Stable Q-switched mode-locking of Er:YAG ceramic laser at 1645 nm using a semiconductor saturable absorber

2020 ◽  
Vol 59 (7) ◽  
pp. 072003
Author(s):  
J. W. Tang ◽  
R. Xu ◽  
W. C. Yao ◽  
W. Zhou ◽  
J. Wang ◽  
...  
Keyword(s):  
Saturable Absorber ◽  
Mode Locking ◽  
Semiconductor Saturable Absorber ◽  
Ceramic Laser

scholarly journals Stable Q-Switched Mode-Locking of 2.7 μm Er:Y2O3 Ceramic Laser Using a Semiconductor Saturable Absorber

2018 ◽  
Vol 8 (7) ◽  
pp. 1155 ◽  
Author(s):  
Hao Xue ◽  
Li Wang ◽  
Wei Zhou ◽  
Haotian Wang ◽  
Jun Wang ◽  
...  
Keyword(s):  
Saturable Absorber ◽  
Average Output Power ◽  
Doping Concentration ◽  
Modulation Depth ◽  
Mode Locking ◽  
Average Output ◽  
Stable Mode ◽  
High Brightness ◽  
Semiconductor Saturable Absorber ◽  
Ceramic Laser

This paper studies synchronous Q-switch and mode-locking of an 2.7 μm Er:Y2O3 ceramic laser pumped with a high brightness 976 nm fiber laser and using a semiconductor saturable absorber mirror. The Er:Y2O3 ceramic is home-developed with Er3+ doping concentration of 7 at.%. The laser generated ~92 mW of average output power with stable mode-locked pulses of 100% modulation depth and 130 MHz repetition rate embedded inside Q-switched envelopes of ~1.2 μs width. Repetition rates of the Q-switched pulse envelopes are tunable from 5.1 kHz to 29 kHz with the width varying from 2.7 μs to 1.2 μs.

GaSb-based semiconductor saturable absorber mirrors for mode-locking 2 µm semiconductor disk lasers

2011 ◽  
Vol 9 (2) ◽  
pp. 294-297 ◽  
Author(s):  
Jonna Paajaste ◽  
Soile Suomalainen ◽  
Riku Koskinen ◽  
Antti Härkönen ◽  
Günter Steinmeyer ◽  
...  
Keyword(s):  
Saturable Absorber ◽  
Mode Locking ◽  
Semiconductor Saturable Absorber

HIGHLY FE-DOPED InGaAs/InP SATURABLE ABSORBER MODE-LOCKING OF AN ERBIUM FIBER LASER

2005 ◽  
Vol 14 (03) ◽  
pp. 427-437 ◽  
Author(s):  
J.-B. LECOURT ◽  
B. ORTAÇ ◽  
M. GUÉZO ◽  
C. LABBÉ ◽  
H. FOLLIOT ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Saturable Absorber ◽  
Mode Locking ◽  
Multiple Quantum ◽  
Average Output ◽  
Picosecond Pulses ◽  
Inp Substrate ◽  
Semiconductor Saturable Absorber ◽  
Erbium Doped ◽  
Maximum Average Output Power

Erbium-doped unidirectional fiber ring laser has been passively mode-locked with a novel ultra-fast semiconductor saturable absorber used in transmission. The structure is based on InGaAs/InP multiple quantum wells grown on an InP substrate. Different structures with recovery time down to picosecond have been tested. Relaxation time reduction have been obtained by iron doping. With such structures, detrimental regimes such as Q-switch and Q-switch/ModeLock regimes have been avoided. Solitonic and slightly stretched-pulse dispersion regimes have been tested. The laser delivers for both, completely self-starting picosecond pulses of 8 mW maximum average output power at a repetition rate around 25 MHz.

Analysis of Pulse Dynamics for Passive Mode Locking with Dual Semiconductor Saturable Absorber Mirrors

2013 ◽  
Vol 40 (6) ◽  
pp. 0602002
Author(s):  
韩克祯 Han Kezhen ◽  
侯佳 Hou Jia ◽  
杨克建 Yang Kejian ◽  
张百涛 Zhang Baitao ◽  
何京良 He Jingliang
Keyword(s):  
Saturable Absorber ◽  
Mode Locking ◽  
Passive Mode ◽  
Pulse Dynamics ◽  
Semiconductor Saturable Absorber
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