Progress of high crystalline quality AlN grown on sapphire for high-efficiency deep ultraviolet light emitting diodes

Author(s):  
Fujun Xu ◽  
Bo Shen
Crystals ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 420 ◽  
Author(s):  
Yung-Min Pai ◽  
Chih-Hao Lin ◽  
Chun-Fu Lee ◽  
Chun-Peng Lin ◽  
Cheng-Huan Chen ◽  
...  

To realize high-efficiency AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs), enhancing their light-extraction efficiency (LEE) is crucial. This paper proposes an aluminum-based sidewall reflector structure that could replace the conventional ceramic-based packaging method. We design optimization simulations and experimental results demonstrated the light power output could be enhanced 18.38% of DUV-LEDs packaged with the aluminum-based sidewall.


2004 ◽  
Vol 84 (23) ◽  
pp. 4762-4764 ◽  
Author(s):  
V. Adivarahan ◽  
S. Wu ◽  
J. P. Zhang ◽  
A. Chitnis ◽  
M. Shatalov ◽  
...  

CrystEngComm ◽  
2019 ◽  
Vol 21 (31) ◽  
pp. 4632-4636 ◽  
Author(s):  
M. X. Wang ◽  
F. J. Xu ◽  
J. M. Wang ◽  
N. Xie ◽  
Y. H. Sun ◽  
...  

Evolution of crystalline quality of AlN via high-temperature (HT) annealing induced by different sapphire pretreatments is investigated.


2015 ◽  
Author(s):  
Zetian Mi ◽  
Songrui Zhao ◽  
Ashfiqua Connie ◽  
Mohammad Hadi Tavakoli Dastjerdi

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