Effect of Deposition Voltage on Layer Thickness, Microstructure, Cu/Ni Sheet Resistivity of Deposition Results by Magnetic Field Electroplating Assisted Technique

The purpose of this research is to make the Cu/Ni thin layer as an alternative to basic RTD materials through electroplating methods assisted by magnetic fields. Electroplating was carried out with variation in deposition voltage ranging from 1 to 5 V. The results of this study indicate that the deposition voltage applied to the coating affects the thickness, sheet resistivity, and microstructure of the coating. Thickness increases with increasing deposition voltage. The diffraction intensity and crystal size tend to increase with increasing deposition voltage. The distance between Bragg planes after the coating is almost equal for all samples. The highest sheet resistivity was obtained in the coating sample with a 4-volt deposition voltage.

Alloys of the Cr–Ni–Si system for obtaining resistive elements of integrated microcircuits by magnetron sputtering

This article presents the results of the study of the effect of annealing on the sheet resistivity and temperature coefficient of resistance (TCR) of resistive films obtained from targets of the Cr–Ni–Si system using magnetron sputtering. A diagram of the composition–sheet resistivity of the Cr–Ni–Si system films with a thickness of 100 nm is proposed. It was established that resistive films of the Cr–Ni–Si system deposited by magnetron sputtering on silicon semiconductor plates with a SiO2 sublayer with a thickness of 100 nm, have sheet resistivity up to 350 Ω/square. It is shown that it is necessary to determine their eutectic compositions for the manufacture of targets by casting. Calculations were carried out and it was established that eutectics of the Cr–Ni–Si system contain 36.4 and 38.5 at.% Ni, which is 4 to 6 times higher than in the PC series alloys of this system. Due to the high content of Ni sheet resistivity films of eutectic compositions with a thickness of 100 nm is in the range from 100 to 200 Ω/square. It was noted that it is necessary to develop new four-five-component alloys based on the Cr–Ni–Si system with the introduction of refractory (Mo, Nb) and rare-earth (La, Y) elements into it, in order to increase the sheet resistivity of films and to decrease the melting temperature of alloys.

Electrical stimulation of cell growth and neurogenesis using conductive and nonconductive microfibrous scaffolds

The effect of exogenous electrical stimulation on cell viability, attachment, growth, and neurogenesis was examined using PC12 cells in microfibrous viscose-rayon scaffolds immersed in culture medium. The scaffolds were applied either in their nonconductive state or after coating the fibres with 200 nm of gold to give a scaffold sheet resistivity of (13 ± 1.3) Ω square−1. The cells were treated for 12 days using direct current electrical stimulation of 2 h per day. No cytotoxic effects were observed when up to 500 mV (8.3 mV mm−1) was applied to the scaffolds without gold, or when up to 100 mV (1.7 mV mm−1) was applied to the scaffolds with gold. Compared with unstimulated cells, whereas electrical stimulation significantly enhanced cell growth and attachment in the nonconductive scaffolds without gold, similar effects were not found for the conductive scaffolds with gold. Neural differentiation in the presence of nerve growth factor was improved by electrical stimulation in both scaffolds; however, neurite development and the expression of key differentiation markers were greater in the nonconductive scaffolds without gold than in the scaffolds with gold. Application of the same current to scaffolds with and without gold led to much higher levels of neurogenesis in the scaffolds without gold. This work demonstrates that substantial benefits in terms of cell growth and neural differentiation can be obtained using electric fields exerted across nonconductive microfibrous scaffolds, and that this approach to electrical stimulation can be more effective than when the stimulus is applied to cells on conductive scaffolds.

The role and importance of surface modification of polyester fabrics by chitosan and hexadecylpyridinium chloride for the electrical and electro-thermal performance of graphene-modified smart textiles

Surface charge modification of textiles resulting a graphene-modified smart textile with a low sheet resistivity of 0.6 kΩ □−1 for electro-thermal heater applications.

Fabrication of PEDOT:PSS/Graphene Conductive Ink Printed on Flexible Substrate

Nowadays, flexible electronic is an important technology to produce flexible electronic devices due to it offers the attractive features such as possibility of product types and designs, with reducing size and weight, and low cost. Poly (3,4-ethelenedioxythiophene):poly (stylenesulfonate) (PEDOT:PSS) is a conductive polymer which possess high conductivity, high electrochemical, and low redox potential. PEDOT:PSS and PEDOT:PSS/Graphene (GP)/Dimethyl sulfoxide (DMSO) conductive ink ware deposited on Polyethylene terephthalate (PET) flexible substrate using desktop inkjet printer. Conductivity and thickness of conductive pattern at 1, 3, 5, 10, 20 layers were investigated in this study. It is observed that sheet resistivity of the conductive pattern is influenced by number of printed layers. Addition of GP at 20 layers of PEDOT:PSS/GP/DMSO conductive pattern exhibits the lowest sheet resistivity at 44 ohm/󠇯󠇯sq compared to PEDOT:PSS conductive pattern of 1.81×104 ohm/󠇯󠇯sq.