2006 International Conference on Simulation of Semiconductor Processes and Devices

2006 ◽

Author(s):

Jinyu Zhang ◽

Yoshio Ashizawa ◽

Hideki Oka ◽

Chioko Kaneta ◽

Takahiro Yamazaki

Keyword(s):

Ab Initio ◽

Ab Initio Study ◽

Pile Up

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Small-Signal Analysis and Modeling of Asymmetric Source/Drain Parasitic Resistances for DRAM Access Transistors in Low-Power Applications

2006 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2006.282856 ◽

2006 ◽

Cited By ~ 1

Author(s):

Young Kim ◽

Matthew Ulrich ◽

Praveen Vaidyanathan ◽

Venkat Ananthan ◽

Chandra Mouli ◽

...

Keyword(s):

Low Power ◽

Signal Analysis ◽

Small Signal ◽

Small Signal Analysis

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Electron Transport at Technologically Significant Stepped 4H-SiC/SiO2 Interfaces

2006 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2006.282879 ◽

2006 ◽

Cited By ~ 1

Author(s):

G. Pennington ◽

S. Potbhare ◽

J. McGarrity ◽

N. Goldsman ◽

A. Lelis ◽

...

Keyword(s):

Electron Transport

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Modeling of Discrete Dopant Effects on Threshold Voltage Shift by Random Telegraph Signal

2006 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2006.282851 ◽

2006 ◽

Author(s):

Ken'ichiro Sonoda ◽

Kiyoshi Ishikawa ◽

Takahisa Eimori ◽

Osamu Tsuchiya

Keyword(s):

Threshold Voltage ◽

Threshold Voltage Shift ◽

Voltage Shift ◽

Random Telegraph Signal

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A tool development of rigorous Schr�ger/Luttinger based Monte Carlo codes for scaled MOS studies in terms of crystal orientation, channel direction, mechanical stress and applied voltage

2006 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2006.282838 ◽

2006 ◽

Author(s):

Takako Okada

Keyword(s):

Monte Carlo ◽

Mechanical Stress ◽

Applied Voltage ◽

Crystal Orientation ◽

Tool Development

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3D Mesh Generation with Wavelet-Driven Adaptivity

2006 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2006.282874 ◽

2006 ◽

Cited By ~ 1

Author(s):

Luca Marchi ◽

Emanuele Baravelli ◽

Francesco Franze ◽

Nicolo Speciale

Keyword(s):

Mesh Generation ◽

3D Mesh

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A compact model for Phase Change Memories

2006 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2006.282863 ◽

2006 ◽

Cited By ~ 12

Author(s):

P. Fantini ◽

A. Benvenuti ◽

A. Pirovano ◽

F. Pellizzer ◽

D. Ventrice ◽

...

Keyword(s):

Phase Change ◽

Compact Model

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Investigation of SNM with Random Dopant Fluctuations for FD SGSOI and FinFET 6T SOI SRAM Cell by Three-dimensional Device Simulation

2006 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2006.282848 ◽

2006 ◽

Cited By ~ 5

Author(s):

R. Tanabe ◽

Y. Ashizawa ◽

H. Oka

Keyword(s):

Three Dimensional ◽

Device Simulation ◽

Sram Cell ◽

Random Dopant Fluctuations ◽

Random Dopant

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Carbon Nanoribbons: An Alternative to Carbon Nanotubes

2006 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2006.282830 ◽

2006 ◽

Cited By ~ 3

Author(s):

Borna Obradovic ◽

Roza Kotlyar ◽

Frederik Heinz ◽

Philippe Matagne ◽

Titash Rakshit ◽

...

Keyword(s):

Carbon Nanotubes

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Modeling of stress-dependent wet etch characteristic for P-SOG STI process

2006 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2006.282885 ◽

2006 ◽

Author(s):

Jeong-guk Min ◽

Sang-ho Rha ◽

Tai-kyung Kim ◽

Ui-hui Kwon ◽

Ju-seon Goo ◽

...

Keyword(s):

Stress Dependent ◽

Wet Etch

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2006 International Conference on Simulation of Semiconductor Processes and Devices
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Ab initio Study of Boron Pile-up at the Si(001)/SiO2 Interface

Small-Signal Analysis and Modeling of Asymmetric Source/Drain Parasitic Resistances for DRAM Access Transistors in Low-Power Applications

Electron Transport at Technologically Significant Stepped 4H-SiC/SiO2 Interfaces

Modeling of Discrete Dopant Effects on Threshold Voltage Shift by Random Telegraph Signal

A tool development of rigorous Schr�ger/Luttinger based Monte Carlo codes for scaled MOS studies in terms of crystal orientation, channel direction, mechanical stress and applied voltage

3D Mesh Generation with Wavelet-Driven Adaptivity

A compact model for Phase Change Memories

Investigation of SNM with Random Dopant Fluctuations for FD SGSOI and FinFET 6T SOI SRAM Cell by Three-dimensional Device Simulation

Carbon Nanoribbons: An Alternative to Carbon Nanotubes

Modeling of stress-dependent wet etch characteristic for P-SOG STI process

Export Citation Format

2006 International Conference on Simulation of Semiconductor Processes and DevicesLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Ab initio Study of Boron Pile-up at the Si(001)/SiO2 Interface

Small-Signal Analysis and Modeling of Asymmetric Source/Drain Parasitic Resistances for DRAM Access Transistors in Low-Power Applications

Electron Transport at Technologically Significant Stepped 4H-SiC/SiO2 Interfaces

Modeling of Discrete Dopant Effects on Threshold Voltage Shift by Random Telegraph Signal

A tool development of rigorous Schr�ger/Luttinger based Monte Carlo codes for scaled MOS studies in terms of crystal orientation, channel direction, mechanical stress and applied voltage

3D Mesh Generation with Wavelet-Driven Adaptivity

A compact model for Phase Change Memories

Investigation of SNM with Random Dopant Fluctuations for FD SGSOI and FinFET 6T SOI SRAM Cell by Three-dimensional Device Simulation

Carbon Nanoribbons: An Alternative to Carbon Nanotubes

Modeling of stress-dependent wet etch characteristic for P-SOG STI process

2006 International Conference on Simulation of Semiconductor Processes and Devices
Latest Publications