khan

This paper presents a novel algorithm for measuring the linewidth enhancement factor of semiconductor lasers and the optical feedback level factor in a semiconductor laser with an external cavity. The proposed approach is based on analysis of the self-mixing phase equation to deduce equations for finding parameters given only knowledge of the perturbed phase. The effectiveness of the method has been validated with accuracy of 8.6%and 1.7% for 'C' and alpha respectively while covering all feedback regimes.


Photonics ◽  
2020 ◽  
Vol 7 (1) ◽  
pp. 22 ◽  
Author(s):  
Alexandre Locquet

This paper reviews experimental investigations of the route to chaos of a semiconductor laser subjected to optical feedback from a distant reflector. When the laser is biased close to threshold, as the feedback strength is increased, an alternation between stable continuous wave (CW) behavior and irregular, chaotic fluctuations, involving numerous external-cavity modes, is observed. CW operation occurs on an external-cavity mode whose optical frequency is significantly lower than that of the solitary laser. The scenario is significantly different for larger currents as the feedback level is increased. At low feedback, the laser displays periodic or quasiperiodic behavior, mostly around external-cavity modes whose frequency is slightly larger than that of the solitary laser. As the feedback level increases, the RF and optical frequencies involved progressively lock until complete locking is achieved in a mixed external-cavity mode state. In this regime, the optical intensity and voltage oscillate at a frequency that is also equal to the optical frequency spacing between the modes participating in the dynamics. For even higher feedback, the locking cannot be maintained and the laser displays fully developed coherence collapse.


2020 ◽  
Author(s):  
Junaid Khan

This paper presents a novel algorithm for measuring the linewidth enhancement factor of semiconductor lasers and the optical feedback level factor in a semiconductor laser with an external cavity. The proposed approach is based on analysis of the self-mixing phase equation to deduce equations for finding parameters given only knowledge of the perturbed phase. The effectiveness of the method has been validated with accuracy of 8.6%and 1.7% for 'C' and alpha respectively while covering all feedback regimes.


2012 ◽  
Vol 22 (10) ◽  
pp. 1250246 ◽  
Author(s):  
CHRISTIAN OTTO ◽  
BJÖRN GLOBISCH ◽  
KATHY LÜDGE ◽  
ECKEHARD SCHÖLL ◽  
THOMAS ERNEUX

We study a five-variable electron-hole model for a quantum-dot (QD) laser subject to optical feedback. The model includes microscopically computed Coulomb scattering rates. We consider the case of a low linewidth enhancement factor and a short external cavity. We determine the bifurcation diagram of the first three external cavity modes and analyze their bifurcations. The first Hopf bifurcation marks the critical feedback rate below which the laser is stable. We derive an analytical approximation for this critical feedback rate that is proportional to the damping rate of the relaxation oscillations (ROs) and inversely proportional to the linewidth enhancement factor. The damping rate is described in terms of the carrier lifetimes. They depend on the specific band structure of the QD device and they are computed numerically.


2006 ◽  
Author(s):  
Mikel Arizaleta Arteaga ◽  
Heiko J. Unold ◽  
Johannes M. Ostermann ◽  
Rainer Michalzik ◽  
Manuel López-Amo ◽  
...  

1983 ◽  
Vol 19 (22) ◽  
pp. 938 ◽  
Author(s):  
E. Patzak ◽  
H. Olesen ◽  
A. Sugimura ◽  
S. Saito ◽  
T. Mukai

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