strain compensation
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Author(s):  
Guang-Ming Cao ◽  
Zhi-Wei Gao ◽  
Xin-Yu Gao

This article builds a stress–strain prediction model based on production data from the steel industry by using machine learning algorithms. Based on the stress–strain data of 9Ni steel hot deformation behavior, the prediction model of flow stress constitutive equation of 9Ni steel is established. Four models, including Arrhenius-type model considering strain compensation, Arrhenius-type model of Stochastic Configuration Networks (SCNs) neural network, Arrhenius-type model of Multi-objective Particle Swarm Optimization (AMPSO) and Support Vector Machine (SVM) model, are adopted in this research. The results show that the Arrhenius-type model considering strain compensation can predict the stress trend under different deformation conditions, but its prediction accuracy has some deviation. The prediction model based on SVM algorithm has the best prediction accuracy. The square of Correlation Coefficient (R2), the Average Absolute Relative Error (AARE), and Mean Square Error (MSE) are 0.99996, 0.002455, and 0.1998, respectively. Based on the data of 9Ni steel hot deformation behavior, the prediction models of machine learning algorithm have good application prospects in steel industry.


Crystals ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 1590
Author(s):  
Xuefei Li ◽  
Jianming Xu ◽  
Tieshi Wei ◽  
Wenxian Yang ◽  
Shan Jin ◽  
...  

The extended wavelength InGaAs material (2.3 μm) was prepared by introducing compositionally undulating step-graded InAsyP1−y buffers with unequal layer thickness grown by solid-source molecular beam epitaxy (MBE). The properties of the extended wavelength InGaAs layer were investigated. The surface showed ordered crosshatch morphology and a low roughness of 1.38 nm. Full relaxation, steep interface and less than one threading dislocation in the InGaAs layer were demonstrated by taking advantage of the strain compensation mechanism. Room temperature photoluminescence (PL) exhibited remarkable intensity attributed to the lower density of deep non-radiative centers. The emission peak energy with varied temperatures was in good agreement with Varshni’s empirical equation, implying high crystal quality without inhomogeneity-induced localized states. Therefore, our work shows that compositionally undulating step-graded InAsP buffers with a thinner bottom modulation layer, grown by molecular beam epitaxy, is an effective approach to prepare InGaAs materials with wavelengths longer than 2.0 μm and to break the lattice limitation on the materials with even larger mismatch.


Materials ◽  
2021 ◽  
Vol 14 (21) ◽  
pp. 6699
Author(s):  
Shih-Ming Huang ◽  
Mu-Jen Lai ◽  
Rui-Sen Liu ◽  
Tsung-Yen Liu ◽  
Ray-Ming Lin

In this study, we suppressed the parasitic emission caused by electron overflow found in typical ultraviolet B (UVB) and ultraviolet C (UVC) light-emitting diodes (LEDs). The modulation of the p-layer structure and aluminum composition as well as a trade-off in the structure to ensure strain compensation allowed us to increase the p-AlGaN doping efficiency and hole numbers in the p-neutral region. This approach led to greater matching of the electron and hole numbers in the UVB and UVC emission quantum wells. Our UVB LED (sample A) exhibited clear exciton emission, with its peak near 306 nm, and a band-to-band emission at 303 nm. The relative intensity of the exciton emission of sample A decreased as a result of the thermal energy effect of the temperature increase. Nevertheless, sample A displayed its exciton emission at temperatures of up to 368 K. In contrast, our corresponding UVC LED (sample B) only exhibited a Gaussian peak emission at a wavelength of approximately 272 nm.


2021 ◽  
Author(s):  
Shikhar Misra ◽  
Haiyan Wang

This review summarizes the recent progress in self-assembled oxide-metal nanocomposites, their design criteria using the in-plane strain compensation model, functionalities, and the coupling between electrical, magnetic and optical properties


2020 ◽  
Vol 10 (43) ◽  
pp. 2002004
Author(s):  
Cuiling Zhang ◽  
Shaohang Wu ◽  
Leiming Tao ◽  
Gowri Manohari Arumugam ◽  
Chong Liu ◽  
...  

2020 ◽  
pp. 2000661
Author(s):  
Ping Hu ◽  
Quan Cheng ◽  
Shilei Li ◽  
Hairui Xing ◽  
Jiayu Han ◽  
...  

2020 ◽  
Vol 524 ◽  
pp. 146573 ◽  
Author(s):  
Tarek Hidouri ◽  
Samia Nasr ◽  
Indranil Mal ◽  
D.P. Samajdar ◽  
Faouzi Saidi ◽  
...  

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