scholarly journals Clusters of Spin Valve Sensors in 3D Magnetic Field of a Label

Sensors ◽  
2021 ◽  
Vol 21 (11) ◽  
pp. 3595
Author(s):  
Georgy V. Babaytsev ◽  
Nikolay G. Chechenin ◽  
Irina O. Dzhun ◽  
Mikhail G. Kozin ◽  
Alexey V. Makunin ◽  
...  

Magnetic field sensors based on the giant magnetoresistance (GMR) effect have a number of practical current and future applications. We report on a modeling of the magnetoresistive response of moving spin-valve (SV) GMR sensors combined in certain cluster networks to an inhomogeneous magnetic field of a label. We predicted a large variety of sensor responses dependent on the number of sensors in the cluster, their types of interconnections, the orientation of the cluster, and the trajectory of sensor motion relative to the label. The model included a specific shape of the label, producing an inhomogeneous magnetic field. The results can be used for the optimal design of positioning devices.

2001 ◽  
Vol 91 (1-2) ◽  
pp. 173-176 ◽  
Author(s):  
A.I Savchuk ◽  
P.I Nikitin ◽  
S.Yu Paranchych ◽  
M.D Andriychuk ◽  
S.I Nikitin

2018 ◽  
Vol 54 (11) ◽  
pp. 1-4 ◽  
Author(s):  
Yi-Shian Chiang ◽  
Xuan Thang Trinh ◽  
Jen-Tzong Jeng

2001 ◽  
Vol 672 ◽  
Author(s):  
Haydn N.G. Wadley ◽  
Xiaowang Zhou ◽  
Robert A. Johnson

ABSTRACTThe emergence of metal multilayers that exhibit giant magnetoresistance (GMR) has led to new magnetic field sensors, and approaches for nonvolatile random access memories. Controlling the atomic scale structure across the many interfaces within these multilayers is central to improve the performance of these devices. However, the ability to manipulate atomic arrangements at this scale requires an understanding of the mechanisms that control heterometal film growth during vapor deposition. It is important to develop methods that enable prediction of the effects of deposition conditions upon this structure. Atomistic simulation approaches have been combined with deposition reactor models to achieve this. We have applied these approaches to analyze the atomic scale structure of sputter deposited CoFe/Cu/CoFe giant magnetoresistive multilayers similar to those used for magnetic field sensing. Significant intermixing is revealed at the CoFe-on-Cu interface, but not at the Cu-on-CoFe interface. Recent experiments verified these predictions. The insights provide a basis for the development of processes that inhibit thermally activated atomic diffusion while allowing the controlled use of the metal atom impact energy and inert gas ions to manipulate the structure of interfaces.


2015 ◽  
Vol 51 (11) ◽  
pp. 1-4 ◽  
Author(s):  
Van-Su Luong ◽  
Jen-Tzong Jeng ◽  
Bor-Lin Lai ◽  
Jen-Hwa Hsu ◽  
Ching-Ray Chang ◽  
...  

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