Effect of Phase Purity on Dislocation Density of Pressurized-Reactor Metalorganic Vapor Phase Epitaxy Grown InN

2012 ◽  
Vol 51 (4S) ◽  
pp. 04DH02 ◽  
Author(s):  
Takuya Iwabuchi ◽  
Yuhuai Liu ◽  
Takeshi Kimura ◽  
Yuantao Zhang ◽  
Kiattiwut Prasertsuk ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Phase Purity

Effect of Phase Purity on Dislocation Density of Pressurized-Reactor Metalorganic Vapor Phase Epitaxy Grown InN

2012 ◽  
Vol 51 ◽  
pp. 04DH02 ◽  
Author(s):  
Takuya Iwabuchi ◽  
Yuhuai Liu ◽  
Takeshi Kimura ◽  
Yuantao Zhang ◽  
Kiattiwut Prasertsuk ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Phase Purity

Fabrication of GaN layer with Low Dislocation Density using Facet controlled ELO technique

2000 ◽  
Vol 639 ◽  
Author(s):  
H. Miyake ◽  
H. Mizutani ◽  
K. Hiramatsu ◽  
Y. Iyechika ◽  
Y. Honda ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Epitaxial Lateral Overgrowth ◽  
Lateral Overgrowth ◽  
Low Dislocation Density ◽  
Window Region

ABSTRACTGaN layers with low dislocation density have been fabricated be means of facet-controlled epitaxial lateral overgrowth (FACELO) via low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). The distribution of the dislocations in FACELO GaN was inspected by observation of InGaN growth pits. For FACELO with {11-20} facets as the first step, the dislocations concentrate only in the window region. For FACELO with {11-22} facets as the first step, the dislocations exist only in the coalescence region. The double FACELO, which was FACELO with {11-20} on FACELO with {11-22}, was demonstrated and dislocation density of less than 105 cm−2 was achieved.

Correlation between Dislocation Density and the Macroscopic Properties of GaN Grown by Metalorganic Vapor Phase Epitaxy

1999 ◽  
Vol 38 (Part 2, No. 10B) ◽  
pp. L1159-L1162 ◽  
Author(s):  
Atsushi Watanabe ◽  
Hirokazu Takahashi ◽  
Toshiyuki Tanaka ◽  
Hiroyuki Ota ◽  
Kiyofumi Chikuma ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Macroscopic Properties

High Resolution X-ray Diffraction and X-ray Topography Study of Gan on A12O3

1998 ◽  
Vol 512 ◽  
Author(s):  
J. Chaudhuri ◽  
M. Hooe Ng ◽  
D. D. Koleske ◽  
A. E. Wickenden ◽  
R. L. Henry
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Dislocation Density ◽  
Carrier Concentration ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
Reduced Pressure ◽  
X Ray

ABSTRACTHigh resolution x-ray diffraction and x-ray topography study of GaN thin films, grown on sapphire (00.1) substrate by reduced pressure metalorganic vapor phase epitaxy under various conditions, were performed. An attempt was made to correlate the mobility in films with similar carrier concentration with the strain and dislocation density. X-ray topography revealed the defects present in the film.

Correlation between nucleation layer structure, dislocation density, and electrical resistivity for GaN films grown on a-plane sapphire by metalorganic vapor phase epitaxy

2001 ◽  
Vol 79 (26) ◽  
pp. 4322-4324 ◽  
Author(s):  
M. E. Twigg ◽  
D. D. Koleske ◽  
A. E. Wickenden ◽  
R. L. Henry ◽  
S. C. Binari
Keyword(s):  
Electrical Resistivity ◽  
Dislocation Density ◽  
Vapor Phase ◽  
Layer Structure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Nucleation Layer

Density functional theory study on surface adsorptions in AlN metalorganic vapor phase epitaxy process

2021 ◽  
Vol 544 ◽  
pp. 148773
Author(s):  
Peng Lin ◽  
Nannan Niu ◽  
Ran Zuo ◽  
Yulong Fang ◽  
Zhihong Feng
Keyword(s):  
Density Functional Theory ◽  
Vapor Phase ◽  
Density Functional ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Density Functional Theory Study ◽  
Functional Theory

Selective-area growth and characterization of cubic GaN grown by metalorganic vapor phase epitaxy

2020 ◽  
Vol 709 ◽  
pp. 138125
Author(s):  
Pattana Suwanyangyaun ◽  
Sakuntam Sanorpim ◽  
Kentaro Onabe
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth ◽  
Cubic Gan

Acceptor doping of (Al,Ga)As using carbon by metalorganic vapor phase epitaxy

1991 ◽  
Vol 107 (1-4) ◽  
pp. 268-273 ◽  
Author(s):  
M.A. Tischler ◽  
R.M. Potemski ◽  
T.F. Kuech ◽  
F. Cardone ◽  
M.S. Goorsky ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Acceptor Doping
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