scholarly journals Phase Boundary Mapping in ZrNiSn Half-Heusler for Enhanced Thermoelectric Performance

Research ◽  
2020 ◽  
Vol 2020 ◽  
pp. 1-9 ◽  
Author(s):  
Xiaofang Li ◽  
Pengbo Yang ◽  
Yumei Wang ◽  
Zongwei Zhang ◽  
Dandan Qin ◽  
...  

The solubility range of interstitial Ni in the ZrNi1+xSn half-Heusler phase is a controversial issue, but it has an impact on the thermoelectric properties. In this study, two isothermal section phase diagrams of the Zr-Ni-Sn ternary system at 973 K and 1173 K were experimentally constructed based on the binary phase diagrams of Zr-Ni, Zr-Sn, and Ni-Sn. The thermodynamic equilibrium phases were obtained after a long time of heating treatment on the raw alloys prepared by levitation melting. Solubilities of x<0.07 at 973 K and x<0.13 at 1173 K were clearly indicated. An intermediate-Heusler phase with a partly filled Ni void was observed, which is believed to be beneficial to the lowered lattice thermal conductivity. The highest ZT value~0.71 at 973 K was obtained for ZrNi1.11Sn1.04. The phase boundary mapping provides an important instruction for the further optimization of ZrNiSn-based materials and other systems.

Author(s):  
Rachel Orenstein ◽  
James P. Male ◽  
Michael Toriyama ◽  
Shashwat Anand ◽  
G. Jeffrey Snyder

A new understanding of the MgSi–MgSn miscibility gap is reached through phase boundary mapping the Mg–Si–Sn ternary phase diagram.


2006 ◽  
Vol 124 (22) ◽  
pp. 224902 ◽  
Author(s):  
Pratyush Dayal ◽  
Rushikesh A. Matkar ◽  
Thein Kyu

2019 ◽  
Vol 7 (2) ◽  
pp. 621-631 ◽  
Author(s):  
Brenden R. Ortiz ◽  
Kiarash Gordiz ◽  
Lídia C. Gomes ◽  
Tara Braden ◽  
Jesse M. Adamczyk ◽  
...  

Phase boundary mapping in Cu2HgGeTe4allows discovery of Hg2GeTe4and further enables carrier density control over 4 orders of magnitude.


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