Model of HfO2/Al2O3 Dielectric ALNINNAlganmos HEMT for Power Application

The work involves to devise dielectric HfO2 /Al2O3MOS-HEMT stack to validate for the device structure through the refinement of mesh analysis. The structure of the AlN\InN\AlGaN HEMT MOS-HEMTs are designed and meshed using the script file in the Sentaurus structure editor. TheAlN\InN\AlGaN MOS-HEMTs output characteristic are examined for physics of MOS-HEMT in Hydrodynamic model TCAD. The amalgamation formation ofthe Al0.30GaN0.70 barrierinterface with the channelofhigh 2DEG density result in anincreaseddrain current density and high trans conductance. Additional the device performance of DC transfer characteristics, small signal analysis of AlN/InN/AlGaNMOS-HEMT are analyzed and simulated.