Floral design GaN crystals: low-resistive and low-dislocation-density growth by oxide vapor phase epitaxy

2021 ◽  
Vol 60 (9) ◽  
pp. 095501
Author(s):  
Junichi Takino ◽  
Tomoaki Sumi ◽  
Yoshio Okayama ◽  
Akira Kitamoto ◽  
Shigeyoshi Usami ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Low Dislocation Density ◽  
Density Growth ◽  
Oxide Vapor

scholarly journals Extreme reduction of on-resistance in vertical GaN p–n diodes by low dislocation density and high carrier concentration GaN wafers fabricated using oxide vapor phase epitaxy method

2020 ◽  
Vol 13 (7) ◽  
pp. 071010
Author(s):  
Junichi Takino ◽  
Tomoaki Sumi ◽  
Yoshio Okayama ◽  
Akira Kitamoto ◽  
Masayuki Imanishi ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Carrier Concentration ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
High Carrier Concentration ◽  
Low Dislocation Density ◽  
High Carrier ◽  
Oxide Vapor

High-quality InGaN MQW on low-dislocation-density GaN substrate grown by hydride vapor-phase epitaxy

1998 ◽  
Vol 189-190 ◽  
pp. 61-66 ◽  
Author(s):  
C Sasaoka ◽  
H Sunakawa ◽  
A Kimura ◽  
M Nido ◽  
A Usui ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
High Quality ◽  
Low Dislocation Density

Fabrication of GaN layer with Low Dislocation Density using Facet controlled ELO technique

2000 ◽  
Vol 639 ◽  
Author(s):  
H. Miyake ◽  
H. Mizutani ◽  
K. Hiramatsu ◽  
Y. Iyechika ◽  
Y. Honda ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Epitaxial Lateral Overgrowth ◽  
Lateral Overgrowth ◽  
Low Dislocation Density ◽  
Window Region

ABSTRACTGaN layers with low dislocation density have been fabricated be means of facet-controlled epitaxial lateral overgrowth (FACELO) via low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). The distribution of the dislocations in FACELO GaN was inspected by observation of InGaN growth pits. For FACELO with {11-20} facets as the first step, the dislocations concentrate only in the window region. For FACELO with {11-22} facets as the first step, the dislocations exist only in the coalescence region. The double FACELO, which was FACELO with {11-20} on FACELO with {11-22}, was demonstrated and dislocation density of less than 105 cm−2 was achieved.

Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy

1997 ◽  
Vol 36 (Part 2, No. 7B) ◽  
pp. L899-L902 ◽  
Author(s):  
Akira Usui ◽  
Haruo Sunakawa ◽  
Akira Sakai ◽  
A. Atsushi Yamaguchi
Keyword(s):  
Dislocation Density ◽  
Epitaxial Growth ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Low Dislocation Density

Dependence of polarity inversion on V/III ratio in −c-GaN growth by oxide vapor phase epitaxy

2016 ◽  
Vol 55 (5S) ◽  
pp. 05FA11 ◽  
Author(s):  
Yuki Taniyama ◽  
Yohei Yamaguchi ◽  
Hiroaki Takatsu ◽  
Tomoaki Sumi ◽  
Akira Kitamoto ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Polarity Inversion ◽  
Oxide Vapor

Drastic Reduction of Dislocation Density in Semipolar (1122) GaN Stripe Crystal on Si Substrate by Dual Selective Metal–Organic Vapor Phase Epitaxy

2011 ◽  
Vol 50 (1S1) ◽  
pp. 01AD04 ◽  
Author(s):  
Tasuku Murase ◽  
Tomoyuki Tanikawa ◽  
Yoshio Honda ◽  
Masahito Yamaguchi ◽  
Hiroshi Amano ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Si Substrate ◽  
Drastic Reduction ◽  
Organic Vapor ◽  
Metal Organic

Correlation between Dislocation Density and the Macroscopic Properties of GaN Grown by Metalorganic Vapor Phase Epitaxy

1999 ◽  
Vol 38 (Part 2, No. 10B) ◽  
pp. L1159-L1162 ◽  
Author(s):  
Atsushi Watanabe ◽  
Hirokazu Takahashi ◽  
Toshiyuki Tanaka ◽  
Hiroyuki Ota ◽  
Kiyofumi Chikuma ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Macroscopic Properties

Effect of Phase Purity on Dislocation Density of Pressurized-Reactor Metalorganic Vapor Phase Epitaxy Grown InN

2012 ◽  
Vol 51 (4S) ◽  
pp. 04DH02 ◽  
Author(s):  
Takuya Iwabuchi ◽  
Yuhuai Liu ◽  
Takeshi Kimura ◽  
Yuantao Zhang ◽  
Kiattiwut Prasertsuk ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Phase Purity

Strained‐layer superlattices for reduction of dislocation density in GaAs1−xPxon GaAs by organometallic vapor‐phase epitaxy

1989 ◽  
Vol 65 (6) ◽  
pp. 2451-2456 ◽  
Author(s):  
D. S. Cao ◽  
C. H. Chen ◽  
K. L. Fry ◽  
E. H. Reihlen ◽  
G. B. Stringfellow
Keyword(s):  
Dislocation Density ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
Strained Layer ◽  
Strained Layer Superlattices
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