scholarly journals Analysis of the results of designing reading electronics of silicon photomultiplier tubes driven by the base matrix crystal MN2XA030

Doklady BGUIR ◽  
2020 ◽  
Vol 18 (3) ◽  
pp. 81-87
Author(s):  
O. V. Dvornikov ◽  
V. A. Tchekhovski ◽  
Ya. D. Galkin ◽  
A. V. Kunts ◽  
V. R. Stempitski ◽  
...  
Keyword(s):  
Photomultiplier Tubes ◽  
Silicon Photomultiplier ◽  
Matrix Crystal ◽  
Base Matrix

Investigation of Dynamic Range of Silicon Photoelectronic Multiplyers

2021 ◽  
Vol 26 (1) ◽  
pp. 30-39
Author(s):  
A.O. Zenevich ◽  
◽  
O.V. Kochergina ◽  
Keyword(s):  
Optical Radiation ◽  
Dynamic Range ◽  
Supply Voltage ◽  
Threshold Intensity ◽  
Photomultiplier Tubes ◽  
Silicon Photomultiplier ◽  
Low Intensity

For detecting the low-intensity optical radiation the silicon photoelectronic multiplyers are used more often. However, not all characteristics of these photoelectronic multiplyers have been thoroughly studied. So, there is no information about the influence of supply voltage on the value of the dynamic range. In the work as the study objects, the test specimens Si-PEM with a p+–p–n+ structure, produced by JSC Integral (Republik of Belarus), have been used, as well as the serially produced silicon photomultiplyers Ketek PM 3325 and ON Semi FC 30035. It has been found that an increase in the supply voltage leads to the critical decrease. It has been discovered that an increase an in the supply voltage leads to a decreased value of the threshold intensity. It has been proved that the dependence of the dynamic range on the supply voltage has a maximum. To ensure the maximum dynamic range of registration in the photo-detector devices based on the Si-photomultiplier tubes, it is necessary to select the photo-detector supply voltage, corresponding to this maximum. The results obtained in this article can be applied in the development and design of the devices for recording the optical radiation based on silicon photomultiplier tubes.

scholarly journals Influence of optical radiation parameters on the amplitude characteristics of silicon photoelectron multipliers

2020 ◽  
Vol 65 (1) ◽  
pp. 104-109
Author(s):  
M. A. Asayonak ◽  
A. O. Zenevich ◽  
Ya. V. Novikau ◽  
S. A. Saroca
Keyword(s):  
Linear Dependence ◽  
Optical Radiation ◽  
Optical Pulse ◽  
Near Infrared ◽  
Amplitude Distribution ◽  
Optical Pulses ◽  
Average Amplitude ◽  
Photomultiplier Tubes ◽  
Silicon Photomultiplier ◽  
Infrared Spectral

At present, silicon photoelectronic multipliers with a low voltage, high sensitivity in the visible and near infrared spectral regions, and large amplification factors are often used to record optical radiation in a wide range of intensities of the visible and near infrared spectral regions. The purpose of this article is to determine the dependence of the type of amplitude distribution of pulses, created by silicon photoelectronic multipliers, on the intensity of the recorded optical radiation. As research objects, commercially available Ketek PM 3325 and ON Semi FC 30035 silicon photomultiplier tubes have been used, as well as multipliers from a pilot batch manufactured by OJSC “INTEGRAL” (Republic of Belarus). The paper studies the amplitude distribution of voltage pulses, formed on the load resistor of silicon photoelectronic multipliers by the photocurrent for various values of the energy exposure of optical pulses. The range of values of the energy exposure of optical pulses was determined at which the amplitude distributions of these pulses have pronounced peaks. It was found out that with increasing energy exposure of the optical pulse, part of the peaks disappears. It was established that all the dependencies of the average amplitude of such pulses on the magnitude of the energy exposure of the optical pulse for silicon photomultiplier tubes have a linear section. The performed experimental studies showed that an increase in the energy exposure of optical pulses results in an increase in the dispersion of the amplitude distribution of pulses. It was found that for a linear dependence of the energy exposure of the optical pulse on the optical pulse duration in the range from 50 ns to 1 μs, the studied silicon photoelectronic multipliers formed voltage pulses of 1 μs duration with the same rising and falling edges. In this case, the average amplitude of these pulses had a linear dependence on the duration of the optical pulse. The results can be used in design of photodetector devices for monitoring the level of ionization radiation for nuclear power plants, for quantum information systems and in optical communications for transmitting information with monitoring the presence of information leakage channels.

DESIGN FEATURES OF MICROCIRCUITS BASIC ELEMENTS FOR SPACE

2020 ◽  
Vol 13 (3) ◽  
pp. 66-70
Author(s):  
Vladimir Zolnikov ◽  
Tatyana Skvortsova ◽  
I. Strukov ◽  
Anna Ilunina ◽  
Elena Maklakova
Keyword(s):  
Cmos Technology ◽  
Signal Delay ◽  
Design Features ◽  
Matrix Crystal ◽  
Base Matrix

The article describes a microcircuit intended for certification of CMOS technology for the production of RS LSI on SPS structures. Its general and technical characteristics are considered. The description and substantiation of the construction, which unites variables by switching layers, allows to implement library elements. The library of elements of the base matrix crystal is considered: its composition and development features. Formulas for calculating the signal delay by the bistable method and estimating the duration of the front of the response of an element at its output are given.

Portable Gamma-Ray Spectrometer for High Intensity Beam Measuring

2015 ◽  
Vol 1084 ◽  
pp. 162-167
Author(s):  
Artem Vukolov ◽  
Aleksey Gogolev ◽  
Yury Cherepennikov ◽  
Andrey Ogrebo ◽  
Alexander Egioya
Keyword(s):  
High Intensity ◽  
Gamma Ray ◽  
Applied Physics ◽  
Photomultiplier Tubes ◽  
Silicon Photomultiplier ◽  
Ray Optics ◽  
X Ray ◽  
Gamma Ray Spectrometer

The paper presents the development of the Laboratory "X-ray Optics" of the Institute of Applied Physics and Technology of Tomsk Polytechnic University, a portable gamma-ray spectrometer, which dimensions are 50×20×30 mm. The device is able to count and analyze gamma quanta with energies from hundreds of keV up to units of MeV with loading up to 109 pulses/min. The problem has been solved by improving the known scintillation counters, using modern silicon photomultiplier tubes, selecting the optimal scintillators and developing original electronic scaler.

Recent measurements on the Hamamatsu 13in., R8055, PhotoMultiplier Tubes

2006 ◽  
Vol 567 (2) ◽  
pp. 511-514
Author(s):  
S. Tsagli ◽  
G. Aggouras ◽  
E.G. Anassontzis ◽  
A.E. Ball ◽  
W. Chinowsky ◽  
...  
Keyword(s):  
Photomultiplier Tubes

Silicon photomultiplier receivers and future VLC systems

2020 ◽  
Author(s):  
Wajahat Ali ◽  
Grahame Faulkner ◽  
Zubair Ahmed ◽  
William Matthews ◽  
Dominic O'Brien ◽  
...  
Keyword(s):  
Silicon Photomultiplier

scholarly journals Ultrasensitive On-Field Luminescence Detection Using a Low-Cost Silicon Photomultiplier Device

2021 ◽  
Author(s):  
Maria Maddalena Calabretta ◽  
Laura Montali ◽  
Antonia Lopreside ◽  
Fabio Fragapane ◽  
Francesco Iacoangeli ◽  
...  
Keyword(s):  
Low Cost ◽  
Silicon Photomultiplier ◽  
Luminescence Detection

scholarly journals Development and characterization of an all-in-one gamma probe with auto-peak detection for sentinel lymph node biopsy based on NEMA NU3-2004 standard

2021 ◽  
Author(s):  
Aram Radnia ◽  
Hamed Abdollahzadeh ◽  
Behnoosh Teimourian ◽  
Mohammad Hossein Farahani ◽  
Mohammad Esmaeil Akbari ◽  
...  
Keyword(s):  
Lymph Node ◽  
Sentinel Lymph Node ◽  
Gamma Probe ◽  
Peak Detection ◽  
Cesium Iodide ◽  
Shielding Effectiveness ◽  
Scattering Medium ◽  
Silicon Photomultiplier ◽  
Regional Lymph Nodes ◽  
Handheld Device

Abstract Background A gamma probe is a handheld device used for intraoperative interventions following interstitial injection of a radiotracer to locate regional lymph nodes through the external detection of radiation. This work reports on the design and performance evaluation of a novel fully integrated gamma probe (GammaPen), recently developed by our group. Materials and methods GammaPen is an all-in-one pocket gamma probe with low weight and adequate dimensions, consisting of a detector, a control unit and output all together. The detector module consists of a cylindrical Thallium-activated Cesium Iodide [CsI (Tl)] crystal optically coupled to a Silicon photomultiplier (SiPM), shielded using Tungsten housing on side and back faces. The electronics of the probe consists of two small boards to handle signal processing and analog peak detection tasks. A number of parameters, including probe sensitivity in air/water, spatial resolution in air/water, angular resolution in air/water, and side and back shielding effectiveness, were measured to evaluate the performance of the probe based on NEMA NU3-2004 standards. Results The sensitivity of the probe in air at distances of 10, 30, and 50 mm is 18784, 3500, and 1575 cps/MBq. The sensitivity in scattering medium was also measured at distances of 10, 30, and 50 mm as 17,680, 3050, and 1104 cps/MBq. The spatial and angular resolutions in scattering medium were 47 mm and 87 degree at 30 mm distance from the probe, while they were 40 mm and 77 degree in air. The detector shielding effectiveness and leakage sensitivity are 99.91% and 0.09%, respectively. Conclusion The performance characterization showed that GammaPen can be used effectively for sentinel lymph node localization. The probe was successfully used in several surgical interventions by an experienced surgeon confirming its suitability in a clinical setting.

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