scholarly journals Stable Q-Switched Mode-Locking of 2.7 μm Er:Y2O3 Ceramic Laser Using a Semiconductor Saturable Absorber

2018 ◽  
Vol 8 (7) ◽  
pp. 1155 ◽  
Author(s):  
Hao Xue ◽  
Li Wang ◽  
Wei Zhou ◽  
Haotian Wang ◽  
Jun Wang ◽  
...  
Keyword(s):  
Saturable Absorber ◽  
Average Output Power ◽  
Doping Concentration ◽  
Modulation Depth ◽  
Mode Locking ◽  
Average Output ◽  
Stable Mode ◽  
High Brightness ◽  
Semiconductor Saturable Absorber ◽  
Ceramic Laser

This paper studies synchronous Q-switch and mode-locking of an 2.7 μm Er:Y2O3 ceramic laser pumped with a high brightness 976 nm fiber laser and using a semiconductor saturable absorber mirror. The Er:Y2O3 ceramic is home-developed with Er3+ doping concentration of 7 at.%. The laser generated ~92 mW of average output power with stable mode-locked pulses of 100% modulation depth and 130 MHz repetition rate embedded inside Q-switched envelopes of ~1.2 μs width. Repetition rates of the Q-switched pulse envelopes are tunable from 5.1 kHz to 29 kHz with the width varying from 2.7 μs to 1.2 μs.

Q-switched mode locking of a fiber laser resonantly pumped Er:YAG ceramic laser at 1645 nm using graphene as saturable absorber

2015 ◽  
Vol 24 (01) ◽  
pp. 1550001 ◽  
Author(s):  
Haitao Huang ◽  
Deyuan Shen ◽  
Jian Zhang ◽  
Dingyuan Tang
Keyword(s):  
Fiber Laser ◽  
Output Power ◽  
Saturable Absorber ◽  
Average Output Power ◽  
Repetition Rate ◽  
Mode Locking ◽  
Average Output ◽  
Q Switching ◽  
Ceramic Laser ◽  
Switching Mode

A fiber laser resonantly pumped Q-switched mode locked Er :YAG ceramic 1645 nm laser using graphene as the saturable absorber is realized. The mode-locked pulses with average output power of 320 mW, Q-switching envelope temporal width of 10 μs and mode-locking repetition rate of 83 MHz can readily be generated from the laser. To the best of our knowledge, this is the first report on the graphene-based Q-switching mode locked Er :YAG ceramic laser emitting around 1645 nm.

HIGHLY FE-DOPED InGaAs/InP SATURABLE ABSORBER MODE-LOCKING OF AN ERBIUM FIBER LASER

2005 ◽  
Vol 14 (03) ◽  
pp. 427-437 ◽  
Author(s):  
J.-B. LECOURT ◽  
B. ORTAÇ ◽  
M. GUÉZO ◽  
C. LABBÉ ◽  
H. FOLLIOT ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Saturable Absorber ◽  
Mode Locking ◽  
Multiple Quantum ◽  
Average Output ◽  
Picosecond Pulses ◽  
Inp Substrate ◽  
Semiconductor Saturable Absorber ◽  
Erbium Doped ◽  
Maximum Average Output Power

Erbium-doped unidirectional fiber ring laser has been passively mode-locked with a novel ultra-fast semiconductor saturable absorber used in transmission. The structure is based on InGaAs/InP multiple quantum wells grown on an InP substrate. Different structures with recovery time down to picosecond have been tested. Relaxation time reduction have been obtained by iron doping. With such structures, detrimental regimes such as Q-switch and Q-switch/ModeLock regimes have been avoided. Solitonic and slightly stretched-pulse dispersion regimes have been tested. The laser delivers for both, completely self-starting picosecond pulses of 8 mW maximum average output power at a repetition rate around 25 MHz.

Stable Q-switched mode-locking of Er:YAG ceramic laser at 1645 nm using a semiconductor saturable absorber

2020 ◽  
Vol 59 (7) ◽  
pp. 072003
Author(s):  
J. W. Tang ◽  
R. Xu ◽  
W. C. Yao ◽  
W. Zhou ◽  
J. Wang ◽  
...  
Keyword(s):  
Saturable Absorber ◽  
Mode Locking ◽  
Semiconductor Saturable Absorber ◽  
Ceramic Laser

scholarly journals Bright Soliton and Bright–Dark Soliton Pair in an Er-Doped Fiber Laser Mode-Locked Based on In2Se3 Saturable Absorber

2021 ◽  
Vol 9 ◽  
Author(s):  
Qin Wei ◽  
Xile Han ◽  
Huanian Zhang ◽  
Chonghui Li ◽  
Chao Zhang ◽  
...  
Keyword(s):  
Fiber Laser ◽  
Output Power ◽  
Saturable Absorber ◽  
High Power ◽  
Fiber Lasers ◽  
Physical Vapor Deposition ◽  
Modulation Depth ◽  
Polarization State ◽  
Average Output ◽  
Stable Mode

The output power in ultrafast fiber lasers is usually limited due to the lack of a versatile saturable absorber with high damage threshold and large modulation depth. Here we proposed a more efficient strategy to improve the output energy of erbium-doped fiber laser based on indium selenide (In2Se3) prepared by using the physical vapor deposition (PVD) method. Finally, stable mode-locked bright pulses and triple-wavelength dark–bright pulse pair generation were obtained successfully by adjusting the polarization state. The average output power and pulse energy were 172.4 mW/101 nJ and 171.3 mW/100 nJ, which are significantly improved compared with the previous work. These data demonstrate that the PVD-In2Se3 can be a feasible nonlinear photonic material for high-power fiber lasers, which will pave a fresh avenue for the high-power fiber laser.

Stable continuous-wave mode-locked laser from a 1645 nm Er:YAG ceramic oscillator

2022 ◽  
Author(s):  
Yangyu Liu ◽  
Xue Cao ◽  
AnHua Xian ◽  
Guangmiao Liu ◽  
Wei zhou ◽  
...  
Keyword(s):  
Solid State ◽  
Pulse Width ◽  
Peak Power ◽  
Continuous Wave ◽  
Modulation Depth ◽  
Average Power ◽  
Mode Locking ◽  
Wave Mode ◽  
Semiconductor Saturable Absorber ◽  
Continuous Wave Mode

Abstract We demonstrate stable continuous-wave mode-locking (CWML) pulses around 1645nm by employing the home-made Er:YAG ceramic. By using a fiber laser and semiconductor saturable absorber mirror (SESAM) with modulation depth of 1.2%, we get ML pulses with the output average power up to 815 mW, the pulse width shortened as ~4 ps, and the peak power of 1.8 kW. With the SESAM of modulation depth of 2.4%, the second-order harmonic ML pulses were also obtained. As far as we know, this is the first report of CWML from Er3+-doped ceramics and also the shortest pulse duration in Er3+-doped solid-state oscillators.

scholarly journals Continuous-Wave and Passively Q-Switched Er:Y2O3 Ceramic Laser at 2.7 μm

2018 ◽  
Vol 2018 ◽  
pp. 1-5 ◽  
Author(s):  
Zhipeng Qin ◽  
Guoqiang Xie ◽  
Jian Zhang ◽  
Jingui Ma ◽  
Peng Yuan ◽  
...  
Keyword(s):  
Output Power ◽  
Continuous Wave ◽  
Maximum Output Power ◽  
Maximum Output ◽  
Average Output ◽  
Semiconductor Saturable Absorber ◽  
Infrared Spectral ◽  
Maximum Average Output Power ◽  
Ceramic Laser ◽  
Stable Passive

We report on a continuous-wave (CW) and passively Q-switched Er:Y2O3 ceramic laser in mid-infrared spectral region. In the CW regime, a maximum output power of 2.07 W is achieved at 2717.3 nm with a slope efficiency of 13.5%. Stable passive Q-switching of the Er:Y2O3 ceramic laser is demonstrated based on semiconductor saturable absorber mirror. Under an absorbed pump power of 12.4 W, a maximum average output power of 223 mW is generated with a pulse energy of 1.7 μJ and a pulse width of 350 ns at 2709.3 nm.

scholarly journals Epsilon-near-zero medium for optical switches in a monolithic waveguide chip at 1.9 μm

Nanophotonics ◽  
2018 ◽  
Vol 7 (11) ◽  
pp. 1835-1843 ◽  
Author(s):  
Xiantao Jiang ◽  
Huiling Lu ◽  
Qian Li ◽  
Hang Zhou ◽  
Shengdong Zhang ◽  
...  
Keyword(s):  
Saturable Absorber ◽  
Indium Tin Oxide ◽  
Optical Switches ◽  
Oxide Semiconductor ◽  
Optical Losses ◽  
Average Output ◽  
Stable Mode ◽  
High Modulation ◽  
Cmos Compatible ◽  
Epsilon Near Zero

AbstractA saturable absorber is a building block for integrated ultrafast photonics and passive optical circuits. However, options currently available suffer from the bottlenecks of the necessity for fine control of the material preparation, large optical losses, and compatibility. This paper presents a complementary metal–oxide–semiconductor (CMOS)-compatible alternative based on an epsilon-near-zero (ENZ) medium, in which the real part of the dielectric constant vanishes. Excellent nonlinear optical modulations, including low linear optical losses, low bleaching threshold, moderate optical amplitude modulation, and high modulation speed of indium tin oxide (ITO) in its ENZ region are achieved. The use of ITO as an intracavity saturable absorber for optical switches of integrated waveguide chip lasers at 1.9 μm has been realized. A stable mode-locked waveguide laser with a repetition rate of 6.4 GHz and an average output power of 28.6 mW is achieved via carefully adjusting the intracavity three-surface interferometer (TSI). This work may pave the way for integrated photonics and electro-optics using a CMOS-compatible ENZ medium.

GaSb-based semiconductor saturable absorber mirrors for mode-locking 2 µm semiconductor disk lasers

2011 ◽  
Vol 9 (2) ◽  
pp. 294-297 ◽  
Author(s):  
Jonna Paajaste ◽  
Soile Suomalainen ◽  
Riku Koskinen ◽  
Antti Härkönen ◽  
Günter Steinmeyer ◽  
...  
Keyword(s):  
Saturable Absorber ◽  
Mode Locking ◽  
Semiconductor Saturable Absorber
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