scholarly journals Temperature resistance coefficient of doped with rare earth elements nanostructured silicon films

Doklady BGUIR ◽  
2021 ◽  
Vol 19 (7) ◽  
pp. 99-105
Author(s):  
A. S. Strogova
Keyword(s):  
Rare Earth ◽  
Rare Earth Elements ◽  
Temperature Coefficient ◽  
Silicon Film ◽  
Resistance Coefficient ◽  
Silicon Films ◽  
Temperature Coefficient Of Resistance ◽  
Nanostructured Silicon ◽  
Temperature Resistance Coefficient ◽  
Formation Conditions

The regularities of changes in the concentration of an electrically active dopant in a nanostructured silicon film by changing the electrical resistivity depending on the doping conditions were investigated. The dependences of the changes in the obtained structures doped with rare-earth elements, such as La, Eu, Sm, Dy, Gd (lanthanides), on nanostructured silicon films are determined. The regularities of the obtained films changes and the temperature coefficient of resistance (TCR) change depending on the formation conditions are established. The regularities of the TCR are shown depending on the selected conditions for doping or non-doping of nanostructured silicon films with various impurities. It is shown that the main conditions under which the effect and change in the temperature coefficient of resistors resistance on thin films using rare-earth elements, such as oxygen, boron and phosphorus in the bulk of the film, is considered to be the temperature effect after deposition.

New nanostructured silicon films grown by PECVD technique under controlled powder formation conditions

Solar Energy ◽  
2001 ◽  
Vol 69 ◽  
pp. 263-269 ◽  
Author(s):  
R. Martins ◽  
H. Águas ◽  
A. Cabrita ◽  
P. Tonello ◽  
V. Silva ◽  
...  
Keyword(s):  
Silicon Films ◽  
Nanostructured Silicon ◽  
Powder Formation ◽  
Formation Conditions

High specific surface 1-(2-pyridylazo) 2-naphthol (PAN) modified Carbon-based silicon film with cellulose nanocrystalline structure for efficient adsorption of rare earth elements

2021 ◽  
Author(s):  
Bin Wang ◽  
Yuzhe Zhang ◽  
Wen Sun ◽  
Xudong Zheng ◽  
Zhongyu Li
Keyword(s):  
Rare Earth ◽  
Rare Earth Elements ◽  
Specific Surface ◽  
Cellulose Nanocrystals ◽  
Silicon Film ◽  
Nanocrystalline Structure ◽  
Heavy Rare Earth ◽  
Beneficial Result ◽  
Waste Products ◽  
Heavy Rare Earth Elements

The recovery of rare earth elements, especially heavy rare earth elements, from rare earth waste products has a high economic and environmental beneficial result. In this paper, cellulose nanocrystals used...

BRIGHTRAY ALLOY B

Alloy Digest ◽  
1988 ◽  
Vol 37 (9) ◽  
Keyword(s):  
Rare Earth ◽  
High Temperature ◽  
Physical Properties ◽  
Temperature Coefficient ◽  
Electrical Resistance ◽  
Temperature Coefficient Of Resistance ◽  
Nickel Chromium ◽  
Temperature Performance ◽  
Long Life ◽  
Chromium Resistance

Abstract BRIGHTRAY Alloy B is an electrical resistance wire which contains rare-earth long-life additions. It is useful up to 1100 C (2010 F). It has a greater temperature coefficient of resistance than the essentially binary 80/20 nickel chromium resistance grade. It is suitable for less exacting applications. This datasheet provides information on composition, physical properties, and tensile properties. It also includes information on low and high temperature performance. Filing Code: Ni-362. Producer or source: Inco Alloys International Inc..

scholarly journals Alloys of the Cr–Ni–Si system for obtaining resistive elements of integrated microcircuits by magnetron sputtering

2020 ◽  
Vol 65 (1) ◽  
pp. 35-42
Author(s):  
A. T. Volochko ◽  
V. A. Zelenin ◽  
N. Yu. Melnik
Keyword(s):  
Rare Earth ◽  
Magnetron Sputtering ◽  
Temperature Coefficient ◽  
Melting Temperature ◽  
Sheet Resistivity ◽  
Temperature Coefficient Of Resistance ◽  
Rare Earth La

This article presents the results of the study of the effect of annealing on the sheet resistivity and temperature coefficient of resistance (TCR) of resistive films obtained from targets of the Cr–Ni–Si system using magnetron sputtering. A diagram of the composition–sheet resistivity of the Cr–Ni–Si system films with a thickness of 100 nm is proposed. It was established that resistive films of the Cr–Ni–Si system deposited by magnetron sputtering on silicon semiconductor plates with a SiO2 sublayer with a thickness of 100 nm, have sheet resistivity up to 350 Ω/square. It is shown that it is necessary to determine their eutectic compositions for the manufacture of targets by casting. Calculations were carried out and it was established that eutectics of the Cr–Ni–Si system contain 36.4 and 38.5 at.% Ni, which is 4 to 6 times higher than in the PC series alloys of this system. Due to the high content of Ni sheet resistivity films of eutectic compositions with a thickness of 100 nm is in the range from 100 to 200 Ω/square. It was noted that it is necessary to develop new four-five-component alloys based on the Cr–Ni–Si system with the introduction of refractory (Mo, Nb) and rare-earth (La, Y) elements into it, in order to increase the sheet resistivity of films and to decrease the melting temperature of alloys.

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