Stable continuous-wave mode-locked laser from a 1645 nm Er:YAG ceramic oscillator

We demonstrate stable continuous-wave mode-locking (CWML) pulses around 1645nm by employing the home-made Er:YAG ceramic. By using a fiber laser and semiconductor saturable absorber mirror (SESAM) with modulation depth of 1.2%, we get ML pulses with the output average power up to 815 mW, the pulse width shortened as ~4 ps, and the peak power of 1.8 kW. With the SESAM of modulation depth of 2.4%, the second-order harmonic ML pulses were also obtained. As far as we know, this is the first report of CWML from Er3+-doped ceramics and also the shortest pulse duration in Er3+-doped solid-state oscillators.

SESAM Mode-Locked Yb:Ca3Gd2(BO3)4 Femtosecond Laser

We report on the first passively mode-locked femtosecond-laser operation of a disordered Yb:Ca3Gd2(BO3)4 crystal using a SEmiconductor Saturable Absorber Mirror (SESAM). Pumping with a single-transverse mode fiber-coupled laser diode at 976 nm, nearly Fourier-transform-limited pulses as short as 96 fs are generated at 1045 nm with an average output power of 205 mW and a pulse repetition rate of ~67.3 MHz. In the continuous-wave regime, high slope efficiency up to 59.2% and low laser thresholds down to 25 mW are obtained. Continuous wavelength tuning between 1006–1074 nm (a tuning range of 68 nm) is demonstrated. Yb:Ca3Gd2(BO3)4 crystals are promising for the development of ultrafast lasers at ~1 μm.

Diode-pumped 10 W femtosecond Yb:CALGO laser with high beam quality

We demonstrate a diode-pumped femtosecond Yb:CaGdAlO4 (Yb:CALGO) laser with a semiconductor saturable absorber mirror (SESAM) for stable mode-locking operation. A perfect beam profile is measured under 10 W output power with $M_{x}^{2}$ = 1.017 and $M_{y}^{2}$ = 1.016 in the horizontal and vertical directions, respectively. At the repetition rate of 71.66 MHz, the optical pulse duration is 247 fs and the pulse energy is 140 nJ at the central wavelength of 1041 nm, corresponding to a peak power of 0.56 MW. In addition, we also generate continuous wave (CW) power of more than 15 W with TEM00 mode, corresponding to an optical-to-optical efficiency of 44.1%.

High-Quality, InN-Based, Saturable Absorbers for Ultrafast Laser Development

New fabrication methods are strongly demanded for the development of thin-film saturable absorbers with improved optical properties (absorption band, modulation depth, nonlinear optical response). In this sense, we investigate the performance of indium nitride (InN) epitaxial layers with low residual carrier concentration (<1018 cm−3), which results in improved performance at telecom wavelengths (1560 nm). These materials have demonstrated a huge modulation depth of 23% and a saturation fluence of 830 µJ/cm2, and a large saturable absorption around −3 × 104 cm/GW has been observed, attaining an enhanced, nonlinear change in transmittance. We have studied the use of such InN layers as semiconductor saturable absorber mirrors (SESAMs) for an erbium (Er)-doped fiber laser to perform mode-locking generation at 1560 nm. We demonstrate highly stable, ultrashort (134 fs) pulses with an energy of up to 5.6 nJ.